Patents by Inventor Stephen M. Lucarini
Stephen M. Lucarini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10290637Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.Type: GrantFiled: October 17, 2014Date of Patent: May 14, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Felix Beaudoin, Stephen M. Lucarini, Xinhui Wang, Xinlin Wang
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Patent number: 9385131Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.Type: GrantFiled: May 31, 2012Date of Patent: July 5, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Felix Beaudoin, Stephen M. Lucarini, Xinhui Wang, Xinlin Wang
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Publication number: 20150037947Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.Type: ApplicationFiled: October 17, 2014Publication date: February 5, 2015Inventors: Felix Beaudoin, Stephen M. Lucarini, Xinhui Wang, Xinlin Wang
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Publication number: 20130320423Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.Type: ApplicationFiled: May 31, 2012Publication date: December 5, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Felix Beaudoin, Stephen M. Lucarini, Xinhui Wang, Xinlin Wang
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Publication number: 20080227247Abstract: The present invention provides a semiconducting device including a gate dielectric atop a semiconducting substrate, the semiconducting substrate containing source and drain regions adjacent the gate dielectric; a gate conductor atop the gate dielectric; a conformal dielectric passivation stack positioned on at least the gate conductor sidewalls, the conformal dielectric passivation stack comprising a plurality of conformal dielectric layers, wherein no electrical path extends entirely through the stack; and a contact to the source and drain regions, wherein the discontinuous seam through the conformal dielectric passivation stack substantially eliminates shorting between the contact and the gate conductor. The present invention also provides a method for forming the above-described semiconducting device.Type: ApplicationFiled: May 29, 2008Publication date: September 18, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Brett H. Engel, Stephen M. Lucarini, John D. Sylvestri, Yun-Yu Wang
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Patent number: 7397073Abstract: The present invention provides a semiconducting device including a gate dielectric atop a semiconducting substrate, the semiconducting substrate containing source and drain regions adjacent the gate dielectric; a gate conductor atop the gate dielectric; a conformal dielectric passivation stack positioned on at least the gate conductor sidewalls, the conformal dielectric passivation stack comprising a plurality of conformal dielectric layers, wherein no electrical path extends entirely through the stack; and a contact to the source and drain regions, wherein the discontinuous seam through the conformal dielectric passivation stack substantially eliminates shorting between the contact and the gate conductor. The present invention also provides a method for forming the above-described semiconducting device.Type: GrantFiled: November 22, 2004Date of Patent: July 8, 2008Assignee: International Business Machines CorporationInventors: Brett H. Engel, Stephen M. Lucarini, John D. Sylvestri, Yun-Yu Wang
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Patent number: 7101817Abstract: A apparatus and method for determining minimum line widths of free standing structures built by a semiconductor (S/C) manufacturing process. Free standing structures are created in a semiconductor device and subjected to an aerosol process which is tuned and centered with respect to a critical line width for the free standing structures. The S/C manufacturing process is tuned responsive to failure of free standing structures of sub-critical line widths.Type: GrantFiled: November 5, 2004Date of Patent: September 5, 2006Assignee: International Business Machines CorporationInventors: Stephen M. Lucarini, Karl W. Barth, Stephen K. Loh
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Publication number: 20040194813Abstract: A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.Type: ApplicationFiled: May 17, 2004Publication date: October 7, 2004Inventors: David B. Riggs, Rajarao Jammy, John Kim, Stephen M. Lucarini, George L. Mack, Christopher Parks
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Patent number: 6764551Abstract: A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.Type: GrantFiled: October 5, 2001Date of Patent: July 20, 2004Assignee: International Business Machines CorporationInventors: David B. Riggs, Rajarao Jammy, John Kim, Stephen M. Lucarini, George L. Mack, Christopher Parks
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Publication number: 20030066542Abstract: A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.Type: ApplicationFiled: October 5, 2001Publication date: April 10, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David B. Riggs, Rajarao Jammy, John Kim, Stephen M. Lucarini, George L. Mack, Christopher Parks