Abstract: This invention relates to a method of depositing an inorganic SiO2 film at temperatures below 250° C. using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O2, or a source thereof, as precursors, with an O2/TEOS ratio of between 15:1 and 25:1.

Abstract: A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01<Si<0.5 at %).

Abstract: A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target surface during intervals between deposition of target material onto a desired substrate, such as a wafer, and ensures that layers or flakes of back-scattered deposited target material do not build up on the target itself. A platen coil is located between the magnetron and the support to increase both uniformity and density of target material arriving nearly normal to the substrate surface.

Abstract: This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a process gas supplied to the chamber through a second gas supply during the supply of the process gas so that a portion of the process gas flows into the first gas supply from the chamber to mitigate against residual reactive gas entering the chamber during the further treatment step.

Abstract: A method of forming a patterned layer on a substrate including depositing a notched or undercut resist pattern to define at least one recess in the photoresist, with the notch or undercut circumjacent the base of the recess, sputtering a material into the recess and removing the resist and the material deposited on the resist characterised in that the aspect ratio of the recess and height of the mouth of the notch or undercut are such that the notch or undercut lies substantially in the shadow beneath the resist, the layer deposited upon it and the layer at the base of the recess in respect of any sputtered particle travelling in a straight line through the mouth of the recess such that material deposited on the walls of the recesses is not continuous with material deposited on the base of the recess.

Abstract: A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/?Ta, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.

Abstract: A method of sputtering a tungsten or tungsten-containing film from a tungsten target onto a semiconductor wafer includes using krypton or xenon as a sputter gas.

Abstract: A magnetron sputtering apparatus has a controller (10a) or selectively releasing the spread of plasma on a substrate (3) on a support (12). The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target surface during intervals between deposition of target material onto a desired substrate, such as a wafer, and ensures that layers or flakes of back-scattered deposited target material do not build up on the target itself. A platen coil is located between the magnetron and the support to increase both uniformity and density of target material arriving nearly normal to the substrate surface.

Abstract: A magnetic assembly (15) is mounted on a lead screw (12) on one side of a spunter target (14). A further lead screw (11) carries a counter weight (16). The lead screws can be rotated by a stepper motor (13) to adjust the lateral positions of assembly (15) and weight (16). The stepper motor and hence the assembly (15), can be rotated about a vertical axis by shaft (17) and motor (18) so that a magnetic field can be swept around the target (14). The position of the assembly (15) is varied in accordance with a process characteristic.

Abstract: In a sputtering apparatus for depositing material onto a workpiece, an RF coil is disposed in a chamber between a first target and a workpiece support. The RF coil includes a re-sputtering surface of electrically conductive non-target material which faces towards the workpiece support and which receives a coating of target material for re-sputtering onto the workpiece. A second target, located between the RF coil and the workpiece support, includes a sputtering surface which faces towards the RF coil and which supplies at least a portion of thc coating of target material to the re-sputtering surface of the RF coil.

Abstract: A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/&bgr;Ta, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.

Abstract: A method of forming a patterned layer on a substrate including depositing a notched or undercut resist pattern to define at least one recess in the photoresist, with the notch or undercut circumjacent the base of the recess, sputtering a material into the recess and removing the resist and the material deposited on the resist characterised in that the aspect ratio of the recess and height of the mouth of the notch or undercut are such that the notch or undercut lies substantially in the shadow beneath the resist, the layer deposited upon it and the layer at the base of the recess in respect of any sputtered particle travelling in a straight line through the mouth of the recess such that material deposited on the walls of the recesses is not continuous with material deposited on the base of the recess.

Abstract: This invention relates to sputtering apparatus for depositing material onto a workpiece.