Abstract: A process for forming a nanoporous dielectric coating on a substrate. The process includes forming a substantially uniform alkoxysilane gel composition on a surface of a substrate, which alkoxysilane gel composition comprises a combination of at least one alkoxysilane, an organic solvent composition, water, and an optional base catalyst; heating the substrate for a sufficient time and at a sufficient temperature in an organic solvent vapor atmosphere to thereby condense the gel composition; and then curing the gel composition to form a nanoporous dielectric coating having high mechanical strength on the substrate.

Abstract: A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

Abstract: The present invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. A precursor of an alkoxysilane, and low and high volatility solvents are mixed at a pH of about 2-5, raised to a pH of about 8 or above with a low volatility base and deposited on a semiconductor substrate. After exposure to atmospheric moisture, a nanoporous dielectric film is produced on the substrate.

Abstract: The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

Abstract: The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.

Abstract: The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

Abstract: Improved processes for forming hydrophobic nanoporous dielectric coatings on substrates are provided. The improved processes involve forming a reaction mixture that combines at least one mono-, di- or trifunctional precursor with at least one tetrafunctional precursor, recovering the reaction product, and then depositing the reaction product onto a suitable substrate, followed by gelling of the deposited film. Precursors include alkoxy, acetoxy and halogen leaving groups.

Abstract: Improved processes for forming hydrophobic nanoporous dielectric coatings on substrates are provided. The improved processes involve forming a reaction mixture that combines at least one mono-, di- or trifunctional precursor with at least one tetrafunctional precursor, recovering the reaction product, and then depositing the reaction product onto a suitable substrate, followed by gelling of the deposited film. Precursors include alkoxy, acetoxy and halogen leaving groups.

Abstract: A structure that is suitable for partial or full use in a spacer of a flat-panel display. The structure may be formed with a porous body having a face along which multiple primary pores extend into the porous body. A coating consisting primarily of carbon and having a highly uniform thickness overlies the porous body's face, extending along the primary pores to coat their surfaces and converting the primary pores into further pores. The coating can be created by removing non-carbon material from carbon-containing species provided along the pores. A solid porous film whose thickness is normally no more than 20 &mgr;m has a resistivity of 108-1014 ohm-cm. A spacer for a flat-panel display contains a support body and an overlying, normally porous, layer whose resistivity is greater parallel to a face of the support body than perpendicular to the body's face.

Abstract: The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

Abstract: Disclosed are processes for producing gel composition which may be utilized to produce low density gel compositions without the need for supercritical drying, thermal treatment or surface treatment. The processes comprise drying a wet gel comprising gel solids and a drying agent to remove the drying agent while minimizing shrinkage of the gel during drying.

Abstract: A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

Abstract: Processes for producing gel compositions comprising: esterifying a portion of the surface of a gel composition sufficient to produce a gel composition having a rod density of less than or equal to 0.15 g/cc, and/or a tap density of less than or equal to 0.2 g/cc through contact with at least one esterification agent and at least one catalyst. The processes may be utilized to produce low density gel compositions without the need for a supercritical drying step or thermal treatment.

Abstract: The present invention provides a method of treating silica wherein silica is reacted with a di- or tri-functional organosilane in an aqueous acid medium to provide a crude organosilane-capped silica product containing organosilicon impurities. The organosilicon impurities are extracted from the crude product with an organic liquid to provide a purified product consisting essentially of organosilane-capped silica. The purified product is dried to provide a dry organosilane-capped silica. The aqueous acid medium can include a displacing reagent which displaces at least one reactive functional group of the di- or tri-functional organosilane. The present invention further provides-continuous methods of treating silica with di- and tri-functional organosilanes, wherein the organic liquid and/or the organosilicon impurities are recycled and reused.

Abstract: The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising a e C.sub.1 to C.sub.4 alkylether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.0084 mole/cm.sup.3 or less, a boiling point of about 175.degree. C. or more at atmospheric pressure and a weight average molecular weight of about 120 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

Abstract: The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising an ether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.021 mole/cm.sup.3 or less, a boiling point of about 175 .degree. C. or more at atmospheric pressure and a weight average molecular weight of about 100 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

Abstract: A for producing metal oxide and/or organo-metal oxide compositions from metal oxide and organo-metal oxide precursors utilizing a rate modifying drying agent. The process allows metal oxide and/or organo-metal oxide compositions to be produced from a wide variety of metal oxide and organo-metal oxide precursors including metal halides and organometallic halides.

Abstract: A process for forming a nanoporous dielectric coating on a substrate. The process follows the steps of blending an alkoxysilane with a solvent composition and optional water; depositing the mixture onto a substrate while evaporating at least a portion of the solvent composition; placing the substrate in a sealed chamber and evacuating the chamber to a pressure below atmospheric pressure; exposing the substrate to water vapor at a pressure below atmospheric pressure and then exposing the substrate to base vapor.

Abstract: A process for producing surface modified metal oxide and/or organo-metal oxide compositions comprising esterifying at least a portion of the metal oxide and/or organo-metal oxide composition through contact with at least one esterification agent and at least one catalyst wherein the esterification agent and the catalyst are in the liquid phase. The process may be utilized to produce hydrophobic metal oxide and/or organo-metal oxide compositions at ambient temperature and/or ambient pressure conditions.

Abstract: A method is presented for obtaining borehole measurements using measurement-while-drilling apparatus wherein mud pulse telemetry signals are decoded from the annulus pressure signals (as opposed to the standpipe pressure signals). The data bearing signals are enhanced by combining the annulus pressure signals and standpipe pressure signals using addition, multiplication or correlation techniques.