Abstract: An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are separated by spacings, and a plurality of gas nozzles connected to a source of gas and positioned within the chamber so that the flow of gas therefrom is directed, respectively, into the spacings between the surfaces. A method of utilizing this apparatus comprises rotating the substrates while moving the nozzles back and forth in an arc, so that the flow of gas therefrom is directed into the spacings at different angles. Uniform deposition of the material onto the substrates is further improved by maintaining the pressure of the gas within the chamber between about 1 and 100 Torr.

Abstract: An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are separated by spacings, and a plurality of gas nozzles connected to a source of gas and positioned within the chamber so that the flow of gas therefrom is directed, respectively, into the spacings between the surfaces. A method of utilizing this apparatus comprises rotating the substrates while moving the nozzles back and forth in an arc, so that the flow of gas therefrom is directed into the spacings at different angles.