Abstract: An integrated circuit (IC) includes an adaptive voltage scaling (AVS) controller configured to control a voltage supplied to a portion of the IC and at least one sensor configured to sense at least one state of the IC and to provide an output signal indicative of the at least one sensed state to the AVS controller, the IC having a first setting and a second setting, the AVS controller being configured to use the output signal to control the voltage in the first setting and the AVS controller being configured to control the voltage independently of the output signal in the second setting. Also a method of performing AVS is provided.

Abstract: An integrated circuit (IC) includes an adaptive voltage scaling (AVS) controller configured to control a voltage supplied to a portion of the IC and at least one sensor configured to sense at least one state of the IC and to provide an output signal indicative of the at least one sensed state to the AVS controller, the IC having a first setting and a second setting, the AVS controller being configured to use the output signal to control the voltage in the first setting and the AVS controller being configured to control the voltage independently of the output signal in the second setting. Also a method of performing AVS is provided.

Abstract: A memory refresh system and method. The inventive system includes a mechanism for selectively refreshing elements of a memory array in response to signals from a conventional memory management system. In the illustrative application, the memory is dynamic random access memory and the inventive system is adapted to provide for selective refresh of those DRAM memory elements to which data has been or will be stored. This allows for the use of advantageous DRAM memory elements while minimizing the power consumption thereof. Consequently, the utility of DRAM memory elements is extended to a variety of power sensitive applications including cellular telephony and mobile computing.

Abstract: The flash and SRAM memory are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce overall power consumption of a mobile telephone employing the ASIC. The flash memory system includes a flash memory array configured to provide a set of individual flash macros and a flash memory controller for accessing the flash macros. The flash memory controller includes a read while writing unit for writing to one of the flash macros while simultaneously reading from another of the flash macros. By permitting read while writing, read operations need not be deferred until completion of pending write operations. The flash memory controller also includes programmable wait state registers. Each wait state register stores a programmable number of flash bus wait states associated with a portion of the flash memory.

Abstract: The flash and SRAM memory are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce overall power consumption of a mobile telephone employing the ASIC. The flash memory system includes a flash memory array configured to provide a set of individual flash macros and a flash memory controller for accessing the flash macros. The flash memory controller includes a read while writing unit for writing to one of the flash macros while simultaneously reading from another of the flash macros. By permitting read while writing, read operations need not be deferred until completion of pending write operations. The flash memory controller also includes programmable wait state registers. Each wait state register stores a programmable number of flash bus wait states associated with a portion of the flash memory.

Abstract: The flash and SRAM memory are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce overall power consumption of a mobile telephone employing the ASIC. The flash memory system includes a flash memory array configured to provide a set of individual flash macros and a flash memory controller for accessing the flash macros. The flash memory controller includes a read while writing unit for writing to one of the flash macros while simultaneously reading from another of the flash macros. By permitting read while writing, read operations need not be deferred until completion of pending write operations. The flash memory controller also includes programmable wait state registers. Each wait state register stores a programmable number of flash bus wait states associated with a portion of the flash memory.