Patents by Inventor Stephen Richard Fox

Stephen Richard Fox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control of buried oxide in SIMOX
    Patent number: 7492008
    Abstract: A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.
    Type: Grant
    Filed: July 22, 2004
    Date of Patent: February 17, 2009
    Assignee: International Business Machines Corporation
    Inventors: Stephen Richard Fox, Neena Garg, Kenneth John Giewont, Junedong Lee, Siegfried Lutz Maurer, Dan Moy, Maurice Heathcote Norcott, Devendra Kumar Sadana
  • Control of buried oxide in SIMOX
    Patent number: 6784072
    Abstract: A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.
    Type: Grant
    Filed: July 22, 2002
    Date of Patent: August 31, 2004
    Assignee: International Business Machines Corporation
    Inventors: Stephen Richard Fox, Neena Garg, Kenneth John Giewont, Junedong Lee, Siegfried Lutz Maurer, Dan Moy, Maurice Heathcote Norcott, Devendra Kumar Sadana
  • Control of buried oxide in SIMOX
    Publication number: 20040013886
    Abstract: A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.
    Type: Application
    Filed: July 22, 2002
    Publication date: January 22, 2004
    Applicant: International Business Machines Corporation
    Inventors: Stephen Richard Fox, Neena Garg, Kenneth John Giewont, Junedong Lee, Siegfried Lutz Maurer, Dan Moy, Maurice Heathcote Norcott, Devendra Kumar Sadana