Abstract: A read/write arrangement is described for use in accessing at least one nonvolatile memory device in read/write operations with the memory device being made up of a plurality of memory cells which memory cells are organized as a set of pages that are physically and sequentially addressable with each page having a page length such that a page boundary is defined between successive ones of the pages in the set. The read/write arrangement includes a control arrangement that is configured to store and access a group of data blocks that is associated with a given write operation in a successive series of pages of the memory such that at least an initial page in the series is filled and each block includes a block length that is different than the page length.

Abstract: A memory system digitally communicates with a host device to provide data storage capacity for the host device. The memory system includes a plurality of modules, each module including a nonvolatile memory section. In one feature, at least a particular one of the modules is configured to independently maintain a module portion of a distributed flash translation layer for the nonvolatile memory section of only that particular module based on one or more module input parameters. In another feature, a particular module defines an independent execution of at least one of a wear leveling function, a garbage collection function and a bit density function. Associated methods are described.

Abstract: A method and system for storing and retrieving data using flash memory devices. One example system includes an apparatus within a flash memory configuration. The flash memory configuration includes a plurality of memory cells, where each memory cell has a charge storage capacity for use in implementing digital storage. The apparatus includes a processing arrangement configured to access each of the memory cells in a write operation and a read operation. The apparatus also includes an instruction set for instructing the processor to impose target charge levels for defining a plurality of data values for each of the memory cells. The target charge levels are programmably movable with respect to the charge storage capacity.

Abstract: Subject matter disclosed herein relates to error protection of data stored in and/or read from a memory device.

Abstract: In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. A quality monitor establishes a relationship between a current value of the quality metric and a threshold value and monitors the relationship as being indicative of a degradation of the quality of the retrieved data, and selectively initiates an error response. In another embodiment, a correction value is iterated through a set of values as a quality metric is monitored such that the value of the quality metric which most closely approaches the value of the quality metric immediately subsequent to an initial writing of the data can be selected.

Abstract: Subject matter disclosed herein relates to error protection of data stored in and/or read from a memory device.

Abstract: A method and system for storing and retrieving data using flash memory devices. One example system includes an apparatus within a flash memory configuration. The flash memory configuration includes a plurality of memory cells, where each memory cell has a charge storage capacity for use in implementing digital storage. The apparatus includes a processing arrangement configured to access each of the memory cells in a write operation and a read operation. The apparatus also includes an instruction set for instructing the processor to impose target charge levels for defining a plurality of data values for each of the memory cells. The target charge levels are programmably movable with respect to the charge storage capacity.

Abstract: A read/write arrangement is described for use in accessing at least one nonvolatile memory device in read/write operations with the memory device being made up of a plurality of memory cells which memory cells are organized as a set of pages that are physically and sequentially addressable with each page having a page length such that a page boundary is defined between successive ones of the pages in the set. The read/write arrangement includes a control arrangement that is configured to store and access a group of data blocks that is associated with a given write operation in a successive series of pages of the memory such that at least an initial page in the series is filled and each block includes a block length that is different than the page length.

Abstract: A system uses multi-level encoding where each symbol of a plurality of symbols represents more than one bit of information in a user data symbol stream for transfer using a multilevel transmission channel. The user data symbols are represented in a digital bitwise form such that each symbol is presented as a plurality of bits and each bit is subject to a different probability of error. An error correction procedure is applied based on the different error probability that is associated with each bit in the plurality. The channel can be configured to support a mosaic tile structure, each tile containing a channel symbol such that a selected tile has a collective error probability that is different from other tiles. Customized coding can be applied to the tile structure to allocate a selected amount of error correction power to the selected tile based on an overall available correction power.

Abstract: A digital system, components and method are configured with nonvolatile memory for storing digital data using codewords. The data is stored in the memory using multiple bits per memory cell of the memory. A code efficiency, for purposes of write operations and read operations relating to the memory, can be changed on a codeword to codeword basis based on input parameters. The code efficiency can change based on changing any one of the input parameters including bit density that is stored by the memory. Storing and reading fractional bit densities is described.

Abstract: A method and system for storing and retrieving data using flash memory devices. One example system includes an apparatus within a flash memory configuration. The flash memory configuration includes a plurality of memory cells, where each memory cell has a charge storage capacity for use in implementing digital storage. The apparatus includes a processing arrangement configured to access each of the memory cells in a write operation and a read operation. The apparatus also includes an instruction set for instructing the processor to impose target charge levels for defining a plurality of data values for each of the memory cells. The target charge levels are programmably movable with respect to the charge storage capacity.

Abstract: A read/write arrangement is described for use in accessing at least one nonvolatile memory device in read/write operations with the memory device being made up of a plurality of memory cells which memory cells are organized as a set of pages that are physically and sequentially addressable with each page having a page length such that a page boundary is defined between successive ones of the pages in the set. The read/write arrangement includes a control arrangement that is configured to store and access a group of data blocks that is associated with a given write operation in a successive series of pages of the memory such that at least an initial page in the series is filled and each block includes a block length that is different than the page length.

Abstract: A system uses multi-level encoding where each symbol of a plurality of symbols represents more than one bit of information in a user data symbol stream for transfer using a multilevel transmission channel. The user data symbols are represented in a digital bitwise form such that each symbol is presented as a plurality of bits and each bit is subject to a different probability of error. An error correction procedure is applied based on the different error probability that is associated with each bit in the plurality. The channel can be configured to support a mosaic tile structure, each tile containing a channel symbol such that a selected tile has a collective error probability that is different from other tiles. Customized coding can be applied to the tile structure to allocate a selected amount of error correction power to the selected tile based on an overall available correction power.

Abstract: A digital system, components and method are configured with nonvolatile memory for storing digital data using codewords. The data is stored in the memory using multiple bits per memory cell of the memory. A code efficiency, for purposes of write operations and read operations relating to the memory, can be changed on a codeword to codeword basis based on input parameters. The code efficiency can change based on changing any one of the input parameters including bit density that is stored by the memory. Storing and reading fractional bit densities can be performed.

Abstract: A memory system for digital data communication with a host device is described to provide data storage capacity. The system can include a controller and a plurality of modules, each module including a nonvolatile memory device wherein the module is configured to perform a management function with respect to the module at least partially based on a parameter. The parameter is provided by the controller and/or the module. The system and modules, in one feature, can support multiple forms of concurrency with respect to data accesses involving the modules.

Abstract: In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. A quality monitor establishes a relationship between a current value of the quality metric and a threshold value and monitors the relationship as being indicative of a degradation of the quality of the retrieved data, and selectively initiates an error response. In another embodiment, a correction value is iterated through a set of values as a quality metric is monitored such that the value of the quality metric which most closely approaches the value of the quality metric immediately subsequent to an initial writing of the data can be selected.

Abstract: Subject matter disclosed herein relates to error protection of data stored in and/or read from a memory device.

Abstract: In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. A quality monitor establishes a relationship between a current value of the quality metric and a threshold value and monitors the relationship as being indicative of a degradation of the quality of the retrieved data, and selectively initiates an error response. In another embodiment, a correction value is iterated through a set of values as a quality metric is monitored such that the value of the quality metric which most closely approaches the value of the quality metric immediately subsequent to an initial writing of the data can be selected.

Abstract: A method and system for storing and retrieving data using flash memory devices. One example system includes an apparatus within a flash memory configuration. The flash memory configuration includes a plurality of memory cells, where each memory cell has a charge storage capacity for use in implementing digital storage. The apparatus includes a processing arrangement configured to access each of the memory cells in a write operation and a read operation. The apparatus also includes an instruction set for instructing the processor to impose target charge levels for defining a plurality of data values for each of the memory cells. The target charge levels are programmably movable with respect to the charge storage capacity.

Abstract: A memory system for digital data communication with a host device is described to provide data storage capacity. The system can include a controller and a plurality of modules, each module including a nonvolatile memory device wherein the module is configured to perform a management function with respect to the module at least partially based on a parameter. The parameter is provided by the controller and/or the module. The system and modules, in one feature, can support multiple forms of concurrency with respect to data accesses involving the modules.