Patents by Inventor Stephen R. Burgess
Stephen R. Burgess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11875980Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: GrantFiled: December 31, 2020Date of Patent: January 16, 2024Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Eduardo Paulo Lima, Clive L Widdicks, Paul Rich, Scott Haymore, Daniel Cook
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Patent number: 11127568Abstract: A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.Type: GrantFiled: May 21, 2019Date of Patent: September 21, 2021Assignee: SPTS Technologies LimitedInventors: Stephen R. Burgess, Anthony Paul Wilby
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Publication number: 20210123130Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: ApplicationFiled: December 31, 2020Publication date: April 29, 2021Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Eduardo Paulo Lima, Clive L Widdicks, Paul Rich, Scott Haymore, Daniel Cook
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Patent number: 10900114Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: GrantFiled: March 30, 2016Date of Patent: January 26, 2021Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Eduardo Paulo Lima, Clive L Widdicks, Paul Rich, Scott Haymore, Daniel Cook
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Patent number: 10622193Abstract: A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.Type: GrantFiled: November 24, 2015Date of Patent: April 14, 2020Assignee: SPTS Technologies LimitedInventors: Stephen R Burgess, Anthony Paul Wilby
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Patent number: 10601388Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.Type: GrantFiled: October 5, 2016Date of Patent: March 24, 2020Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Scott Haymore, Constanine Fragos
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Publication number: 20190272980Abstract: A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.Type: ApplicationFiled: May 21, 2019Publication date: September 5, 2019Inventors: STEPHEN R. BURGESS, ANTHONY PAUL WILBY
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Patent number: 10153135Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.Type: GrantFiled: June 23, 2016Date of Patent: December 11, 2018Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Anthony Paul Wilby, Stephen R Burgess, Ian Moncrieff, Paul Densley, Clive L Widdicks, Paul Rich, Adrian Thomas
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Patent number: 10096468Abstract: A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O2 or with O2 introduced into the process at a flow rate of 250 sccm or less.Type: GrantFiled: December 19, 2016Date of Patent: October 9, 2018Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Kathrine Crook, Stephen R Burgess, Andrew Price
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Patent number: 9803272Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.Type: GrantFiled: November 4, 2014Date of Patent: October 31, 2017Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Yun Zhou, Rhonda Hyndman, Stephen R Burgess
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Patent number: 9783886Abstract: A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.Type: GrantFiled: March 9, 2016Date of Patent: October 10, 2017Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Daniel T Archard, Stephen R Burgess, Mark I Carruthers, Andrew Price, Keith E Buchanan, Katherine Crook
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Patent number: 9728432Abstract: A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10?4 Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.Type: GrantFiled: November 24, 2015Date of Patent: August 8, 2017Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Stephen R Burgess, Anthony Paul Wilby
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Patent number: 9719166Abstract: Methods and related apparatus support a work piece during a physical vapor deposition. An aluminium support having a support surface coated with a heat absorbent coating is provided. The support is cooled to around 100° C. and a PVD process is performed such that, with cooling, the work piece temperature is between 350° C. and 450° C. The coating is inert and/or ultra-high voltage compatible.Type: GrantFiled: June 20, 2012Date of Patent: August 1, 2017Assignee: SPTS TECHNOLOGIES LIMITEDInventor: Stephen R Burgess
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Publication number: 20170178901Abstract: A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O2 or with O2 introduced into the process at a flow rate of 250 sccm or less.Type: ApplicationFiled: December 19, 2016Publication date: June 22, 2017Inventors: KATHRINE CROOK, STEPHEN R. BURGESS, ANDREW PRICE
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Publication number: 20170104465Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.Type: ApplicationFiled: October 5, 2016Publication date: April 13, 2017Inventors: STEPHEN R. BURGESS, RHONDA HYNDMAN, AMIT RASTOGI, SCOTT HAYMORE, CONSTANINE FRAGOS
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Publication number: 20160379807Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.Type: ApplicationFiled: June 23, 2016Publication date: December 29, 2016Inventors: ANTHONY PAUL WILBY, STEPHEN R. BURGESS, IAN MONCRIEFF, PAUL DENSLEY, CLIVE L. WIDDICKS, PAUL RICH, ADRIAN THOMAS
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Patent number: 9472610Abstract: A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers comprise compressive layers which are subject to a compressive stress, and tensile layers which are subject to a tensile stress; and there are at least two spaced apart tensile layers which are each adjacent to one or more compressive layers.Type: GrantFiled: June 8, 2015Date of Patent: October 18, 2016Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Katherine Crook, Stephen R Burgess
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Publication number: 20160289815Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.Type: ApplicationFiled: March 30, 2016Publication date: October 6, 2016Inventors: STEPHEN R. BURGESS, RHONDA HYNDMAN, AMIT RASTOGI, EDUARDO PAULO LIMA, CLIVE L. WIDDICKS, PAUL RICH, SCOTT HAYMORE, DANIEL COOK
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Publication number: 20160265108Abstract: A plasma-enhanced chemical vapour deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.Type: ApplicationFiled: March 9, 2016Publication date: September 15, 2016Inventors: DANIEL T. ARCHARD, STEPHEN R. BURGESS, MARK I. CARRUTHERS, ANDREW PRICE, KEITH E. BUCHANAN, KATHERINE CROOK
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Publication number: 20160240351Abstract: A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.Type: ApplicationFiled: February 5, 2016Publication date: August 18, 2016Inventors: STEPHEN R. BURGESS, ANTHONY PAUL WILBY, CLIVE L. WIDDICKS, IAN MONCRIEFF, P. DENSLEY