Patents by Inventor Stephen James Kilpatrick

Stephen James Kilpatrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Voltage tunable oscillator using bilayer graphene and a lead zirconate titanate capacitor
    Patent number: 9252704
    Abstract: A voltage controlled oscillator comprising a substrate and a bilayer graphene transistor formed on the substrate. The transistor has two signal terminals and a gate terminal positioned in between the signal terminals. A voltage controlled PZT or MEMS capacitor is also formed on the substrate. The capacitor is electrically connected to the transistor gate terminal. At least one component is connected to the transistor and capacitor to form a resonant circuit.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: February 2, 2016
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Osama M. Nayfeh, Stephen James Kilpatrick, James Wilson, Madam Dubey, Ronald G. Polcawich
  • Voltage tunable oscillator using bilayer graphene and a lead zirconate titanate capacitor
    Publication number: 20120293271
    Abstract: A voltage controlled oscillator comprising a substrate and a bilayer graphene transistor formed on the substrate. The transistor has two signal terminals and a gate terminal positioned in between the signal terminals. A voltage controlled PZT or MEMS capacitor is also formed on the substrate. The capacitor is electrically connected to the transistor gate terminal. At least one component is connected to the transistor and capacitor to form a resonant circuit.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 22, 2012
    Inventors: Osama M. Nayfeh, Stephen James Kilpatrick, James Wilson, Madam Dubey, Ronald G. Polcawich
  • Ball limiting metallurgy, interconnection structure including the same, and method of forming an interconnection structure
    Patent number: 7273803
    Abstract: A ball-limiting metallurgy includes a substrate, a barrier layer formed over the substrate, an adhesion layer formed over the barrier layer, a first solderable layer formed over the adhesion layer, a diffusion barrier layer formed over the adhesion layer, and a second solderable layer formed over the diffusion barrier layer.
    Type: Grant
    Filed: December 1, 2003
    Date of Patent: September 25, 2007
    Assignee: International Business Machines Corporation
    Inventors: Yu-Ting Cheng, Stefanie Ruth Chiras, Donald W. Henderson, Sung-Kwon Kang, Stephen James Kilpatrick, Henry A. Nye, III, Carlos J. Sambucetti, Da-Yuan Shih