Abstract: A substrate support includes a monolithic anisotropic body, which includes first, second and intermediate layers. The first layer is formed of a first material and disposed therein are RF and clamping electrodes. The second layer is formed of the first material or a second material and disposed therein is a heating element. The intermediate layer is formed of a different material than the first and second layers, such that at least one of: a thermal energy conductivity of the intermediate layer is different than a thermal energy conductivity of at least one of the first or second materials; or an electrical energy conductivity of the intermediate layer is different than an electrical conductivity of at least one of the first or second materials. Either the intermediate layer is disposed between the first and second layers or the second layer is disposed between the first and intermediate layers.

Abstract: A robotics-assisted foundation installation system is provided in which data reporting the X, Y, and Z positions of foundation column tops are sent from a total surveying station to a grid control system. The grid control system receives the data and associates specific data with specific columns in an array—the “grid.” The grid control system compares the actual positions of the columns in the grid to target positions that were determined based on the requirements of the structure to be supported. After determining differences between the actual positions and the target positions, the grid control system sends instructions to column positioning tools associated with the individual columns. Actuators in a column positioning tool are directed by the grid control system to adjust the position of the associated column. Once the live streamed data confirms that each column is in the proper position, the columns are fixed in place.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to reduce nonuniformity and adjust deposited film profiles.

Abstract: A substrate processing system for processing a substrate within a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from a RF generator and impedance matches an input of the matching network to an output of the RF generator. The tuning circuit is distinct from the matching network and includes a circuit component having a first impedance. The tuning circuit receives an output of the matching network and outputs a second RF signal to a first electrode in a substrate support. The controller determines a target impedance for the circuit component, and based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency to alter the first impedance of the circuit component to match the target impedance.

Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An integrated lighting assembly (10) includes an injection molded housing that has a base (12) with first fastening elements (22) molded thereon, a cover (18) with second fastening elements (24) molded thereon, and a substrate (16) intermediate the base and cover. An electrical circuit (30) is formed on the substrate and a lighting element (32) is attached to the electrical circuit. A reflective cone (34, 36) surrounds the lighting element to intensify its light and direct light through a diffuser lens (28) formed on the base. A reflective wall (26) on the base reflects light emanating from the diffuser lens in a predetermined pattern. Metal for the reflective surface and electrical circuit is deposited in a single operation. The base and cover are connected to the substrate by living hinges. When the cover is folded onto the base, the first and second fastening elements snap together to form a three dimensional lighting assembly.

Abstract: A method for bonding together at least two conductive members 20, wherein each member includes at least one metallic 22 having a respective bonding area 24. At least one member has a deposition of metallic bonding material 26 attached to each respective conductor proximate each bonding area, and at least one member has a plastic element 28 attached thereto proximate each respective bonding area. The members 20 are positioned in a predetermined orientation, clamped together between an ultrasonic horn and anvil arrangement, with pressure and orthogonal ultrasonic energy being applied thereto so that each plastic element 28 is heated, which in turn melts the bonding material 26. Any plastic element material between the conductors is squeezed away therefrom and the respective conductors 22 are brought into proximity with each other so that a molten joint of bonding material physically contacts each respective conductor.

Abstract: A method of soldering materials by controlling ultrasonic energy to effect melting of only the solder in an assembly to be joined that is carried on a low temperature melting substrate.