Abstract: A method of forming an electroluminescent device comprising the steps of providing a substrate having a top surface coating with a material including an anode having indium-tin-oxide; and forming an amorphous conductive layer over the anode by providing a fluorocarbon gas in a radical source cavity and subjecting such fluorocarbon gas to a reduced pressure in a range of 0.1 to 20 MT; applying an RF field across the fluorocarbon gas in the radical source cavity to form a plasma having CF.sub.x radicals; depositing the CF.sub.x radicals onto the anode forming an amorphous CF.sub.x conductive polymer layer on the anode; and forming a plurality of layers over the amorphous CF.sub.x conductive polymer layer with such layers including at least one organic electroluminescent layer and a cathode over the electroluminescent layer.

Abstract: A method for forming lenslets which collect light and focus the light onto photosensitive elements of an electronic imager. The method includes providing a transparent lenslet-forming layer on a substrate or on layers on the substrate, forming a thin etch-stop layer on the transparent lenslet-forming layer and patterning a thin photosensitive resin mask on the etch-stop layer so that the mask pattern corresponds to lenslets to be formed. The method further includes transferring by etching the pattern of the photosensitive resin mask to the thin etch-stop layer to form a thin etch-stop mask, anisotropically plasma etching the transparent lenslet-forming layer according to the patterned thin etch-stop mask, removing the thin etch-stop mask, and thermally reflowing the etched transparent lenslet-forming layer to form the lenslets.

Abstract: A method for forming lenslets which collect light and focuses it onto photosensitive elements of an electronic imager includes providing a transparent lenslet-forming layer on a substrate or on layers on the substrate and forming a thin etch-stop layer on the transparent lenslet-forming layer and patterning the etch-stop layer so that the mask pattern corresponds to lenslets to be formed, The method further includes anisotropically plasma etching the transparent lenslet-forming layer according to the thin etch-stop mask pattern, removing the thin etch-stop mask, and thermally reflowing the patterned transparent layer to form the transparent lenslets.