Abstract: A thin film battery comprises a glass or ceramic substrate having a coefficient of thermal expansion (“CTE”) of from about 7 to about 10 ppm/° K, a continuous metal or metal oxide cathode current collector and having a thickness of less than about 3 micrometers, the cathode current collector being superjacent to the glass or ceramic substrate, a cathode material layer comprising lithium transition metal oxides that is a continuous film having a thickness of from about 10 to about 80 micrometers, the cathode material layer being superjacent to the cathode current collector, a LiPON electrolyte layer superjacent to the cathode material layer and having a thickness of from about 0.5 to about 4 micrometers, and an anode current collector with an optional anode material. Methods of making and using the batteries are described.

Abstract: A thin film battery comprises a glass or ceramic substrate having a coefficient of thermal expansion (“CTE”) of from about 7 to about 10 ppm/° K, a continuous metal or metal oxide cathode current collector and having a thickness of less than about 3 micrometers, the cathode current collector being superjacent to the glass or ceramic substrate, a cathode material layer comprising lithium transition metal oxides that is a continuous film having a thickness of from about 10 to about 80 micrometers, the cathode material layer being superjacent to the cathode current collector, a LiPON electrolyte layer superjacent to the cathode material layer and having a thickness of from about 0.5 to about 4 micrometers, and an anode current collector with an optional anode material. Methods of making and using the batteries are described.

Abstract: A thin film battery and charging system is provided comprising a cathode material, a cathode current collector, an anode current collector, and an electrolyte layer separating the cathode material from the anode current collector configured to form a battery having at least one intercalating electrode. The system additionally comprises an integrated-circuit battery-charging and managing circuit and a user controlled input having selection capability for the user to choose from a plurality of levels of state of charge of the battery. A method of charging a thin film battery is also described.

Abstract: An inductor formed on a semiconductor substrate, comprising active device regions. The inductor comprises conductive lines formed on a dielectric layer overlying the semiconductor substrate. The conductive lines are patterned and etched into the desired shape, in one embodiment a planar spiral. A region of the substrate below the inductor are removed to lower the inductive Q factor.

Abstract: An inductor formed on a semiconductor substrate, comprising active device regions. The inductor comprises conductive lines formed on a dielectric layer overlying the semiconductor substrate. The conductive lines are patterned and etched into the desired shape, in one embodiment a planar spiral. A region of the substrate below the inductor are removed to lower the inductive Q factor.

Abstract: The present invention provides a method of manufacturing a semiconductor device. In one embodiment, the method includes forming a positive relief structure from a material located on a substrate, the step of forming the positive relief structure leaving an unwanted remnant of said material proximate a base of the positive relief structure. The method further includes cleaning the positive relief structure. In addition, the method includes removing the unwanted remnant with a gas containing fluorine and that is substantially free of hydrogen.

Abstract: The present invention provides a method of manufacturing a semiconductor device. In one embodiment, the method includes forming a positive relief structure from a material located on a substrate, the step of forming the positive relief structure leaving an unwanted remnant of said material proximate a base of the positive relief structure. The method further includes cleaning the positive relief structure. In addition, the method includes removing the unwanted remnant with a gas containing fluorine and that is substantially free of hydrogen.

Abstract: Disclosed is an apparatus which can serve to detect, count, size discriminate and analyze the chemical composition of particles in the air or process gases. In a preferred embodiment, the particles enter via a capillary into a differentially pumped chamber. A pulsed laser which is continuously fired is focused at an opening in the chamber. When the particles come into the path of the laser beam, the particles are fragmented and ionized. A dual time of flight mass spectrum is produced, recorded with an oscilloscope and analyzed with a computer. The mass spectrum information enables the determination of the chemical nature and concentration of the species of the particles, the particle size and the elemental composition of airborne particles in real time. Once these parameters are determined the source of the particles can be determined and eliminated from the environment and process. Thus, the inventive apparatus is advantageously used in conjunction with a facility, i.e.

Abstract: It has been found that in the preparation of devices having repetitive layers, such as distributed Bragg reflectors, the dopant introduced during processing redistributes itself in a deleterious manner. In particular, this dopant through various effects segregates and diffuses from one layer into the interface region of the second layer. As a result, properties such as electrical resistance of the structure become unacceptably high. By utilizing various expedients such as carbon doping this segregation and its associated deleterious effects are avoided.

Abstract: Gas phase processes such as plasma etching of a semiconductor substrate is monitored by utilizing the optogalvanic effect. The substrate is subjected to light and in response emits an electron current whose magnitude is representative of the composition at the surface of the substrate. The monitored current is a sensitive indication of surface contamination and of compositional changes associated with the gas phase procedure. The technique is effectively utilized in fabricating devices such as semiconductor devices.