Patents by Inventor Stephen S. Furkay
Stephen S. Furkay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150192533Abstract: Various embodiments provide systems, computer program products and computer implemented methods. In some embodiments, a system includes a computer-implemented method of determining a dopant concentration in a semiconductor material proximate a metal interface, including determining an electric potential within the semiconductor material at a first voltage range using a known dopant concentration, wherein the dopant is a mobile ion dopant, determining a concentration of a reduced dopant in the semiconductor material, calculating a new expected average dopant concentration for the dopant, calculating a new average dopant concentration for the dopant using the equation with a first damping parameter having a value that is determined by a change in electric potential at a node point in the semiconductor material and determining whether ionic convergence has occurred by determining whether expected dopant concentration deviates from an average concentration by less than a threshold value.Type: ApplicationFiled: January 6, 2014Publication date: July 9, 2015Applicant: International Business Machines CorporationInventors: Mohit Bajaj, Stephen S. Furkay, Karthik Venkataraman
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Patent number: 7700453Abstract: Method of fabricating a varactor that includes providing a semiconductor substrate, doping a lower region of the semiconductor substrate with a first dopant at a first energy level, doping a middle region of the semiconductor substrate with a second dopant at a second energy level lower than the first energy level, and doping an upper region of the semiconductor substrate with a third dopant at a third energy level lower than the second energy level.Type: GrantFiled: April 9, 2007Date of Patent: April 20, 2010Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Jeffrey B. Johnson, Robert M. Rassel, David C. Sheridan
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Patent number: 7518215Abstract: A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single implant mask which is used in forming the subcollector/cathode, collector/well and hyperabrupt junction.Type: GrantFiled: January 6, 2005Date of Patent: April 14, 2009Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Jeffrey B. Johnson, Robert M. Rassel
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Patent number: 7253073Abstract: A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.Type: GrantFiled: January 23, 2004Date of Patent: August 7, 2007Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Jeffrey B. Johnson, Robert M. Rassel, David C. Sheridan
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Patent number: 7183628Abstract: A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.Type: GrantFiled: December 7, 2004Date of Patent: February 27, 2007Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Jeffrey B. Johnson, Robert M. Rassel, David C. Sheridan
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Patent number: 7057923Abstract: A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) or GST layer. The cell also includes a stylus with the apex of the stylus contacting the GST layer.Type: GrantFiled: December 10, 2003Date of Patent: June 6, 2006Assignee: International Buisness Machines Corp.Inventors: Stephen S. Furkay, David V. Horak, Chung H. Lam, Hon-Sum P. Wong
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Patent number: 7005665Abstract: The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.Type: GrantFiled: March 18, 2004Date of Patent: February 28, 2006Assignee: International Business Machines CorporationInventors: Stephen S. Furkay, Hendrick Hamann, Jeffrey B. Johnson, Chung H. Lam, Hon-Sum P. Wong
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Patent number: 6878983Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.Type: GrantFiled: December 4, 2003Date of Patent: April 12, 2005Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Mohamed Youssef Hammad, Jeffrey B. Johnson
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Patent number: 6803269Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.Type: GrantFiled: August 14, 2002Date of Patent: October 12, 2004Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Mohamed Youssef Hammad, Jeffrey B. Johnson
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Publication number: 20040082124Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.Type: ApplicationFiled: December 4, 2003Publication date: April 29, 2004Applicant: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Mohamed Youssef Hammad, Jeffrey B. Johnson
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Publication number: 20040032004Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.Type: ApplicationFiled: August 14, 2002Publication date: February 19, 2004Applicant: International Business Machines CorporationInventors: Douglas D. Coolbaugh, Stephen S. Furkay, Mohamed Youssef Hammad, Jeffrey B. Johnson