Patents by Inventor Stephen W. Hymes

Stephen W. Hymes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composition and method used for chemical mechanical planarization of metals
    Patent number: 10373842
    Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: August 6, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Song Y. Chang, Mark Evans, Dnyanesh Chandrakant Tamboli, Stephen W. Hymes
  • Composition and Method Used for Chemical Mechanical Planarization of Metals
    Publication number: 20170372918
    Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.
    Type: Application
    Filed: November 20, 2015
    Publication date: December 28, 2017
    Applicant: Versum Materials US LLC
    Inventors: Song Y. Chang, Mark Evans, Dnyanesh Chandrakant Tamboli, Stephen W. Hymes
  • Composition and Method Used for Chemical Mechanical Planarization of Metals
    Publication number: 20160079084
    Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.
    Type: Application
    Filed: November 20, 2015
    Publication date: March 17, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Song Y. Chang, Mark Evans, Dnyanesh Chandrakant Tamboli, Stephen W. Hymes
  • Composition and method used for chemical mechanical planarization of metals
    Publication number: 20080254629
    Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.
    Type: Application
    Filed: June 16, 2008
    Publication date: October 16, 2008
    Inventors: Song Y. Chang, Mark Evans, Dnyanesh Tamboli, Stephen W. Hymes
  • Composition and method used for chemical mechanical planarization of metals
    Publication number: 20040175942
    Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.
    Type: Application
    Filed: December 23, 2003
    Publication date: September 9, 2004
    Inventors: Song Y. Chang, Mark Evans, Dnyanesh Tamboli, Stephen W. Hymes
  • Site-selective electrochemical deposition of copper
    Patent number: 6168704
    Abstract: A method is provided for selectively electrochemically depositing copper. The method includes forming a layer of dielectric material above a structure layer, forming a conductive layer above the layer of dielectric material and forming an opening in the conductive layer and the layer of dielectric material. The method also includes selectively forming at least one barrier metal layer and a copper seed layer only in the opening, the at least one barrier metal layer and the copper seed layer being conductively coupled to the conductive layer. The method further includes forming an insulating layer above the conductive layer, and selectively electrochemically depositing copper only in the opening.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: January 2, 2001
    Assignee: Advanced Micro Device, Inc.
    Inventors: Thomas M. Brown, Stephen W. Hymes