Patents by Inventor Stephen Rossnagel
Stephen Rossnagel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9651518Abstract: The present invention provides a nano-fluidic field effective device. The device includes a channel having a first side and a second side, a first set of electrodes adjacent to the first side, a second set of electrodes adjacent to the second side, a control unit for applying electric potentials to the electrodes and a fluid within the channel containing a charge molecule. The first set of electrodes is disposed such that application of electric potentials produces a spatially varying electric field that confines a charged molecule within a predetermined area of said channel. The second set of electrodes is disposed such that application of electric potentials relative to the electric potentials applied to the first set of electrodes creates an electric field that confines the charged molecule to an area away from the second side of the channel.Type: GrantFiled: November 17, 2014Date of Patent: May 16, 2017Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Dennis M. Newns, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Gustavo Stolovitzky
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Publication number: 20150068902Abstract: The present invention provides a nano-fluidic field effective device. The device includes a channel having a first side and a second side, a first set of electrodes adjacent to the first side, a second set of electrodes adjacent to the second side, a control unit for applying electric potentials to the electrodes and a fluid within the channel containing a charge molecule. The first set of electrodes is disposed such that application of electric potentials produces a spatially varying electric field that confines a charged molecule within a predetermined area of said channel. The second set of electrodes is disposed such that application of electric potentials relative to the electric potentials applied to the first set of electrodes creates an electric field that confines the charged molecule to an area away from the second side of the channel.Type: ApplicationFiled: November 17, 2014Publication date: March 12, 2015Inventors: Ali Afzali-Ardakani, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Dennis M. Newns, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Gustavo Stolovitzky
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Patent number: 8940148Abstract: The present invention provides a nano-fluidic field effective device. The device includes a channel having a first side and a second side, a first set of electrodes adjacent to the first side, a second set of electrodes adjacent to the second side, a control unit for applying electric potentials to the electrodes and a fluid within the channel containing a charge molecule. The first set of electrodes is disposed such that application of electric potentials produces a spatially varying electric field that confines a charged molecule within a predetermined area of said channel. The second set of electrodes is disposed such that application of electric potentials relative to the electric potentials applied to the first set of electrodes creates an electric field that confines the charged molecule to an area away from the second side of the channel.Type: GrantFiled: June 22, 2010Date of Patent: January 27, 2015Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Dennis M. Newns, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Gustavo Stolovitzky
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Patent number: 8598018Abstract: The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.Type: GrantFiled: June 22, 2010Date of Patent: December 3, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Azdakani, Shafaat Ahmed, Hariklia Deligianni, Dario L. Goldfarb, Stefan Harrer, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Xiaoyan Shao, Gustavo A. Stolovitzky
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Patent number: 8404589Abstract: A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.Type: GrantFiled: April 6, 2010Date of Patent: March 26, 2013Assignees: International Business Machines Corporation, Globalfoundries Inc.Inventors: Andrew J. Kellock, Christian Lavoie, Ahmet Ozcan, Stephen Rossnagel, Bin Yang, Zhen Zhang, Yu Zhu, Stefan Zollner
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Patent number: 8354336Abstract: Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.Type: GrantFiled: June 22, 2010Date of Patent: January 15, 2013Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Shafaat Ahmed, Hariklia Deligianni, Dario L. Goldfarb, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Xiaoyan Shao, Gustavo A. Stolovitzky
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Publication number: 20130009668Abstract: A 4-terminal piezoelectronic transistor (PET) which includes a piezoelectric (PE) material disposed between first and second electrodes; an insulator material disposed on the second electrode; a third electrode disposed on the insulator material and a piezoresistive (PR) material disposed between the third electrode and a fourth electrode. An applied voltage across the first and second electrodes causing a pressure from the PE material to be applied to the PR material through the insulator material, the electrical resistance of the PR material being dependent upon the pressure applied by the PE material. The first and second electrodes are electrically isolated from the third and fourth electrodes. Also disclosed are logic devices fabricated from 4-terminal PETs and a method of fabricating a 4-terminal PET.Type: ApplicationFiled: July 6, 2011Publication date: January 10, 2013Applicant: International Business Machines CorporationInventors: Bruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Stephen Rossnagel, Paul M. Solomon
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Publication number: 20120301706Abstract: A method of depositing a SiNxCy liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD), which includes forming a SiNxCy liner on a surface of a low-k substrate having pores on a surface thereon, in which the low-k substrate is repeatedly exposed to a aminosilane-based precursor and a plasma selected from nitrogen, hydrogen, oxygen, helium, and combinations thereof until a thickness of the liner is obtained, and wherein the liner is prevented from penetrating inside the pores of a surface of the substrate. A porous low thermal conductivity substrate having a SiNxCy liner formed thereon by the method is also disclosed.Type: ApplicationFiled: August 7, 2012Publication date: November 29, 2012Applicant: International Business Machines CorporationInventors: Andrew J. Kellock, Hyungjun Kim, Dae-Gyu Park, Satyanarayana V. Nitta, Sampath Purushothaman, Stephen Rossnagel, Oscar Van Der Straten
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Publication number: 20120132886Abstract: A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.Type: ApplicationFiled: February 3, 2012Publication date: May 31, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Gustavo Alejandro Stolovitzky
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Patent number: 8089157Abstract: A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.Type: GrantFiled: December 14, 2010Date of Patent: January 3, 2012Assignee: International Business Machines CorporationInventors: Cyril Cabral, Jr., Hariklia Deligianni, Randolph F. Knarr, Sandra G. Malhotra, Stephen Rossnagel, Xiaoyan Shao, Anna Topol, Philippe M. Vereecken
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Publication number: 20110308969Abstract: The present invention provides a method of reducing corrosion and water decomposition on a surface of an electrode having a titanium nitride conductive layer disposed on a substrate and estimating extent of reduction thereof. The electrode is immersed into a solution containing a hydroxyl-functional compound. Thereafter, a voltage is applied to the titanium nitride conductive layer of the electrode. The extent of oxidation of the titanium nitride conductive layer is correlated with the extent of formation of oxide of titanium nitride and/or the extent of oxidation of the titanium nitride conductive layer is correlated with the increase of surface roughness. The extent of water decomposition is correlated with formation of hydrogen and oxygen bubbles.Type: ApplicationFiled: June 22, 2010Publication date: December 22, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Azdakani, Shafaat Ahmed, Hariklia Deligianni, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Xiaoyan Shao, Gustavo A. Stolovitzky
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Publication number: 20110312164Abstract: The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.Type: ApplicationFiled: June 22, 2010Publication date: December 22, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Azdakani, Shafaat Ahmed, Hariklia Deligianni, Dario L. Goldfarb, Stefan Harrer, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Xiaoyan Shao, Gustavo A. Stolovitzky
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Publication number: 20110312176Abstract: Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.Type: ApplicationFiled: June 22, 2010Publication date: December 22, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Shafaat Ahmed, Hariklia Deligianni, Dario L. Goldfarb, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Xiaoyan Shao, Gustavo A. Stolovitzky
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Publication number: 20110308949Abstract: The present invention provides a nano-fluidic field effective device. The device includes a channel having a first side and a second side, a first set of electrodes adjacent to the first side, a second set of electrodes adjacent to the second side, a control unit for applying electric potentials to the electrodes and a fluid within the channel containing a charge molecule. The first set of electrodes is disposed such that application of electric potentials produces a spatially varying electric field that confines a charged molecule within a predetermined area of said channel. The second set of electrodes is disposed such that application of electric potentials relative to the electric potentials applied to the first set of electrodes creates an electric field that confines the charged molecule to an area away from the second side of the channel.Type: ApplicationFiled: June 22, 2010Publication date: December 22, 2011Applicant: International Business Machines CorporationInventors: Ali Afzali-Azdakani, Stefan Harrer, Binquan Luan, Glenn J. Martyna, Dennis M. Newns, Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Gustavo Stolovitzky
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Publication number: 20110241213Abstract: A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.Type: ApplicationFiled: April 6, 2010Publication date: October 6, 2011Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBAL FOUNDRIES INC.Inventors: Andrew J. Kellock, Christian Lavoie, Ahmet Ozcan, Stephen Rossnagel, Bin Yang, Zhen Zhang, Yu Zhu, Stefan Zollner
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Publication number: 20110084393Abstract: A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.Type: ApplicationFiled: December 14, 2010Publication date: April 14, 2011Applicant: International Business Machines CorporationInventors: Cyril Cabral, JR., Hariklia Deligianni, Randolph F. Knarr, Sandra G. Malhotra, Stephen Rossnagel, Xiaoyan Shao, Anna Topol, Philippe M. Vereecken
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Publication number: 20100327255Abstract: A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.Type: ApplicationFiled: June 29, 2009Publication date: December 30, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hongbo Peng, Stanislav Polonsky, Stephen Rossnagel, Gustavo Alejandro Stolovitzky
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Patent number: 7851357Abstract: A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric.Type: GrantFiled: May 30, 2008Date of Patent: December 14, 2010Assignee: International Business Machines CorporationInventors: Cyril Cabral, Jr., Lili Deligianni, Randolph F. Knarr, Sandra G. Malhotra, Stephen Rossnagel, Xiaoyan Shao, Anna Topol, Philippe M. Vereecken
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Publication number: 20100055442Abstract: A method of depositing a SiNxCy liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD), which includes forming a SiNxCy liner on a surface of a low-k substrate having pores on a surface thereon, in which the low-k substrate is repeatedly exposed to a aminosilane-based precursor and a plasma selected from nitrogen, hydrogen, oxygen, helium, and combinations thereof until a thickness of the liner is obtained, and wherein the liner is prevented from penetrating inside the pores of a surface of the substrate. A porous low thermal conductivity substrate having a SiNxCy liner formed thereon by the method is also disclosed.Type: ApplicationFiled: September 3, 2008Publication date: March 4, 2010Applicant: International Business Machines CorporationInventors: Andrew J. Kellock, Hyungjun Kim, Dae-Gyu Park, Satyanarayana V. Nitta, Sampath Purushothaman, Stephen Rossnagel, Oscar Van Der Straten
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Publication number: 20090014878Abstract: A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric.Type: ApplicationFiled: May 30, 2008Publication date: January 15, 2009Applicant: International Business Machines CorporationInventors: Cyril Cabral, JR., Hariklia Deligianni, Randolph F. Knarr, Sandra G. Malhotra, Stephen Rossnagel, Xiaoyan Shao, Anna Topol, Philippe M. Vereecken