Abstract: An electronic package device is disclosed including a microelectronic package and a heat sink positioned over the microelectronic package. A thermal interface element is positioned between the microelectronic package and the heat sink. The thermal interface element is elongated and has differing thicknesses along its length to enhance the dissipation of heat.

Abstract: An electronic package device is disclosed including a microelectronic package and a heat sink positioned over the microelectronic package. A thermal interface element is positioned between the microelectronic package and the heat sink. The thermal interface element is elongated and has differing thicknesses along its length to enhance the dissipation of heat.

Abstract: In an integrated circuit package employing solder bump technology, a metal layer placed on the surface of a substrate below an array of bonding pads is split and displaced from its axis at selected locations to preserve electrical continuity, but to also lower the height of an insulating solder mask layer at those locations.

Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer includes a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer.

Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer.

Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer.

Abstract: A pinning process including the steps of gold-plating through-holes in a laminate carrier and crimping old or gold-plated pin located in the through-holes to form a pin head on the top and a pin bulge on the bottom of the laminate carrier to produce a plastic pin grid array. A variety of mechanical forming processes may be employed to form the pin heads and pin bulges and cause the pin to at least partially, and preferably substantially, fill and contact the gold-plated through-hole including swage pinning, impact pinning, and double-die pinning operations. By combining the steps of gold-plating through-holes of a laminate carrier and using a mechanical pinning process to crimp a gold or gold-plated pin in the through-holes, a reliable mechanical and electrical connection may be established between the pin and the metal lines both inside and on the surface of the laminate carrier without the need for lead-containing solders and pastes.

Abstract: A printed circuit board is provided comprising a substrate, a conductor on the surface of the substrate, and an electronic component mounted on the conductor. The printed circuit board includes a first thermally conductive layer within the substrate and a second thermally conductive layer on a portion of the surface of the substrate and spaced from the electronic component. The electronic component is thermally coupled to the second thermally conductive layer by a thermally conductive aperture positioned within the substrate and connected to the conductor and the first thermally conductive layer. The first thermally conductive layer is connected to the second thermally conductive layer by a plurality of apertures also positioned in the substrate. Another printed circuit board is also provided comprising a first plurality of laminate dielectric layers, a conductor on a surface of the first plurality of laminated dielectric layers, and an electronic component mounted on the conductor.

Abstract: A package for mounting an integrated circuit chip to a circuit board or the like is provided. The package includes a chip carrier which has a metal substrate including first and second opposed faces. A dielectric coating is provided on at least one of the faces, which preferably is less than about 20 microns in thickness, and preferably has a dielectric constant from about 3.5 to about 4.0. Electrical circuitry is disposed on the dielectric coating, said circuitry including chip mounting pads, connection pads and circuit traces connecting the chip mounting pads to the connection pads. An IC chip is mounted by flip chip or wire bonding or adhesive connection on the face of the metal substrate which has the dielectric coating thereon. In any case, the IC chip is electrically connected to the chip mounting pads either by the solder ball or wire bond connections.

Abstract: A pinning process including the steps of gold-plating through-holes in a laminate carrier and crimping a gold or gold-plated pin located in the through-holes to form a pin head on the top and a pin bulge on the bottom of the laminate carrier to produce a plastic pin grid array. A variety of mechanical forming processes may be employed to form the pin heads and pin bulges and cause the pin to at least partially, and preferably substantially, fill and contact the gold-plated through-hole including swage pinning, impact pinning, and double-die pinning operations. By combining the steps of gold-plating through-holes of a laminate carrier and using a mechanical pinning process to crimp a gold or gold-plated pin in the through-holes, a reliable mechanical and electrical connection may be established between the pin and the metal lines both inside and on the surface of the laminate carrier without the need for lead-containing solders and pastes.