Patents by Inventor Stephen P. WALCH

Stephen P. WALCH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICES INCLUDING ELECTRICALLY ISOLATED PATTERNS AND METHOD OF FABRICATING THE SAME
    Publication number: 20180033724
    Abstract: A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.
    Type: Application
    Filed: July 27, 2016
    Publication date: February 1, 2018
    Inventors: Kl-HYUN KIM, FRIEDRICH B. PRINZ, JINSUNG KANG, YOUNGDONG LEE, JOHN PROVINE, PETER SCHINDLER, STEPHEN P. WALCH, YONGMIN KIM, HYO JIN KIM
  • Semiconductor devices including electrically isolated patterns and method of fabricating the same
    Patent number: 9881865
    Abstract: A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: January 30, 2018
    Assignees: Samsung Electronics Co., Ltd., The Board of Trustees of the Leland Stanford Junior University
    Inventors: Ki-Hyun Kim, Friedrich B. Prinz, Jinsung Kang, Youngdong Lee, John Provine, Peter Schindler, Stephen P. Walch, Yongmin Kim, Hyo Jin Kim
  • Method of forming thin film of semiconductor device
    Patent number: 9564286
    Abstract: Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: February 7, 2017
    Assignees: Samsung Electronics Co., Ltd., The Board of Trustees of the Leland Stanford Junior University
    Inventors: Sam Hyung Sam Kim, Andrei Teodor Iancu, Friedrich B. Prinz, Michael C. Langston, Peter Schindler, Ki-Hyun Kim, Stephen P. Walch, Takane Usui
  • METHOD OF FORMING THIN FILM OF SEMICONDUCTOR DEVICE
    Publication number: 20160049291
    Abstract: Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.
    Type: Application
    Filed: August 14, 2014
    Publication date: February 18, 2016
    Applicant: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Sam Hyung Sam KIM, Andrei Teodor IANCU, Friedrich B. PRINZ, Michael C. LANGSTON, Peter SCHINDLER, Ki-Hyun KIM, Stephen P. WALCH, Takane USUI