Abstract: Disclosed herein are methods and systems for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: Disclosed herein are methods and systems for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: An electrical coupling is provided between chamber parts of electronic device processing equipment (e.g., equipment used for processing semiconductor wafers) to reduce differences in the electrical potential between such parts. The coupling prevents or at least reduces the presence of plasma or excited gases in undesired regions of the process chamber. In illustrated embodiments, the coupling extends from a cover of a vertically movable electrode assembly to the liner of the chamber wall. Although these parts are each respectively coupled to ground, it is believed that differences in the ground path impedances result in these parts having different electrical potentials, and the potential differences can cause plasma or excited gases to be present in undesirable regions of the chamber. These electrical potential differences are suppressed by electrically coupling the parts to thereby prevent or reduce the presence of plasma or excited gases in undesired regions of the chamber.

Abstract: An arrangement for improved thermal and/or electrical coupling between parts disposed in electronic device processing equipment is provided. In an illustrated embodiment, an improved coupling between a chamber liner and a chamber wall is provided which can be utilized in semiconductor processing equipment. The arrangement includes a compressible coupling or gasket which is compressed between a wedge ring and the chamber wall. The chamber liner is coupled to the wedge ring, so that the chamber liner is coupled to the chamber wall by way of the wedge ring and compressible coupling.

Abstract: An arrangement for improved thermal and/or electrical coupling between parts disposed in electronic device processing equipment is provided. In an illustrated embodiment, an improved coupling between a chamber liner and a chamber wall is provided which can be utilized in semiconductor processing equipment. The arrangement includes a compressible coupling or gasket which is compressed between a wedge ring and the chamber wall. The chamber liner is coupled to the wedge ring, so that the chamber liner is coupled to the chamber wall by way of the wedge ring and compressible coupling.

Abstract: An electrical coupling is provided between chamber parts of electronic device processing equipment (e.g., equipment used for processing semiconductor wafers) to reduce differences in the electrical potential between such parts. The coupling prevents or at least reduces the presence of plasma or excited gases in undesired regions of the process chamber. In illustrated embodiments, the coupling extends from a cover of a vertically movable electrode assembly to the liner of the chamber wall. Although these parts are each respectively coupled to ground, it is believed that differences in the ground path impedances result in these parts having different electrical potentials, and the potential differences can cause plasma or excited gases to be present in undesirable regions of the chamber. These electrical potential differences are suppressed by electrically coupling the parts to thereby prevent or reduce the presence of plasma or excited gases in undesired regions of the chamber.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber defining a process space including a support structure for supporting a substrate within the process space. A gas inlet in the chamber introduces a process gas into the chamber and a showerhead positioned within the chamber disperses process gas from the inlet. A supply of electrical energy biases the showerhead to form a plasma with process gas dispersed by the showerhead. First and second electrical insulator elements are positioned between the showerhead and the processing chamber, and are operable to electrically insulate the showerhead from the processing chamber. The first and second electrical insulator elements each have a passage therethrough for passing a process gas from the gas inlet through the insulator element and the respective passages of the insulator elements are laterally spaced from each other.

Abstract: The invention for etching a substrate containing an oxide layer reduces activated oxygen within the plasma and maintains a high soft etch rate in a series of subsequent etches. In one aspect of the invention, a second substrate, in the form of a substrate ring, is utilized in the processing chamber and is etched in conjunction with a first substrate being processed. This substrate ring is formed of a material which, when etched, reacts with activated oxygen to form a stable oxygen-containing compound which may be evacuated from the system. In another aspect of the invention, a first power level for inductively coupling energy to the plasma is determined to establish a bias voltage level at the substrate of approximately 100 Volts. A second, lower power level is then determined for producing a bias voltage level at the substrate not significantly higher than 300 Volts.