Abstract: A vehicle is provided including an electronic power steering system, an electronic throttle control system, and a stability control system.

Abstract: According to an embodiment of the disclosure, a series or source feedback is provided to a solid-state power amplifier to achieve improved amplifier output power, good impedance match, and low voltage standing wave ratio (VSWR). In an embodiment, an inductive element is coupled to the source of the power amplifier transistor to serve as a series or source feedback for the transistor. In an embodiment, a high-impedance microstrip is provided as an inductive element coupled to the source of the transistor. In an embodiment, a series or source feedback is provided to each amplifier in a multistage amplifier circuit. In an embodiment, a greater series or source feedback is provided at a later stage of a multistage amplifier circuit, whereas a smaller series or source feedback is provided at an earlier stage of the multistage amplifier circuit.

Abstract: According to an embodiment of the disclosure, a series or source feedback is provided to a solid-state power amplifier to achieve improved amplifier output power, good impedance match, and low voltage standing wave ratio (VSWR). In an embodiment, an inductive element is coupled to the source of the power amplifier transistor to serve as a series or source feedback for the transistor. In an embodiment, a high-impedance microstrip is provided as an inductive element coupled to the source of the transistor. In an embodiment, a series or source feedback is provided to each amplifier in a multistage amplifier circuit. In an embodiment, a greater series or source feedback is provided at a later stage of a multistage amplifier circuit, whereas a smaller series or source feedback is provided at an earlier stage of the multistage amplifier circuit.

Abstract: According to an embodiment of the disclosure, a series or source feedback is provided to a solid-state power amplifier to achieve improved amplifier output power, good impedance match, and low voltage standing wave ratio (VSWR). In an embodiment, an inductive element is coupled to the source of the power amplifier transistor to serve as a series or source feedback for the transistor. In an embodiment, a high-impedance transmission line such as a microstrip or coplanar waveguide is provided as an inductive element coupled to the source of the transistor. In an embodiment, a series or source feedback is provided to each amplifier in a multistage amplifier circuit.

Abstract: A FET or BJT structure or distributed transistor amplifier having a tapered gate feed line and a tapered channel width (tapered source fingers, tapered drain fingers) provides increased bandwidth and gain in the microwave/mm-wave frequency spectrum.

Abstract: A wideband distributed or feedback amplifier monolithic microwave integrated circuit (MMIC) is disclosed that contains an integrated group delay equalizer circuit to compensate for the group delay variation of the amplifier circuitry. The MMIC amplifier is capable of achieving a predicted constant group delay with little variation over a wide frequency range. In addition, the group delay equalizer circuit enables the amplifier to achieve flat (constant) gain over a wide bandwidth, while maintaining constant group delay. Furthermore, the group delay equalizer circuitry requires only a small portion of the total MMIC area.

Abstract: A small area cascode FET structure capable of operating at mm-wave frequenices cascades a common-source (CS) FET with a common gate (CG) FET, in a smaller physical area than conventional cascode FET structures. The small area of the cascode FET structure is partially achieved by using small source via grounds, requiring a thin gallium arsenide substrate (typically between 50 and 70 microns thick). The overall cascode area is reduced further, by having the two FETs share a common node. This common node is the output drain manifold of the CS FET, which is also an input source finger of the CG FET. In addition, small via grounds within the MIM capacitors and CS FET, which provide the ground connection to the gate manifolds of the CG FET, further reduce circuit area. Advantageously, the small area cascode FET can be applied to many different MMICs to reduce MMIC area requirements and cost.

Abstract: A wideband distributed or feedback amplifier monolithic microwave integrated circuit (MMIC) is disclosed that contains an integrated group delay equalizer circuit to compensate for the group delay variation of the amplifier circuitry. The MMIC amplifier is capable of achieving a predicted constant group delay with little variation over a wide frequency range. In addition, the group delay equalizer circuit enables the amplifier to achieve flat (constant) gain over a wide bandwidth, while maintaining constant group delay. Furthermore, the group delay equalizer circuitry requires only a small portion of the total MMIC area.

Abstract: A FET or BJT structure or distributed transistor amplifier having a tapered gate feed line and a tapered channel width (tapered source fingers, tapered drain fingers) provides increased bandwidth and gain in the microwave/mm-wave frequency spectrum

Abstract: A small aspect ratio, high power MMIC amplifier is disclosed. The small aspect ratio MMIC amplifier is capable of achieving the same power levels as conventional power amplifier designs, but with an aspect ratio of near 1:1, versus 4:1 of conventional power amplifiers. The small aspect ratio MMIC amplifier layout uses two different types of FETs, with all gate fingers of both types of FETs running in the same direction. One type of FET is a conventional FET, in which the gate stripes run parallel to the direction of the output. In the conventional FET, the gate manifold and the drain manifold both generally extend in the x-direction (parallel to each other). The other type of FET has gate fingers that run perpendicular to the direction of the output. In this other type of FET, the gate manifold generally extends in the x-direction, while the drain manifold generally extends in the y-direction (perpendicular to each other).

Abstract: A small area cascode FET structure capable of operating at mm-wave frequenices cascades a common-source (CS) FET with a common gate (CG) FET, in a smaller physical area than conventional cascode FET structures. The small area of the cascode FET structure is partially achieved by using small source via grounds, requiring a thin gallium arsenide substrate (typically between 50 and 70 microns thick). The overall cascode area is reduced further, by having the two FETs share a common node. This common node is the output drain manifold of the CS FET, which is also an input source finger of the CG FET. In addition, small via grounds within the MIM capacitors and CS FET, which provide the ground connection to the gate manifolds of the CG FET, further reduce circuit area. Advantageously, the small area cascode FET can be applied to many different MMICs to reduce MMIC area requirements and cost.

Abstract: A small aspect ratio, high power MMIC amplifier is disclosed. The small aspect ratio MMIC amplifier is capable of achieving the same power levels as conventional power amplifier designs, but with an aspect ratio of near 1:1, versus 4:1 of conventional power amplifiers. The small aspect ratio MMIC amplifier layout uses two different types of FETs, with all gate fingers of both types of FETs running in the same direction. One type of FET is a conventional FET, in which the gate stripes run parallel to the direction of the output. In the conventional FET, the gate manifold and the drain manifold both generally extend in the x-direction (parallel to each other). The other type of FET has gate fingers that run perpendicular to the direction of the output. In this other type of FET, the gate manifold generally extends in the x-direction, while the drain manifold generally extends in the y-direction (perpendicular to each other).

Abstract: A reduced size field effect transistor is disclosed which has a substrate with a body of semiconductor material having an active region on one surface thereof, and a common conductor located in remote insulated relation to the one surface of the semiconductor body, a pair of source electrodes, a drain electrode and a gate electrode located on the one surface, with the drain electrode having drain fingers located on opposite sides of each of the source electrodes and an air bridge overlying the source electrodes and interconnecting the drain fingers located on opposite sides of each of the source electrodes, the gate electrode having a connection pad at one side thereof and a manifold extending between the source electrodes, and having gate fingers extending between the drain fingers and the source electrodes, and conductive connections between the source electrodes and the common conductor.

Abstract: This is a device package comprising: a leadframe comprising a plurality of leads for effecting circuit connections to the device; and a metal ground piece connected to the leadframe. Other devices and methods are also disclosed.

Abstract: In one form of the invention, a package for integrated circuits and devices (42), (46) is disclosed, the package including: a package base (44), the base having a first top surface; a layer of material (43) on the first top surface of the base (44) wherein the material (43) is patterned to cover a portion of the base, and wherein the layer of material (43) forms a substrate having a second top surface; a microstrip transmission line (45) on the second top surface; and a plastic encapsulant (50), wherein the encapsulant covers the first top surface of the base.

Abstract: This is a package [10] for an rf device [11] operable with a characteristic impedance providing a plurality of terminals [12-19] and [101] for effecting circuit connections to the device, the connection between at least one of the terminals and the device being matched in relation to the characteristic impedance. Other devices and methods are also disclosed.

Abstract: A process for the treatment of refinery oily sludges to produce an oily fraction that is reprocessed in the refinery into (i) salable products and (ii) a solid residue meeting environmental regulatory agency requirements for disposal in non-hazardous solid waste landfills. The process includes mixing the refinery oily sludge with a particulate filter aid and preferably a single solvent selected from refinery intermediate and product streams and contacting this mixture with plate filters in a closed filter vessel. A cake residue forms on the filter plates and a filtrate mixture of oil, water and solvent is produced. The filtrate is separated into an oily fraction and a water fraction. The oily fraction is rerouted to refinery operating units for processing into salable products. The water fraction is routed to a refinery water treatment system. When filter cake residue has built to a predetermined level, charge to the filter vessel is discontinued.

Abstract: This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the PIN diodes are fabricated from GaAs or other III-V compound. This monolithic PIN diode switch offers broader band performance and smaller size. Other methods and devices are disclosed.

Abstract: This is a monolithic PIN diode switch circuit. The switch comprises: input ports, output ports, bias nodes and PIN diodes. Each port or node is connected to receive a bias signal. Preferably the PIN diodes are fabricated from GaAs or other III-V compounds. This monolithic PIN diode switch offers broader band performance and smaller size. Other methods and devices are disclosed.

Abstract: A solvent extraction process for separating a heavy hydrocarbon feedstock material into its various component parts. The process comprises the utilization of pressure reduction to enhance the separation and recovery of a deasphalted oil product comprising substantially the lower molecular weight hydrocarbon components present in the original heavy hydrocarbon feedstock material.