Abstract: A method for fabricating a semiconductor structure includes forming a masking pattern on an ONO layer, wherein the ONO layer is on a semiconductor substrate, forming pocket regions in the substrate with the masking pattern as a doping mask, etching the ONO layer with the masking pattern as an etching mask forming residual oxide regions, etching the ONO layer with a buffered oxide etch or a plasma etch exposing regions of the substrate, and removing the mask and forming a bit-line oxide layer on the exposed regions.

Abstract: A process for fabricating a memory cell in a two-bit EEPROM device, the process includes forming an ONO layer overlying a semiconductor substrate, depositing a resist mask overlying the ONO layer, patterning the resist mask, implanting the semiconductor substrate with an n-type dopant, wherein the resist mask is used as an ion implant mask, and performing a resist flow operation on the semiconductor substrate after implanting the semiconductor substrate with an n-type dopant. In one preferred embodiment, the resist flow operation on the semiconductor substrate includes baking the semiconductor substrate in an oven at about 100° C. to about 300° C. for about 5 minutes to about 30 minutes to thin down the resist mask and cause the edges of the resist mask to become rounded.

Abstract: A process for fabricating a memory cell in a two-bit EEPROM device including forming an ONO layer overlying a semiconductor substrate, depositing a hard mask overlying the ONO layer, and patterning the hard mask. The hard mask is preferably made from polysilicon or silicon. The process further includes doping the semiconductor substrate with boron causing p-type regions to form in the semiconductor substrate, and doping the semiconductor substrate with n-type dopants, such as arsenic, causing n-type regions to form in the semiconductor substrate. The exposed ONO layer is then etched to expose part of the semiconductor substrate, and a bit-line oxide region is formed overlying the semiconductor substrate. The hard mask is then removed, preferably using a plasma etch process.

Abstract: A process for fabricating a memory cell in a two-bit EEPROM device, includes forming an ONO layer overlying a semiconductor substrate, depositing a resist mask overlying the ONO layer, patterning the resist mask, implanting the semiconductor substrate with a p-type dopant, wherein the resist mask is used as an ion implant mask, and annealing the semiconductor substrate before implanting the semiconductor substrate with an n-type dopant. In one preferred embodiment, the annealing of the semiconductor substrate laterally diffuses the p-type dopants to form pocket regions on either side of the EEPROM device.

Abstract: Embodiments of the invention comprise a new device and technique to realize an improved integrated circuit device that comprises an improved polysilicon upper surface. This improvement is achieved by approximately planarizing an upper surface of the polysilicon layer. First, the polysilicon layer is preferably formed as a relatively thicker layer as compared to the layer thickness in a conventional device. Then, a portion of the polysilicon layer is removed, preferably utilizing a chemical mechanical polish technique. Thus, this embodiment achieves a relatively planarized upper surface of the polysilicon layer. Then, for example, a conventional metal or silicide layer may be formed upon the relatively planarized polysilicon layer. This approximately planarized upper surface of the polysilicon layer allows for a silicide layer to be formed with a relative reduction in the amount and/or severity of the conventional word line voids and seams.

Abstract: A process for fabricating a memory cell in a two-bit EEPROM device including forming an ONO layer overlying a semiconductor substrate, depositing a hard mask overlying the ONO layer, and patterning the hard mask. The hard mask is made from tungsten, titanium, or titanium nitride. The process further includes doping the semiconductor substrate with boron causing p-type regions to form in the semiconductor substrate, and doping the semiconductor substrate with n-type dopants, such as arsenic, causing n-type regions to form in the semiconductor substrate. The exposed ONO layer is then etched to expose part of the semiconductor substrate, and a bit-line oxide region is formed overlying the semiconductor substrate. The hard mask is then stripped, preferably using an H2O2 solution.

Abstract: A ferrule is provided which comprises an inner wall defining a conduit extending between an inlet opening and an outlet opening; a first taper lock surface is defined by a first region of the inner wall for forming a taper lock with a first connector portion having first dimensions; and a second taper lock surface is defined by a second region of the inner wall for forming a taper lock with a second connector portion having second dimensions.

Abstract: A ferrule for use as a medical device which maker mechanical connection with external connector tubes provided; the ferrule comprises an inner wall defining a conduit extending between an inlet opening and an outlet opening; a first taper lock surface is defined by a first region of the inner wall for forming a taper lock with a first connector portion having first dimensions; and a second taper lock surface is defined by a second region of the inner wall for forming a taper lock with a second connector portion having second dimensions.

Abstract: A ferrule for use as a medical device which makes mechanical connection with external connector tubes is provided; the ferrule comprises an inner wall defining a conduit extending between an inlet opening and an outlet opening; a first taper lock surface is defined by a first region of the inner wall for forming a taper lock with a first connector portion having first dimensions; and a second taper lock surface is defined by a second region of the inner wall for forming a taper lock with a second connector portion having second dimensions.

Abstract: A gastrostomy feeding tube including a main, flexible cylindrical body with a proximal end adapted for receiving conventional medical apparatus and a distal end having a locking mechanism. A locking ring is slidably and frictionally attached to the main body of the tube. The locking mechanism includes hinged legs and a membrane surrounding the mechanism, which is attached in a sealed fashion to the tube and to a distal end of the locking mechanism. Other embodiments of the locking mechanism include teeth or detents. Locking knobs are provided within the distal end. A long, rigid insertion tool having grooves for receiving the locking knobs is utilized, and is inserted through a bore through the tube until the locking knobs pass into the grooves. A needle is inserted in a conventional fashion into a patient's stomach, and a guide wire is passed therethrough, and the needle is then removed.

Abstract: A device is disclosed for supplying food and medication to a patient, the device being inserted through a stoma and into the patient's stomach. The device is secured within the stomach by an inflatable balloon, and on the abdominal wall by an adjustable ring which also prevents ingestion of the device into the stomach. During use, the adjustable ring can be retracted to permit cleaning of the stoma area. The device can be employed with conventional surgically formed procedures, and is replacable at considerably longer intervals than present devices. Servicing of the device can be made at home, rather than at a hospital.

Abstract: A device is disclosed for supplying food and medication to a patient, the device being inserted through a stoma and into the patient's stomach.The device is secured within the stomach by an inflatable balloon, and on the abdominal wall by an adjustable ring which also prevents ingestion of the device into the stomach. During use, the adjustable ring can be retracted to permit cleaning of the stoma area.The device can be employed with conventional surgically formed procedures, and is replaceable at considerably longer intervals than present devices. Servicing of the device can be made at home, rather than at a hospital.

Abstract: A device is disclosed for supplying food and medication to a patient, the device being inserted through a stoma and into the patient's stomach for feeding into the stomach and/or the jejunum. The device may also be used to feed directly into the jejunum by by-passing the stomach.The device is secured in place by an inflatable balloon within the stomach, or by a plate if the stomach is by-passed, and by an adjustable ring on the abdominal wall. The adjustable ring also prevents ingestion of the device into the stomach. During use, the ring can be retracted to permit cleaning of the stoma area. The ring can be perforated and ribbed to provide improved ventilation of the stoma area during use.The device can be employed with conventional surgically formed procedures, and is replaceable. Servicing of the device can be made at home, rather than at a hospital.

Abstract: A device is disclosed for supplying food and medication to a patient, and for drainage and/or decompression, the device being inserted through a stoma and into the patient's stomach.The device is secured in place by an inflatable balloon or a mushroom tip within the stomach, and by an adjustable ring on the abdominal wall. The adjustable ring also prevents ingestion of the device into the stomach. During use, the ring can be retracted to permit cleaning of the stoma area. The ring can be perforated and ribbed to provide improved ventilation of the stoma area during use.The device can be used with conventional surgically formed procedures, and is replaceable at considerably longer intervals than present devices. Servicing of the device can be made at home, rather than at a hospital.