Abstract: A multi-wavelength etalon comprises at least two regions with different indices of refraction. The change in refractive index alters the wavelengths of incident light, and thus the number of wavelengths between the reflective surfaces of the etalon, and therefore the etalon's transmission characteristics. By selecting specific indices of refraction, an etalon can be provided which produces peaks and troughs at preselected wavelengths in each region. The transition between two adjacent regions with different indices of refraction can be graded to reduce optical interference which may result from an abrupt transition.

Abstract: A light emitting device, such as semiconductor laser diodes, superluminescent devices, semiconductor amplifiers and polymer-based light emitting devices, is provided with a coating that will increase the thermal conductivity at one or more facets of the device to provide for lowering the facet temperature during device operation to suppress the occurrence of temperature dependent facet degrading mechanisms and the catastrophic optical damage (COD) level of the light emitting device since these facet attributes are directly affected by temperature at the facet. In the preferred embodiment, the coating should have a thermal conductivity that is higher than the material of the light emitting device. The high thermal conductivity coating provides for an efficient transfer of heat away from the beam emission area of the front facet into regions adjacent to, i.e., above or below the active region of the device, such as layers of the device underlying the active region and the device substrate.

Abstract: A semiconductor device is provided with at least two photodetectors and an interposed etalon. Signals from the photodetectors may be compared to generate a control signal. The control signal may be used for wavelength control and/or stabilization and for other purposes. According to a preferred embodiment, the etalon is formed of at least two distributed Bragg reflectors. The etalon provides high discrimination power. In addition, the etalon has a periodic discrimination function that may be matched to the periodic channels of a dense wavelength division multiplexing system. According to one aspect of the invention, electrical current may be applied to selected layers of the device to tune and/or shift the response of the device. If desired, the invention may be incorporated into a waveguide structure, such as an optical fiber. The present invention also relates to a wafer fusion technique for making integrated devices.

Abstract: An improved stepped etalon comprises a transparent body having a stepped surface. The lands of the steps are separated by a non-abrupt or softened transition region. This reduces the diffraction of light caused by the step transitions, thereby reducing the dead spot behind the step transition portions where interference prevents accurate measurements of light transmission from being made. Methods for producing a smoothly stepped etalon and for smoothing the step transitions in an abruptly stepped etalon are also disclosed.

Abstract: An improved stepped etalon comprises a transparent body having a stepped surface. Adjacent step lands are separated from each other by a transition region which includes a curved, waved, or otherwise varied step wall such that the average height of the stepped surface does not change abruptly in the transition region from the height of one land to another, but instead varies gradually according to the particular shape of the step wall. In an alternative embodiment, the step transition is formed using a grey-scale or half-tone patterning in which the average height gradually varies across the transition region. The non-planar transition region reduces the amount of coherent interference caused by the step transition thereby reducing the dead spot behind the step transition portions where interference prevents accurate measurements of light transmission from being made.

Abstract: Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device.

Abstract: An optical gain medium comprising, for example, an optical semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The gain medium may have a linear stripe region or a diverging stripe region that allows the light propagating therein to diverge along at least part of its length, such as a flared or tapered amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels employing differential pumping.

Abstract: A method and apparatus for establishing a telecommunications call connection in response to a phrase uttered by a caller. Data for the caller is stored in a data base shared by a plurality of switching systems. The data comprises a plurality of phoneme strings, each phoneme string corresponding to the phonemes for a phrase uttered by the customer during the training phase and a telephone number corresponding to the utterance. When the caller subsequently uses the service his/her utterance at the time of use is compared to the phoneme strings stored for that customer to establish the best match and thereby identify the telephone number.

Abstract: A coherent light source, such as a laser oscillator and a monolithic MOPA device, and a broad area light amplifying device, all characterized by having a leaky waveguide beam expander coupled thereto for expanding a single mode beam into a wide light beam in a coherent manner. The beam expander comprises an elongated antiguide core of a first refractive index and a radiated-wave receiving region of a higher refractive index to receive lightwaves laterally radiated from the antiguide core. This beam expander can be located at an output end of a single mode laser oscillator to receive and expand the beam, at an input end of a broad area optical power amplifier to allow the amplifier to accept a narrow input beam, or between the laser oscillator and power amplifier in a MOPA device. The beam expander elements can also be located partially or entirely within the resonant optical cavity of a laser oscillator.

Abstract: An optical crossbar switch matrix for use in switching optical signals from a first set of optical fibers to a second set of optical fibers, in any order, which is characterized by having a matrix of rows and columns of diffraction gratings formed in a semiconductor heterostructure. Each grating is independently biased with either a forward or reverse bias voltage to switch the grating between a reflective state and a transmissive state. The gratings are oriented at an angle relative to the rows and columns so that when the Bragg condition for the light received from an optical film is met, a portion of the light is diffracted from the row in which it is propagating into a column toward another optical fiber. The heterostructure may include optical amplifiers to restore the optical signal to its original power level. Beam expanding, collimating and focussing optics may also be integrated into the heterostructure.

Abstract: A semiconductor laser that includes at least one grating reflector with a grating period selected to diffract at a nonperpendicular angle within the plane of the laser waveguide. This allows dispersal of laser light, eliminating filamentary multimode operation of broad area lasers. In one embodiment, the grating reflector couples light between a single transverse mode waveguide portion of the optical cavity and a second, broad area, portion that is not collinear with the single mode waveguide. In another embodiment, the cavity favors a ring mode of oscillation. One or more grating reflectors form part of the feedback mechanism which forms a resonant optical cavity with noncollinear portions. Other reflectors in the feedback mechanism include facet reflectors which can be cleaved or ion milled, or semiconductor material refractive index boundaries. Laser embodiments with two or more grating reflectors can be independently tuned to provide a high rate of amplitude modulation.

Abstract: An arrangement providing voice activated prompt interrupt for a voice messaging system. The exemplary apparatus includes a telephone line interface, a memory device, a processor, a prompting device and a recording device. Once a call is established at the interface, the processor causes the prompt to be played and simultaneously the incoming signal to be sampled. An echo estimate is determined, subtracted from the incoming signal and a determination is made if incoming speech is detected. If incoming speech is detected, the prompt is stopped and the buffered incoming signal is directed to the recording device.

Abstract: A signal analysis system for a magnetic field motor monitor utilizes an analog-to-digital converter for sampling the motor magnetic field at accurately determined and equally spaced times synchronized with the line frequency driving the motor. A plurality of separate memories are provided to accumulate the respective samples which are added to or subtracted from the contents of respective memories, depending on which of the samples is being processed as indicated by control bits in a status register. Signals indicative of the amplitudes of respective harmonically related frequency components of the motor magnetic field are provided from the contents of the memories by combining the respective in phase and quadrature values. A monitor provides an indication of when there has been a change in these combined signals.