Patents by Inventor Stephen Jew
Stephen Jew has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11806835Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.Type: GrantFiled: March 22, 2021Date of Patent: November 7, 2023Assignee: Applied Materials, Inc.Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Patent number: 11787008Abstract: A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.Type: GrantFiled: December 18, 2020Date of Patent: October 17, 2023Assignee: Applied Materials, Inc.Inventors: Xingfeng Wang, Jianshe Tang, Feng Q. Liu, David M. Gage, Stephen Jew
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Publication number: 20220402096Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.Type: ApplicationFiled: August 26, 2022Publication date: December 22, 2022Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Publication number: 20220193859Abstract: A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.Type: ApplicationFiled: December 18, 2020Publication date: June 23, 2022Inventors: Xingfeng WANG, Jianshe TANG, Feng Q. LIU, David M. GAGE, Stephen JEW
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Publication number: 20210331288Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. The first barrier includes a solid first body having a first flat bottom surface and having a first leading surface configured to contact the used polishing liquid.Type: ApplicationFiled: July 8, 2021Publication date: October 28, 2021Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Patent number: 11077536Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. The first barrier includes a solid first body having a first flat bottom surface and having a first leading surface configured to contact the used polishing liquid.Type: GrantFiled: June 19, 2017Date of Patent: August 3, 2021Assignee: Applied Materials, Inc.Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Publication number: 20210205953Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.Type: ApplicationFiled: March 22, 2021Publication date: July 8, 2021Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Patent number: 10967483Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.Type: GrantFiled: June 19, 2017Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Patent number: 10589397Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.Type: GrantFiled: February 3, 2017Date of Patent: March 17, 2020Assignee: Applied Materials, Inc.Inventors: Alain Duboust, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang, Stephen Jew, David H. Mai, Huyen Tran
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Publication number: 20170368664Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. The first barrier includes a solid first body having a first flat bottom surface and having a first leading surface configured to contact the used polishing liquid.Type: ApplicationFiled: June 19, 2017Publication date: December 28, 2017Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Publication number: 20170368663Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.Type: ApplicationFiled: June 19, 2017Publication date: December 28, 2017Inventors: Yen-Chu Yang, Stephen Jew, Jianshe Tang, Haosheng Wu, Shou-Sung Chang, Paul D. Butterfield, Alexander John Fisher, Bum Jick Kim
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Publication number: 20170151647Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.Type: ApplicationFiled: February 3, 2017Publication date: June 1, 2017Applicant: Applied Materials, Inc.Inventors: Alain Duboust, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang, Stephen Jew, David H. Mai, Huyen Tran
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Patent number: 9005999Abstract: Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.Type: GrantFiled: June 30, 2012Date of Patent: April 14, 2015Assignee: Applied Materials, Inc.Inventors: Kun Xu, Jimin Zhang, David H. Mai, Stephen Jew, Shih-Haur Walters Shen, Zhihong Wang, Thomas H. Osterheld, Wen-Chiang Tu, Gary Ka Ho Lam, Tomohiko Kitajima
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Publication number: 20140222188Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.Type: ApplicationFiled: April 7, 2014Publication date: August 7, 2014Applicant: Applied Materials, Inc.Inventors: Alain Duboust, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang, Stephen Jew, David H. Mai, Huyen Tran
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Patent number: 8694144Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.Type: GrantFiled: August 30, 2010Date of Patent: April 8, 2014Assignee: Applied Materials, Inc.Inventors: Alain Duboust, Stephen Jew, David H. Mai, Huyen Tran, Wen-Chiang Tu, Shih-Haur Shen, Jimin Zhang, Ingemar Carlsson, Boguslaw A. Swedek, Zhihong Wang
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Publication number: 20140030956Abstract: A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.Type: ApplicationFiled: July 25, 2012Publication date: January 30, 2014Inventors: Jimin Zhang, Jose Salas-Vernis, Ingemar Carlsson, David H. Mai, Huyen Tran, Zhihong Wang, Wen-Chiang Tu, Stephen Jew, Boguslaw A. Swedek, Shih-Haur Shen, James C. Wang, Yen-Chu Yang
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Publication number: 20140024293Abstract: A polishing method includes simultaneously polishing a first substrate and a second substrate on the same polishing pad, storing a default overpolishing time, determining first and second polishing endpoint times of the first and substrates with the in-situ monitoring system, determining a difference between the first and second polishing endpoint times, and determining whether the difference exceeds a threshold. If the difference is less than the threshold, then an overpolishing stop time is calculated and polishing of the first substrate and the second substrates is halted simultaneously at the overpolishing stop time. If the difference is greater than the threshold, then first and second overpolishing stop times that equal the first and second endpoint times plus the default overpolishing time are calculated, and polishing of the first and second substrates is halted at the first and second overpolishing stop times, respectively.Type: ApplicationFiled: July 19, 2012Publication date: January 23, 2014Inventors: Jimin Zhang, Zhihong Wang, David H. Mai, Ingemar Carlsson, Stephen Jew, Boguslaw A. Swedek
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Publication number: 20140004626Abstract: Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.Type: ApplicationFiled: June 30, 2012Publication date: January 2, 2014Applicant: Applied Materials, Inc.Inventors: KUN XU, Jimin Zhang, David H. Mai, Stephen Jew, Shih-Haur Walters Shen, Zhihong Wang, Thomas H. Osterheld, Wen-Chiang Tu, Gary Ka Ho Lam, Tomohiko Kitajima
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Patent number: 8616935Abstract: A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.Type: GrantFiled: June 2, 2010Date of Patent: December 31, 2013Assignee: Applied Materials, Inc.Inventors: Jimin Zhang, Ingemar Carlsson, Stephen Jew, Boguslaw A Swedek
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Patent number: 8295967Abstract: A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.Type: GrantFiled: November 7, 2008Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Jimin Zhang, Thomas H. Osterheld, Ingemar Carlsson, Boguslaw A. Swedek, Stephen Jew