Abstract: Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.

Abstract: An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

Abstract: A surface acoustic wave (SAW) resonator device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate comprises a bulk region, and a surface region. The surface region has a high trap density, and a reduced carrier mobility, compared to the bulk region. A piezoelectric layer, having a first surface and a second surface, is disposed over the semiconductor substrate. A plurality of electrodes are disposed over the first surface of the piezoelectric layer, and the plurality of electrodes are configured to generate surface acoustic waves in the piezoelectric layer. The SAW resonator device also comprises a layer disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

Abstract: A surface acoustic wave (SAW) resonator device is disclosed. The SAW resonator has a piezoelectric layer disposed over a semiconductor substrate. The piezoelectric layer has a first surface and a second surface. The polarization axis (C-axis) of the piezoelectric layer is oriented at an angle relative to the second surface of the piezoelectric layer in a range of approximately 0° to approximately 45°. A layer is disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the substrate. A plurality of features provided on a surface of the piezoelectric layer reflects acoustic waves and reduces the incidence of spurious modes in the piezoelectric layer.

Abstract: A multiplexer device includes a single die, at least three acoustic filters and at least one antenna port arranged on the single die, and a shunt inductance connected between each of the at least one antenna port and ground. Each acoustic filter includes one of a transmit or receive filter corresponding to a predetermined radio frequency band. The at least one antenna port is connected to at least one antenna, respectively, where each of the at least one antenna port is further connected to at least one acoustic filter arranged on the single die, and is configured to pass RF signals corresponding to the predetermined RF band of the connected at least one acoustic filter. The shunt inductance provides impedance matching between each of the at least one antenna port and each of the at least one acoustic filter connect to the at least one antenna port.

Abstract: An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 ?-cm, and less than approximately 15000 ?-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 ?m to approximately 30.0 ?m, and is substantially without iron (Fe).

Abstract: An acoustic resonator filter comprises a plurality of resonator structures. One or more of the plurality of resonator structures comprises a substrate having a first surface and a second surface. The resonator structure also comprises a piezoelectric layer disposed over the substrate. The acoustic wave resonator structure also comprises a layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. The layer has a first surface and a second surface. The layer and the piezoelectric layer have a combined thickness (H) selected so an anti-resonance (AR) condition exists for an undesired bulk vertical shear mode between the first surface of the piezoelectric layer and the second surface of the layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: An acoustic resonator filter comprises a plurality of resonator structures. One or more of the plurality of resonator structures comprises a substrate having a first surface and a second surface. The resonator structure also comprises a piezoelectric layer disposed over the substrate. The SAW resonator structure also comprises a layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. The layer has a first surface and a second surface. The layer and the piezoelectric layer have a combined thickness (H) selected so an anti-resonance (AR) condition exists for an undesired bulk vertical shear mode between the first surface of the piezoelectric layer and the second surface of the layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A silicon layer disposed between a first surface of the layer and a second surface of the piezoelectric layer. A first surface of the silicon layer has a smoothness sufficient to foster atomic bonding between the first surface of the silicon layer and the second surface of the piezoelectric layer.

Abstract: An acoustic resonator structure includes an acoustic stack. The acoustic stack comprises: a substrate having a first surface and a second surface; a piezoelectric layer disposed over the substrate, the piezoelectric layer having a first surface, and a second surface. The first surface of the substrate, or the second surface of the piezoelectric layer, comprises a plurality of features; and a plurality of electrodes disposed over the first surface of the piezoelectric layer. The plurality of electrodes is configured to generate acoustic waves in the piezoelectric layer. The acoustic stack also includes a temperature compensation layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer.

Abstract: Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.

Abstract: A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

Abstract: A multiplexer device includes a single die, at least three acoustic filters and at least one antenna port arranged on the single die, and a shunt inductance connected between each of the at least one antenna port and ground. Each acoustic filter includes one of a transmit or receive filter corresponding to a predetermined radio frequency band. The at least one antenna port is connected to at least one antenna, respectively, where each of the at least one antenna port is further connected to at least one acoustic filter arranged on the single die, and is configured to pass RF signals corresponding to the predetermined RF band of the connected at least one acoustic filter. The shunt inductance provides impedance matching between each of the at least one antenna port and each of the at least one acoustic filter connect to the at least one antenna port.

Abstract: An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 ?-cm, and less than approximately 15000 ?-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 ?m to approximately 30.0 ?m, and is substantially without iron (Fe).