Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.

Abstract: A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.

Abstract: The present invention relates to light omitting diodes having an AlGaInP active layer disposed between two cladding layers of AlGaInP, with a strain layer grown on the second cladding layer and comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with preselected composition. In one embodiment, the composition of the alternated AlGaInP layers is an ohmic n-electrode on a rear surface of a GaAs substrate: a distributed AlGaAs Bragg reflecting layer in the form of a multi-layer lamination; a first, lower AlGaInP cladding layer grown on the reflecting layer; an AlGaInP active layer grown on the lower cladding layer; a second, upper AlGaInP cladding layer grown on the active layer; a strain layer grown on the second cladding layer, the strain layer comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with the composition: (AlxGa1-x)1-yInyP/(AlnGa1-n)1-hInhP, where 0.5≦x≦1; 0.4≦y≦0.6/0≦a≦0.4; 0≦b≦0.4.

Abstract: A semiconductor device has a window layer (8), a current spreading layer (7) below the window layer and a cladding layer (6) below the current spreading layer. The band gap energy of the spreading layer is higher than that of the window layer and lower than that of the cladding layer and the carrier concentration of the spreading layer is lower than that of the window layer and higher than that of the cladding layer.

Abstract: A semiconductor light emitting device includes two AlGaAs and AlGaInP Bragg reflector layers below an active layer.