Patents by Inventor Stephen R. Fox
Stephen R. Fox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240121874Abstract: A linear lighting device may include an elongated housing that defines a cavity. The linear lighting device may include plurality of emitter printed circuit boards configured to be received within the cavity. Each of the plurality of emitter printed circuit boards may include a plurality of emitter modules mounted thereto. Each of the plurality of emitter printed circuit boards may include a control circuit configured to control the plurality of emitter modules mounted to the respective emitter printed circuit board based on receipt of one or more messages. The linear lighting device may include a total internal reflection lens for each of the plurality of emitter printed circuit boards. The total internal reflection lens may be configured to diffuse light emitted by the emitter modules of the plurality of emitter printed circuit boards.Type: ApplicationFiled: December 19, 2023Publication date: April 11, 2024Applicant: Lutron Technology Company LLCInventors: Ryan M. Bocock, Fangxu Dong, Ari L. Fox, Christopher M. Green, Peter W. Ogden, JR., Stephen Phillips, Jonathan R. Redus, Jaykrishna A. Shukla
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Patent number: 11917739Abstract: A linear lighting device may include an elongated housing that defines a cavity. The linear lighting device may include plurality of emitter printed circuit boards configured to be received within the cavity. Each of the plurality of emitter printed circuit boards may include a plurality of emitter modules mounted thereto. Each of the plurality of emitter printed circuit boards may include a control circuit configured to control the plurality of emitter modules mounted to the respective emitter printed circuit board based on receipt of one or more messages. The linear lighting device may include a total internal reflection lens for each of the plurality of emitter printed circuit boards. The total internal reflection lens may be configured to diffuse light emitted by the emitter modules of the plurality of emitter printed circuit boards.Type: GrantFiled: December 6, 2022Date of Patent: February 27, 2024Assignee: Lutron Technology Company LLCInventors: Ryan M. Bocock, Fangxu Dong, Ari L. Fox, Christopher M. Green, Peter W. Ogden, Jr., Stephen Phillips, Jonathan R. Redus, Jaykrishna A. Shukla
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Patent number: 6967376Abstract: A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the implanted oxygen ions having a concentration sufficient to form a buried oxide region during a subsequent annealing step; and annealing the substrate containing implanted oxygen ions under conditions wherein the implanted oxygen ions form a buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. Moreover, the annealing conditions employed are capable of reducing the number of tile or divot defects present in the superficial Si-containing layer so as to allow optical detection of any other defect that has a lower density than the tile or divot defect. The present invention also relates to the SOI substrate that is produced using the inventive method.Type: GrantFiled: April 26, 2004Date of Patent: November 22, 2005Assignee: International Business Machines CorporationInventors: Stephen R. Fox, Neena Garg, Kenneth J. Giewont, Junedong Lee, Devendra K. Sadana
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Publication number: 20040197940Abstract: A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the implanted oxygen ions having a concentration sufficient to form a buried oxide region during a subsequent annealing step; and annealing the substrate containing implanted oxygen ions under conditions wherein the implanted oxygen ions form a buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. Moreover, the annealing conditions employed are capable of reducing the number of tile or divot defects present in the superficial Si-containing layer so as to allow optical detection of any other defect that has a lower density than the tile or divot defect. The present invention also relates to the SOI substrate that is produced using the inventive method.Type: ApplicationFiled: April 26, 2004Publication date: October 7, 2004Applicant: INTERNATIOAL BUSINESS MACHINES CORPORATIONInventors: Stephen R. Fox, Neena Garg, Kenneth J. Giewont, Junedong Lee, Devendra K. Sadana
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Publication number: 20020190318Abstract: A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the implanted oxygen ions having a concentration sufficient to form a buried oxide region during a subsequent annealing step; and annealing the substrate containing implanted oxygen ions under conditions wherein the implanted oxygen ions form a buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. Moreover, the annealing conditions employed are capable of reducing the number of tile or divot defects present in the superficial Si-containing layer so as to allow optical detection of any other defect that has a lower density than the tile or divot defect. The present invention also relates to the SOI substrate that is produced using the inventive method.Type: ApplicationFiled: June 19, 2001Publication date: December 19, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stephen R. Fox, Neena Garg, Kenneth J. Giewont, Junedong Lee, Siegfried L. Maurer, Maurice H. Norcott, Devendra K. Sadana
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Patent number: 6495429Abstract: A method to control the quality of a buried oxide region, and to substantially reduce or eliminate deep divots in SOI substrates is provided. Specifically, the inventive method includes the steps of implanting oxygen ions into a surface of a Si-containing substrate; and annealing the Si-containing substrate containing the implanted oxygen ion at a temperature of about 1300° C. or above and in a chlorine-containing ambient so as to form a buried oxide region that electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. The chlorine-containing ambient employed in the annealing step includes oxygen and a chlorine-containing carrier gas such as HCl, methylene chloride, trichloroethylene and trans 1,2-dichloroethane.Type: GrantFiled: January 23, 2002Date of Patent: December 17, 2002Assignee: International Business Machines CorporationInventors: Michael E. Adamcek, Anthony G. Domenicucci, Stephen R. Fox, Neena Garg, Kenneth J. Giewont, Thomas R. Kupiec, Junedong Lee, Devendra K. Sadana