Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: A showerhead for processing a substrate comprises a backplate and a faceplate attached to the backplate. The faceplate comprises a first surface facing the backplate, a second surface opposite to the first surface, and a plurality of through holes extending between the first and second surfaces. At least one of the first and second surfaces is at least partially contoured.

Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: Electrostatic chuck (ESC) apparatuses and systems are provided. An ESC may have one or more chucking electrodes and a blocking electrode that surrounds the chucking electrodes. The blocking electrode may reduce non-uniformities in semiconductor processing operations performed with the ESC. In some implementations, the blocking electrode is positioned beneath the chucking electrodes.

Abstract: A system for supplying a gas to a plurality of stations of a substrate processing tool includes a gas source to supply the gas, a mass flow controller connected to the gas source, a plurality of conduits, and a plurality of heaters. The conduits are interconnected to each other and are in fluid communication with each other. The conduits include an inlet connected to the mass flow controller, a plurality of portions including a plurality of outlets, and a plurality of gas flow restrictors. The outlets are connected to respective manifolds to supply the gas to the stations. The gas flow restrictors are arranged in the respective portions of the plurality of conduits proximate to the outlets. The heaters are coupled to the respective portions of the conduits that are proximate to the outlets and that include the gas flow restrictors.

Abstract: Rotational indexers are provided that allow for wafer-by-wafer centering to be performed in association with each wafer pedestal-to-pedestal transfer operation within a multi-station chamber. One such rotational indexer has a rotational center axis that is movable along one or more lateral directions in order to provide wafer centering capability; sealing arrangements with lateral movement capability are provided for such implementations. Another such rotational indexer uses additional rotational capability at the wafer supports of the indexer, in combination with deliberate off-center placement of the wafers on the wafer supports of the indexer, to provide wafer centering capability.

Abstract: A substrate support includes a monolithic anisotropic body, which includes first, second and intermediate layers. The first layer is formed of a first material and disposed therein are RF and clamping electrodes. The second layer is formed of the first material or a second material and disposed therein is a heating element. The intermediate layer is formed of a different material than the first and second layers, such that at least one of: a thermal energy conductivity of the intermediate layer is different than a thermal energy conductivity of at least one of the first or second materials; or an electrical energy conductivity of the intermediate layer is different than an electrical conductivity of at least one of the first or second materials. Either the intermediate layer is disposed between the first and second layers or the second layer is disposed between the first and intermediate layers.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to reduce nonuniformity and adjust deposited film profiles.

Abstract: A substrate processing system for processing a substrate within a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from a RF generator and impedance matches an input of the matching network to an output of the RF generator. The tuning circuit is distinct from the matching network and includes a circuit component having a first impedance. The tuning circuit receives an output of the matching network and outputs a second RF signal to a first electrode in a substrate support. The controller determines a target impedance for the circuit component, and based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency to alter the first impedance of the circuit component to match the target impedance.

Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both. The coating can be applied in situ a processing chamber of a substrate processing tool and periodically removed and re-applied in situ to create fresh coating.

Abstract: An integrated lighting assembly (10) includes an injection molded housing that has a base (12) with first fastening elements (22) molded thereon, a cover (18) with second fastening elements (24) molded thereon, and a substrate (16) intermediate the base and cover. An electrical circuit (30) is formed on the substrate and a lighting element (32) is attached to the electrical circuit. A reflective cone (34, 36) surrounds the lighting element to intensify its light and direct light through a diffuser lens (28) formed on the base. A reflective wall (26) on the base reflects light emanating from the diffuser lens in a predetermined pattern. Metal for the reflective surface and electrical circuit is deposited in a single operation. The base and cover are connected to the substrate by living hinges. When the cover is folded onto the base, the first and second fastening elements snap together to form a three dimensional lighting assembly.

Abstract: A method for bonding together at least two conductive members 20, wherein each member includes at least one metallic 22 having a respective bonding area 24. At least one member has a deposition of metallic bonding material 26 attached to each respective conductor proximate each bonding area, and at least one member has a plastic element 28 attached thereto proximate each respective bonding area. The members 20 are positioned in a predetermined orientation, clamped together between an ultrasonic horn and anvil arrangement, with pressure and orthogonal ultrasonic energy being applied thereto so that each plastic element 28 is heated, which in turn melts the bonding material 26. Any plastic element material between the conductors is squeezed away therefrom and the respective conductors 22 are brought into proximity with each other so that a molten joint of bonding material physically contacts each respective conductor.

Abstract: A method of soldering materials by controlling ultrasonic energy to effect melting of only the solder in an assembly to be joined that is carried on a low temperature melting substrate.