Patents by Inventor Stephen Van Campen

Stephen Van Campen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power switching transistors
    Patent number: 7982239
    Abstract: In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source, and a second VJFET transistor having a source, and a gate disposed on each side of the second VJFET source. At least one gate of the first VJFET is separated from at least one gate of the second VJFET by a channel. The integrated semiconductor device also includes a Junction Barrier Schottky (JBS) diode positioned between the first and second VJFETs. The JBS diode comprises a metal contact that forms a rectifying contact to the channel and a non-rectifying contact to at least one gate of the first and second VJFETs, and the metal contact is an anode of the JBS diode.
    Type: Grant
    Filed: June 13, 2007
    Date of Patent: July 19, 2011
    Assignee: Northrop Grumman Corporation
    Inventors: Ty R. McNutt, Eric J. Stewart, Rowland C. Clarke, Ranbir Singh, Stephen Van Campen, Marc E. Sherwin
  • Vertically integrated dual gate transistor structure and method of making same
    Patent number: 7535039
    Abstract: A dual gate power switch comprised of a vertical arrangement of a normally off SIT (static induction transistor) in series with a normally on SIT in a monolithic semiconductor structure. The structure includes a first pillar having at the base thereof laterally extending shoulder portions having sections of a first gate for controlling the normally off SIT. The structure includes a second pillar, of a width greater than the first pillar and which also has laterally extending shoulder portions having sections of a second gate for controlling the normally on SIT. Contacts are provided for SIT operation.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: May 19, 2009
    Assignee: Northrop Grumman Corp
    Inventors: Eric J. Stewart, Stephen Van Campen, Rowland C. Clarke
  • Power switching transistors
    Publication number: 20080308838
    Abstract: In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source, and a second VJFET transistor having a source, and a gate disposed on each side of the second VJFET source. At least one gate of the first VJFET is separated from at least one gate of the second VJFET by a channel. The integrated semiconductor device also includes a Junction Barrier Schottky (JBS) diode positioned between the first and second VJFETs. The JBS diode comprises a metal contact that forms a rectifying contact to the channel and a non-rectifying contact to at least one gate of the first and second VJFETs, and the metal contact is an anode of the JBS diode.
    Type: Application
    Filed: June 13, 2007
    Publication date: December 18, 2008
    Inventors: Ty R. McNutt, Eric J. Stewart, Rowland C. Clarke, Ranbir Singh, Stephen Van Campen, Marc E. Sherwin