Abstract: Various embodiments of the present invention provide systems and methods for determining contact with a storage medium. As an example, a data storage system is disclosed that includes: a head assembly and a data processing circuit. The head includes a head disk interface sensor operable to provide a contact signal indicating contact between the head and a storage medium disposed in relation to the head. The data processing circuit is operable to process the contact signal to yield an indication of a contact between the storage medium and the head.

Abstract: Various embodiments of the present invention provide systems and methods for determining contact with a storage medium. As an example, a data storage system is disclosed that includes: a head assembly and a data processing circuit. The head includes a head disk interface sensor operable to provide a contact signal indicating contact between the head and a storage medium disposed in relation to the head. The data processing circuit is operable to process the contact signal to yield an indication of a contact between the storage medium and the head.

Abstract: An integrated circuit having an n-channel MOSFET device and a JFET device. The integrated circuit includes a semiconductor layer having an upper surface, an MOS transistor device formed in a doped well of a first conductivity type extending from the semiconductor upper surface and a JFET device. The JFET device includes a channel region in the semiconductor layer spaced from, and having a peak concentration positioned a predetermined distance below, the upper surface. An associated method of manufacturing includes introducing p-type dopant into the semiconductor surface to form a p-well in which the NMOS device is formed and a source and a drain of the JFET device. N-type dopant is introduced into the semiconductor surface to form an n-type region of the NMOS device below the p-well and a gate region of the JFET device.

Abstract: A demagnetizer for an inductive load having a driver circuit including at least one transistor and a ramp-down voltage source switchably connected to the driver circuit, so that when the ramp-down voltage source is connected to the transistor, it drives the voltage of the transistor below its threshold voltage.

Abstract: Use of a depletion mode MOSFET to protect differential terminals of a disk drive read head transducer from an electrostatic discharge event, wherein MOSFET source and drain terminals are connected to the differential terminals. The MOSFET is normally “on” such that a conductive path is provided between the differential signal terminals during assembly of the transducer into a disk drive data storage system and during periods when the transducer is inoperative. The conductive path, limits the differential voltage between the terminals that is generated by a current pulse of an ESD event. The MOSFET is gated off during operation of the disk drive to permit a differential read signal, representing the read data bits, to be developed between the differential terminals.