Abstract: The invention describes the use of a biomarker pentylfuran to detect bacterial and/or fungal pathogens. Pentylfuran is released from certain pathogens and detected in the headspace gas of an in vitro culture or in the breath sample of a patient. Pentylfuran is particularly useful in the detection of Aspergillus species, especially Aspergillus fumigatus which is a pathogen of humans.

Abstract: A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure.

Abstract: A method of fabricating a copper-containing structure, preferably within a microelectronic device, including a rapid temperature ramp from about 20 degrees Celsius up to between about 300 and 500 degrees Celsius, preferably about 400 degrees Celsius, at a rate of between about 20 and 60 degrees Celsius per second, preferably about 40 degrees Celsius per second.

Abstract: Methods for fabricating a capacitor in a microelectronic device utilizing a sputter deposition technique for forming a capacitor dielectric material on a copper-containing plate of the capacitor. Such a sputter deposition technique can be achieved at about room temperature, which should not induce stresses on the copper-containing plate, and, thus, should not generate hillocks.

Abstract: A method of fabricating a copper-containing structure, preferably within a microelectronic device, including a rapid temperature ramp from about 20 degrees Celsius up to between about 300 and 500 degrees Celsius, preferably about 400 degrees Celsius, at a rate of between about 20 and 60 degrees Celsius per second, preferably about 40 degrees Celsius per second.

Abstract: A method includes forming a first damascene interconnect layer in a first dielectric. A first dielectric film is deposited on the first dielectric and on the first damascene interconnect layer. A conductor layer is deposited on the first dielectric film. The conductor layer is patterned, via a single mask, to form a first conductor and a second conductor. The first damascene interconnect level, the first dielectric film, and the first conductor form a capacitor and the second conductor forms a resistor.

Abstract: A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure.

Abstract: A method, apparatus, system, and machine-readable medium for an interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to forming a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure.

Abstract: A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.

Abstract: A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.

Abstract: A process of forming an emitter of a bipolar transistor is described. Dopants of a first conductivity type is implanted in the substrate to form the base. Dopants of a second conductivity type is then implanted into the base region to form a substrate emitter region. A polysilicon layer is then deposited over the substrate emitter and doped to form the doped polysilicon layer. An outdiffusion step follows to link the doped polysilicon layer to the substrate emitter.

Abstract: A method for forming contact openings in semiconductor devices. In borosilicate glass layers deposited over the gate and drain area of a device, followed by a borophosphosilicate glass layer. After masking with photoresist and defining openings, the borophosphosilicate glass is isotropically etched to undercut the resist layer. A plasma etch is utilized to anisotropically etch the borosilicate glass layer and expose the surface of the drain area. After the photoresist is stripped away, a reflow step is employed to reduce the sharp edges of the glass layer and result in a sloped contact opening profile. Good metal coverage is achieved while maintaining isolation of the gate.