Patents by Inventor Stephen M. Rusinko

Stephen M. Rusinko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DRAM having improved leakage performance and method for making same
    Patent number: 6818534
    Abstract: A semiconductor memory device comprises a trench etched from a substrate below a shallow trench isolation and a doped collar oxide. The device further comprises a buried-strap junction formed adjacent to the shallow trench isolation and above the collar oxide, and a channel stop formed below the buried-strap junction, wherein a junction between the channel stop and the buried-strap junction is formed in the substrate.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: November 16, 2004
    Assignee: Infineon Technologies Richmond, LP
    Inventors: Jonathan Philip Davis, Stephen M. Rusinko, Jr.
  • DRAM having improved leakage performance and method for making same
    Publication number: 20040031992
    Abstract: A semiconductor memory device comprises a trench etched from a substrate below a shallow trench isolation and a doped collar oxide. The device further comprises a buried-strap junction formed adjacent to the shallow trench isolation and above the collar oxide, and a channel stop formed below the buried-strap junction, wherein a junction between the channel stop and the buried-strap junction is formed in the substrate.
    Type: Application
    Filed: August 19, 2002
    Publication date: February 19, 2004
    Applicant: Infineon Technologies Richmond, LP
    Inventors: Jonathan Philip Davis, Stephen M. Rusinko