Abstract: A computer-implemented method for command-address-control calibration of a memory device includes starting, via a processor, a controller clock for the memory device, releasing, via the processor, a reset on the memory device, running, via the processor, a calibration pattern for calibrating the memory device by placing the memory device in calibration mode, where the calibration pattern is initiated prior to an initialization of the memory device, calibrating, via the processor, the memory device with a calibration setting based on the calibration pattern, and initializing the memory device based on the calibration setting.

Abstract: Embodiments herein describe a memory system that includes a DRAM module with a plurality of individual DRAM chips. In one embodiment, the DRAM chips are per DRAM addressable (PDA) so that each DRAM chip can use a respective reference voltage (VREF) value to decode received data signals (e.g., DQ or CA signals). During runtime, the VREF value can drift away from its optimal value set when the memory system is initialized. To address possible drift in VREF value, the present embodiments perform VREF calibration dynamically. To do so, the memory system monitors a predefined criteria to determine when to perform VREF calibration. To calibrate VREF value, the memory system may write transmit data and then read out the test data to determine the width of a signal eye using different VREF values. The memory system selects the VREF value that results in the widest signal eye.

Abstract: In an example, a method includes monitoring a memory bus for one or more commands sent by a memory controller to a memory device and determining whether the one or more commands have a value indicating an operation mode of the memory device. Information associated with the one or more commands may be assessed based on the operation mode, and the information may be stored to one or more registers of the memory controller. The operation mode may be a per dynamic random access memory (DRAM) addressability (PDA) mode, a per buffer addressability (PBA) mode, or a per rank mode. Accessing the information may include a first set of configuration values in response to the value indicating the PDA mode or the PBA mode, and a second set of configuration values in response to the value indicating the per rank mode.

Abstract: An aspect includes providing communication links from a memory controller to contents of a plurality of bit locations in a plurality of memory devices. A failing bit location in the plurality of bit locations is detected by the memory controller. A replacement bit location for the failing bit location is selected and a replacement communication link to the replacement bit location is provided by the memory controller. A request to access contents of the failing bit location received after the selecting and providing the replacement communication link is performed by accessing contents of the replacement bit location via the replacement communication link.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A temporal calibration mechanism reduces the time and resources for calibration by reducing the number tests needed to sufficiently determine the boundaries of the data eye of the memory device. For one or more values of the voltage reference, the temporal calibration mechanism performs a minimal number of tests to find the edges of the data eye for the hold and setup times.

Abstract: In an example, a system includes a memory controller that includes a plurality of memory components. The system also includes a memory controller configured to receive a plurality of memory settings to be applied to the plurality of memory components. The memory controller is configured to, based on the received memory settings, transmit a first command to the plurality of memory components, the first command causing each memory component of the plurality of memory components to be configured to a first memory setting. The memory controller is configured to, based on the received memory settings, transmit a second command to a subset of the plurality of memory components after transmitting the first command, the second command causing each memory component of the subset to be configured to a second memory setting.

Abstract: A calibration controller tests an electronic circuit to identify an initial read check with a read delay, an initial write check with a write delay, and an initial command, address, control (CAC) check with a CAC delay indicated as passing. Responsive to the initial read check, the initial write check, and the initial CAC check indicated as passing, for each setting of the read delay, the write delay, and the CAC delay, the calibration controller iteratively performs concurrently, a write test with the write delay, a read test with the read delay, and a CAC test with the CAC delay on the electronic circuit over the range of conditions while simultaneously adjusting the write delay, the read delay, and the CAC delay for each iteration until one or more of a read edge, a write edge, and a CAC edge are detected.

Abstract: To calibrate an electronic circuit, a calibration controller tests the electronic circuit with an initial separate read check allowing for a read delay and with an initial separate write check allowing for a write delay. The calibration controller, responsive to passing the initial read check and the initial write check, for each condition of a range of conditions, iteratively performs a write test with the write delay concurrent with a read test with the read delay on the electronic circuit over the range of conditions while simultaneously adjusting the write delay and adjusting the read delay for each iteration until one or more of a read edge and a write edge are detected.

Abstract: An aspect includes providing communication links from a memory controller to contents of a plurality of bit locations in a plurality of memory devices. A failing bit location in the plurality of bit locations is detected by the memory controller. A replacement bit location for the failing bit location is selected and a replacement communication link to the replacement bit location is provided by the memory controller. A request to access contents of the failing bit location received after the selecting and providing the replacement communication link is performed by accessing contents of the replacement bit location via the replacement communication link.

Abstract: Embodiments herein describe a digital simulation environment that changes the delay of a digital signal to represent different analog reference voltages. For example, changing the length of time the digital signal is at the logical one state versus the time the digital signal is at the logical zero state may represent an analog reference voltage that is below or above an optimal value. Put differently, the digital simulation environment can insert unequal delay shifts relative to the logical one and zero states of the digital signal to represent different analog voltages. Using these unequal delay shifts, a digital simulation system can test the simulated operation of logic representing a physical system that uses an analog reference voltage as an input to determine if the logic behaves as expected.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A temporal calibration mechanism reduces the time and resources for calibration by reducing the number tests needed to sufficiently determine the boundaries of the data eye of the memory device. For one or more values of the voltage reference, the temporal calibration mechanism performs a minimal number of tests to find the edges of the data eye for the hold and setup times.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A temporal calibration mechanism reduces the time and resources for calibration by reducing the number tests needed to sufficiently determine the boundaries of the data eye of the memory device. For one or more values of the voltage reference, the temporal calibration mechanism performs a minimal number of tests to find the edges of the data eye for the hold and setup times.

Abstract: A computer-implemented method for command-address-control calibration of a memory device includes starting, via a processor, a controller clock for the memory device, releasing, via the processor, a reset on the memory device, running, via the processor, a calibration pattern for calibrating the memory device by placing the memory device in calibration mode, where the calibration pattern is initiated prior to an initialization of the memory device, calibrating, via the processor, the memory device with a calibration setting based on the calibration pattern, and initializing the memory device based on the calibration setting.

Abstract: Keys are generated at a memory device with a period of time elapsing between generation of each key. A request is received from a memory controller for the most recently generated key. The memory device communicates the first key to the memory controller. Access to nonvolatile memory on the memory device is locked. An unlock command with a second key is received from the memory controller. The memory device determines that the second key matches the first key and unlocks access to the nonvolatile memory in response.

Abstract: A method, system and memory controller are provided for implementing signal integrity fail recovery and mainline calibration for Dynamic Random Access Memory (DRAM). After identifying a failed DRAM, the DRAM is marked as bad and taken out of mainline operation. Characterization tests and periodic calibrations are run to evaluate optimal settings and to determine if the marked DRAM is recoverable. If recoverable, the marked DRAM chip is redeployed. If unrecoverable, error reporting is provided to the user.

Abstract: Keys are generated at a memory device with a period of time elapsing between generation of each key. A request is received from a memory controller for the most recently generated key. The memory device communicates the first key to the memory controller. Access to nonvolatile memory on the memory device is locked. An unlock command with a second key is received from the memory controller. The memory device determines that the second key matches the first key and unlocks access to the nonvolatile memory in response.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A reference voltage (Vref) calibration mechanism reduces the time and resources for calibration by reducing the number of tests needed to sufficiently determine the boundaries of the data eye of the memory device by using a combination of small steps and small steps to find a preferred reference voltage. In one example, the Vref calibration mechanism uses small steps of the reference voltage in a first range above a nominal reference voltage to find a maximum eye width then uses small steps to more precisely find the maximum eye width. If a maximum reference voltage is found in the first range then the second range below the nominal reference voltage does not need to be tested thereby saving additional time and resources.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A reference voltage (Vref) calibration mechanism reduces the time and resources for calibration by reducing the number of tests needed to sufficiently determine the boundaries of the data eye of the memory device by using a combination of small steps and small steps to find a preferred reference voltage. In one example, the Vref calibration mechanism uses small steps of the reference voltage in a first range above a nominal reference voltage to find a maximum eye width then uses small steps to more precisely find the maximum eye width. If a maximum reference voltage is found in the first range then the second range below the nominal reference voltage does not need to be tested thereby saving additional time and resources.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A temporal calibration mechanism reduces the time and resources for calibration by reducing the number tests needed to sufficiently determine the boundaries of the data eye of the memory device. For one or more values of the voltage reference, the temporal calibration mechanism performs a minimal number of tests to find the edges of the data eye for the hold and setup times.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A temporal calibration mechanism reduces the time and resources for calibration by reducing the number tests needed to sufficiently determine the boundaries of the data eye of the memory device. For one or more values of the voltage reference, the temporal calibration mechanism performs a minimal number of tests to find the edges of the data eye for the hold and setup times.