Abstract: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

Abstract: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

Abstract: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

Abstract: A first set of interferometric measuring beams is used to determine a location of a patterned surface of a reticle and a reticle focus plane for a reticle that is back clamped to a reticle stage. A second set of interferometric measuring beams is used to determine a map of locations of the reticle stage during scanning in a Y direction. The two sets of interferometric measuring beams are correlated to relate the reticle focal plane to the map of the reticle stage. The information is used to control the reticle stage during exposure of a pattern on the patterned surface of the reticle onto a wafer.

Abstract: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

Abstract: A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.

Abstract: A system and method are used to recycle gases in a lithography tool. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. The first and second gases converge between the two chambers, and at least one of the gases is pumped to a storage device. From the storage device, at least one of the two gases is recycled either within the system or remote from the system and possibly reused within the system. A gaslock can couple the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first, second, and/or third gas can be pumped to the storage device and routed to the recycling device. The first, second, and/or third gas can be recycled for reuse to form the emitting light.

Abstract: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

Abstract: A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.

Abstract: A first set of interferometric measuring beams is used to determine a location of a patterned surface of a reticle and a reticle focus plane for a reticle that is back clamped to a reticle stage. A second set of interferometric measuring beams is used to determine a map of locations of the reticle stage during scanning in a Y direction. The two sets of interferometric measuring beams are correlated to relate the reticle focal plane to the map of the reticle stage. The information is used to control the reticle stage during exposure of a pattern on the patterned surface of the reticle onto a wafer.

Abstract: The present invention is directed to a reticle barrier system that prevents contaminants from landing on a mask within lithographic systems using extreme ultra violet light. In particular, a reticle barrier system is provided that consists of a mask barrier and a set of contact barriers. The mask barrier surrounds a mask formed on a reticle, while the contact barriers are affixed between the mask and contact spots on a reticle. The barriers have a height relative to the mask, and different geometries are provided. Collectively, the mask and contact barriers reduce the number of contaminants landing on a mask surface without the use of a pellicle. In an alternate embodiment, the reticle barrier system includes only a mask barrier. Similarly, in another alternate embodiment, the reticle barrier system includes only contact barriers.

Abstract: A first set of interferometric measuring beams is used to determine a location of a patterned surface of a reticle and a reticle focus plane for a reticle that is back clamped to a reticle stage. A second set of interferometric measuring beams is used to determine a map of locations of the reticle stage during scanning in a Y direction. The two sets of interferometric measuring beams are correlated to relate the reticle focal plane to the map of the reticle stage. The information is used to control the reticle stage during exposure of a pattern on the patterned surface of the reticle onto a wafer.

Abstract: A method utilizing a lithography system comprises a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include one or multiple alignment load-locks.

Abstract: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

Abstract: A method, apparatus, and system for controlling a reticle-masking blade in a photolithography system. A reticle-masking blade is supported with a reticle-masking blade carriage assembly. The reticle-masking blade carriage assembly is levitated at a position with respect to a reference frame and at an orientation with respect to the reference frame. Preferably, the reticle-masking blade carriage assembly is electromagnetically levitated. At least one of the position and the orientation of the reticle-masking blade carriage assembly is measured. At least one of the position and the orientation of the reticle-masking blade carriage assembly is controlled. Optionally, the reticle-masking blade carriage assembly is moved within a dimension within a range defined by the reference frame. The dimension can be two dimensions. The movement of the reticle-masking blade carriage assembly can be controlled.

Abstract: A system and method are used to recycle gases in a lithography tool. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. The first and second gases converge between the two chambers, and at least one of the gases is pumped to a storage device. From the storage device, at least one of the two gases is recycled either within the system or remote from the system and possibly reused within the system. A gaslock can couple the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first, second, and/or third gas can be pumped to the storage device and routed to the recycling device. The first, second, and/or third gas can be recycled for reuse to form the emitting light.

Abstract: A lithography system include a lithography patterning chamber, a wafer exchange chamber separated from the lithography patterning chamber by a first gate valve, and at least one alignment load-lock separated from the wafer exchange chamber by a second gate valve. The alignment load-lock includes an alignment stage that aligns a wafer during pump-down. The alignment load-lock can be uni-directional or bi-directional. The lithography system can include more than one alignment load-locks.

Abstract: A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.

Abstract: A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.

Abstract: A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.