Patents by Inventor Stephen MCCONNELL
Stephen MCCONNELL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210042704Abstract: A patient treatment system includes a communications module coupled to a communication network, an agreement signification device for capturing data indicative of a signature of a patient, a sensor for monitoring parameters associated with medical equipment prescribed for treatment of the patient, and a microcontroller coupled with the communications module and the sensor.Type: ApplicationFiled: October 27, 2020Publication date: February 11, 2021Applicant: Rearden AnalyticsInventors: Larry Leighton Holmes, Eric Jason Shiflet, William Stephen McConnell, IV, Auston Guillium DeVille
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Patent number: 10793186Abstract: A computer-implemented method includes: receiving, by a computing device, data identifying steering adjustments made by a driver; determining, by the computing device, an intent of the driver when making the steering adjustments; generating, by the computing device, steering assist instructions based on determining that the intent of the driver is to maintain the vehicle's position within a driving lane; and outputting, by the computing device, the steering assist instructions to counteract the steering adjustments made by the driver and maintain the vehicle's position within the driving lane.Type: GrantFiled: January 11, 2018Date of Patent: October 6, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael Bender, John E. Moore, Jr., Gregory J. Boss, Stephen McConnell
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Publication number: 20190210642Abstract: A computer-implemented method includes: receiving, by a computing device, data identifying steering adjustments made by a driver; determining, by the computing device, an intent of the driver when making the steering adjustments; generating, by the computing device, steering assist instructions based on determining that the intent of the driver is to maintain the vehicle's position within a driving lane; and outputting, by the computing device, the steering assist instructions to counteract the steering adjustments made by the driver and maintain the vehicle's position within the driving lane.Type: ApplicationFiled: January 11, 2018Publication date: July 11, 2019Inventors: Michael BENDER, John E. MOORE, JR., Gregory J. BOSS, Stephen MCCONNELL
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Publication number: 20180261320Abstract: A patient treatment system includes a network server, an agreement signification device, a global positioning system device, and a network-enabled sensor that performs operations including obtaining, using the agreement signification device, global positioning system device, and network-enabled sensor, information that is input into the network server and is associated with at least one of a patient, medical equipment, a physician, and an ancillary provider. The information includes a signature of the patient representing agreement of the patient with data entered by the physician including (1) whether the patient is benefitting from use of the medical equipment, (2) whether the patient needs to continue use of the medical equipment, and (3) hours of operation of the medical equipment. The operations also include coupling the medical equipment to the network-enabled sensor.Type: ApplicationFiled: February 8, 2018Publication date: September 13, 2018Applicant: Rearden AnalyticsInventors: Larry Leighton Holmes, Eric Jason Shiflet, William Stephen McConnell, IV, Auston Guillium DeVille
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Publication number: 20140052466Abstract: A method of complying with rules to reduce fraudulent reimbursement associated with durable medical equipment prescriptions includes obtaining, using a processing device, information associated with at least one of a patient, the durable medical equipment, a physician, and an ancillary provider; and providing, using the processing device, selective access to the information. The access is selectively provided to at least one of the physician, ancillary provider, a payor, and an auditor, whereby the selective access enables compliance with the rules to reduce fraudulent reimbursement associated with the durable medical equipment prescriptions. A corresponding computer-readable medium and system are also disclosed.Type: ApplicationFiled: August 20, 2013Publication date: February 20, 2014Applicant: Rearden AnalyticsInventors: Auston Guillium DeVille, Larry Leighton Holmes, JR., William Stephen McConnell, IV, Jane Elizabeth Wilkinson-Bunch, Eric Jason Shiflet
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Patent number: 8097932Abstract: A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.Type: GrantFiled: February 13, 2009Date of Patent: January 17, 2012Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Stephen McConnell Gates, Deborah A. Neumayer, Alfred Grill
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Patent number: 7811926Abstract: Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.Type: GrantFiled: August 26, 2008Date of Patent: October 12, 2010Assignee: International Business Machines CorporationInventors: Nicholas C. M. Fuller, Stephen McConnell Gates, Timothy J. Dalton
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Publication number: 20090304951Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.Type: ApplicationFiled: August 17, 2009Publication date: December 10, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christos Dimitrios Dimitrakopoulos, Stephen McConnell Gates, Alfred Grill, Michael Wayne Lane, Eric Gerhard Liniger, Xiao Hu Liu, Son Van Nguyen, Deborah Ann Neumayer, Thomas McCarroll Shaw
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Publication number: 20090297823Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation.Type: ApplicationFiled: August 14, 2009Publication date: December 3, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stephen McConnell Gates, Alfred Grill
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Publication number: 20090146265Abstract: A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.Type: ApplicationFiled: February 13, 2009Publication date: June 11, 2009Applicant: International Business Machines CorporationInventors: Son Van Nguyen, Stephen McConnell Gates, Deborah A. Neumayer, Alfred Grill
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Patent number: 7491658Abstract: A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.Type: GrantFiled: October 13, 2004Date of Patent: February 17, 2009Assignee: International Business Machines CorporationInventors: Son Van Nguyen, Stephen McConnell Gates, Deborah A. Neumayer, Alfred Grill
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Publication number: 20080311744Abstract: Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.Type: ApplicationFiled: August 26, 2008Publication date: December 18, 2008Applicant: International Business Machines CorporationInventors: Nicholas C.M. Fuller, Stephen McConnell Gates, Timothy J. Dalton
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Publication number: 20080286494Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.Type: ApplicationFiled: March 7, 2008Publication date: November 20, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christos Dimitrios Dimitrakopoulos, Stephen McConnell Gates, Alfred Grill, Michael Wayne Lane, Eric Gerhard Liniger, Xiao Hu Liu, Son Van Nguyen, Deborah Ann Neumayer, Thomas McCarroll Shaw
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Patent number: 7371461Abstract: Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.Type: GrantFiled: January 13, 2005Date of Patent: May 13, 2008Assignee: International Business Machines CorporationInventors: Nicholas C. M. Fuller, Stephen McConnell Gates, Timothy J. Dalton
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Patent number: 7357977Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.Type: GrantFiled: January 13, 2005Date of Patent: April 15, 2008Assignee: International Business Machines CorporationInventors: Christos Dimitrios Dimitrakopoulos, Stephen McConnell Gates, Alfred Grill, Michael Wayne Lane, Eric Gerhard Liniger, Xiao Hu Liu, Son Van Nguyen, Deborah Ann Neumayer, Thomas McCarroll Shaw
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Patent number: 7288292Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation.Type: GrantFiled: March 18, 2003Date of Patent: October 30, 2007Assignee: International Business Machines CorporationInventors: Stephen McConnell Gates, Alfred Grill
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Patent number: 7256146Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition SivNwCxOyHz, where 0.1?v?0.9, 0?w?0.5, 0.01?x?0.9, 0?y?0.7, 0.01?z?0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1<v<0.8, 0<w<0.8, 0.05<x<0.8, 0<y<0.3, 0.05<z<0.8 for v+w+x+y+z=1 and then converting the polymeric preceramic layer into a ceramic diffusion barrier by thermal methods.Type: GrantFiled: May 13, 2005Date of Patent: August 14, 2007Assignee: International Business Machines CorporationInventors: Stephan A. Cohen, Stephen McConnell Gates, Jeffrey C. Hedrick, Elbert E. Huang, Dirk Pfeiffer
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Patent number: 7252875Abstract: A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion barrier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.Type: GrantFiled: December 16, 2002Date of Patent: August 7, 2007Assignee: International Business Machines CorporationInventors: Stephan A. Cohen, Stephen McConnell Gates, Alfred Grill, Vishnubhai V. Patel
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Patent number: 6958526Abstract: An apparatus and method is described incorporating one or more layers of SiCOH and one or more layers of patterned conductors in an integrated circuit chip. The invention overcomes the problem of capacitance by lowering the k of the delectric and overcomes the problem of breakdown voltage and the leakage curent by tailoring the composition of SiCOH.Type: GrantFiled: January 27, 2004Date of Patent: October 25, 2005Assignee: International Business Machines CorporationInventors: Stephen McConnell Gates, Alfred Grill
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Patent number: 6943451Abstract: Novel semiconductor devices containing a discontinuous cap layer and possessing a relatively low dielectric constant are provide herein. The novel semiconductor devices includes at least a substrate, a first dielectric layer applied on at least a portion of the substrate, a first set of openings formed through the dielectric layer to expose the surface of the substrate so that a conductive material deposited within and filling the openings provides a first set of electrical contact conductive elements and a discontinuous layer of cap material covering at least the top of the conductive elements to provide a first set of discontinuous cap elements. Methods for forming the semiconductor devices are also provided.Type: GrantFiled: July 2, 2001Date of Patent: September 13, 2005Assignee: International Business Machines CorporationInventors: Stanley Joseph Whitehair, Stephen McConnell Gates, Sampath Purushothaman, Satyanarayana V. Nitta, Maurice McGlashan-Powell, Kevin S. Petrarca