Patents by Inventor Stephen Rhead

Stephen Rhead has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growing epitaxial 3C-SiC on single-crystal silicon
    Patent number: 10907273
    Abstract: A method of growing epitaxial 3C-SiC on single-crystal silicon is disclosed. The method comprises providing a single-crystal silicon substrate in a cold-wall chemical vapour deposition reactor, heating the substrate to a temperature equal to or greater than 700° C. and equal to or less than 1200° C., introducing a gas mixture into the reactor while the substrate is at the temperature, the gas mixture comprising a silicon source precursor, a carbon source precursor and a carrier gas so as to deposit an epitaxial layer of 3C-SiC on the single-crystal silicon.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: February 2, 2021
    Inventors: Maksym Myronov, Gerard Colston, Stephen Rhead
  • GROWING EPITAXIAL 3C-SIC ON SINGLE-CRYSTAL SILICON
    Publication number: 20180209063
    Abstract: A method of growing epitaxial 3-SiC on single-crystal silicon is disclosed. The method comprises providing a single-crystal silicon substrate in a cold-wall chemical vapour deposition reactor, heating the substrate to a temperature equal to or greater than 700° C. and equal to or less than 1200° C., introducing a gas mixture into the reactor while the substrate is at the temperature, the gas mixture comprising a silicon source precursor, a carbon source precursor and a carrier gas so as to deposit an epitaxial layer of 3-SiC on the single-crystal silicon.
    Type: Application
    Filed: July 22, 2016
    Publication date: July 26, 2018
    Inventors: Maksym Myronov, Gerard Colston, Stephen Rhead