Abstract: A method for producing a neutrons includes triggering a raising or a lowering of a temperature of a pyroelectric crystal of less than about 40° C. to produce a voltage of negative polarity of at least ?100 keV on a surface of a deuterated or tritiated target coupled thereto. A deuterium ion source is pulsed to produce a deuterium ion beam. The accelerating of the deuterium ion beam is achieved by accelerating voltage of the pyroelectric crystal toward the deuterated or tritiated target to produce neutrons. Furthermore, the pyroelectric crystal, the deuterated or tritiated target, and the deuterium ion source are coupled to a common support. The method also includes throwing the common support housing the pyroelectric crystal, the deuterated or tritiated target, and the deuterium ion source near an unknown threat for identification thereof.

Abstract: Devices, methods and techniques are disclosed to perform high confidence sterilization of indoor air with low power requirements. In one example aspect, a sterilization device includes a power source, an energy storage coupled to the power source and configured to store electric charges, a set of electrodes arranged in a specified geometry to have a fixed characteristic impedance, and a switch positioned between the energy storage and the set of electrodes. The switch is configured to operate to establish a pulsed electric field on the set of electrodes.

Abstract: Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Abstract: A method for producing a neutrons includes producing a voltage of negative polarity of at least ?100 keV on a surface of a deuterated or tritiated target in response to a temperature change of a pyroelectric crystal of less than about 40° C., the pyroelectric crystal having the deuterated or tritiated target coupled thereto, pulsing a deuterium ion source to produce a deuterium ion beam, accelerating the deuterium ion beam to the deuterated or tritiated target, and directing the ion beam onto the deuterated or tritiated target to make neutrons using at least one element of the following: a voltage of the pyroelectric crystal and a high gradient insulator (HGI) surrounding the pyroelectric crystal. The accelerating of the deuterium ion beam is achieved by using an ion accelerating mechanism comprising a pyroelectric stack accelerator having a first thermal altering mechanism for changing a temperature of the pyroelectric stack accelerator.

Abstract: Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Abstract: Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Abstract: Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Abstract: Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Abstract: Devices, methods and techniques are disclosed to perform high confidence sterilization of indoor air with low power requirements. In one example aspect, a sterilization device includes a power source, an energy storage coupled to the power source and configured to store electric charges, a set of electrodes arranged in a specified geometry to have a fixed characteristic impedance, and a switch positioned between the energy storage and the set of electrodes. The switch is configured to operate to establish a pulsed electric field on the set of electrodes.

Abstract: Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Abstract: A method for producing a neutrons includes producing a voltage of negative polarity of at least ?100 keV on a surface of a deuterated or tritiated target in response to a temperature change of a pyroelectric crystal of less than about 40° C., the pyroelectric crystal having the deuterated or tritiated target coupled thereto, pulsing a deuterium ion source to produce a deuterium ion beam, accelerating the deuterium ion beam to the deuterated or tritiated target, and directing the ion beam onto the deuterated or tritiated target to make neutrons using at least one element of the following: a voltage of the pyroelectric crystal and a high gradient insulator (HGI) surrounding the pyroelectric crystal. The accelerating of the deuterium ion beam is achieved by using an ion accelerating mechanism comprising a pyroelectric stack accelerator having a first thermal altering mechanism for changing a temperature of the pyroelectric stack accelerator.

Abstract: According to one embodiment, a method for producing a directed neutron beam includes producing a voltage of negative polarity of at least ?100 keV on a surface of a deuterated or tritiated target in response to a temperature change of a pyroelectric crystal of less than about 40° C., the pyroelectric crystal having the deuterated or tritiated target coupled thereto, pulsing a deuterium ion source to produce a deuterium ion beam, accelerating the deuterium ion beam to the deuterated or tritiated target to produce a neutron beam, and directing the ion beam onto the deuterated or tritiated target to make neutrons using at least one of a voltage of the pyroelectric crystal, and a high gradient insulator (HGI) surrounding the pyroelectric crystal. The directionality of the neutron beam is controlled by changing the accelerating voltage of the system. Other methods are presented as well.

Abstract: Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Abstract: A photonic device having wide bandgap (WBG) materials which change electrical behaviors in response to low-intensity light is disclosed. The device comprises an optical waveguide located in an optical path of light to receive the light and to spatially confine the received light as guided light at a higher optical intensity than the received light; a wide bandgap (WBG) material located in an optical path of the guided light output by the optical waveguide; and two electrodes formed at two different locations on the WBG material to provide two electrical contacts of an electrical path within the WBG material, wherein the WBG material exhibits an electrical conductivity that varies with a level of the guided light output by the optical waveguide to turn on or off the electrical path between the two electrodes.

Abstract: Methods, systems, and devices are disclosed for photoconductive switch package configurations. In some aspects, a photoconductive switch package includes of a wide bandgap photoconductive material (e.g., GaN, ZnO, diamond, AlN, SiC, BN, etc.), a source for energetic photons (e.g., a laser), a mechanism to couple the laser into the switch, and a mechanism for high voltage to enter and leave the switch package. In some implementations, the disclosed photoconductive switch packages can be configured as a three terminal device, e.g., similar to transistors, with one of the terminals being laser input or the voltage input to the laser system.

Abstract: A photonic device having wide bandgap (WBG) materials which change electrical behaviors in response to low-intensity light is disclosed. The device comprises an optical waveguide located in an optical path of light to receive the light and to spatially confine the received light as guided light at a higher optical intensity than the received light; a wide bandgap (WBG) material located in an optical path of the guided light output by the optical waveguide; and two electrodes formed at two different locations on the WBG material to provide two electrical contacts of an electrical path within the WBG material, wherein the WBG material exhibits an electrical conductivity that varies with a level of the guided light output by the optical waveguide to turn on or off the electrical path between the two electrodes.

Abstract: Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

Abstract: Methods, systems, and devices are disclosed for photoconductive switch package configurations. In some aspects, a photoconductive switch package includes of a wide bandgap photoconductive material (e.g., GaN, ZnO, diamond, AlN, SiC, BN, etc.), a source for energetic photons (e.g., a laser), a mechanism to couple the laser into the switch, and a mechanism for high voltage to enter and leave the switch package. In some implementations, the disclosed photoconductive switch packages can be configured as a three terminal device, e.g., similar to transistors, with one of the terminals being laser input or the voltage input to the laser system.

Abstract: A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated based on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.

Abstract: According to one embodiment, an apparatus includes a pyroelectric crystal, a deuterated or tritiated target, an ion source, and a common support coupled to the pyroelectric crystal, the deuterated or tritiated target, and the ion source. In another embodiment, a method includes producing a voltage of negative polarity on a surface of a deuterated or tritiated target in response to a temperature change of a pyroelectric crystal, pulsing a deuterium ion source to produce a deuterium ion beam, accelerating the deuterium ion beam to the deuterated or tritiated target to produce a neutron beam, and directing the ion beam onto the deuterated or tritiated target to make neutrons using a voltage of the pyroelectric crystal and/or an HGI surrounding the pyroelectric crystal. The directionality of the neutron beam is controlled by changing the accelerating voltage of the system. Other apparatuses and methods are presented as well.