Patents by Inventor Stephen L. Willis

Stephen L. Willis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7045454
    Abstract: A process of removing excess conductive material from the exposed surface of a dielectric layer, the process comprising the steps of forming a shield layer on the dielectric layer, forming a sacrificial layer on top of the shield layer, depositing the conductive material on top of the sacrificial layer so that the conductive material is positioned within cavities in the dielectric material, and then using chemical mechanical planarization to remove the excess conductive material and the sacrificial layer. The use of a sacrificial layer interposed between the shield layer and the excess conductive material allows for chemical mechanical planarization to fully remove the sacrificial layer to facilitate more uniform removal of excess conductive material.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: May 16, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Stephen L. Willis
  • Patent number: 6576553
    Abstract: A process of removing excess conductive material from the exposed surface of a dielectric layer, the process comprising the steps of forming a shield layer on the dielectric layer, forming a sacrificial layer on top of the shield layer, depositing the conductive material on top of the sacrificial layer so that the conductive material is positioned within cavities in the dielectric material, and then using chemical mechanical planarization to remove the excess conductive material and the sacrificial layer. The use of a sacrificial layer interposed between the shield layer and the excess conductive material allows for chemical mechanical planarization to fully remove the sacrificial layer to facilitate more uniform removal of excess conductive material.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: June 10, 2003
    Assignee: Micron Technology, Inc.
    Inventor: Stephen L. Willis
  • Publication number: 20020053712
    Abstract: A process of removing excess conductive material from the exposed surface of a dielectric layer, the process comprising the steps of forming a shield layer on the dielectric layer, forming a sacrificial layer on top of the shield layer, depositing the conductive material on top of the sacrificial layer so that the conductive material is positioned within cavities in the dielectric material, and then using chemical mechanical planarization to remove the excess conductive material and the sacrificial layer. The use of a sacrificial layer interposed between the shield layer and the excess conductive material allows for chemical mechanical planarization to fully remove the sacrificial layer to facilitate more uniform removal of excess conductive material.
    Type: Application
    Filed: November 13, 2001
    Publication date: May 9, 2002
    Inventor: Stephen L. Willis
  • Publication number: 20020042201
    Abstract: A process of removing excess conductive material from the exposed surface of a dielectric layer, the process comprising the steps of forming a shield layer on the dielectric layer, forming a sacrificial layer on top of the shield layer, depositing the conductive material on top of the sacrificial layer so that the conductive material is positioned within cavities in the dielectric material, and then using chemical mechanical planarization to remove the excess conductive material and the sacrificial layer. The use of a sacrificial layer interposed between the shield layer and the excess conductive material allows for chemical mechanical planarization to fully remove the sacrificial layer to facilitate more uniform removal of excess conductive material.
    Type: Application
    Filed: November 13, 2001
    Publication date: April 11, 2002
    Inventor: Stephen L. Willis