Abstract: A light assembly can have an array of light sources forming rows and columns, where the array comprises a plurality of chips, and each chip comprises a subarray of light sources forming the rows and columns. A boundary between chips in the array can be configured to extend diagonally across rows and columns of the array such that, for each column across which the boundary extends, the first row of the plurality rows may not have a light source disposed in the respective column, but a second row of the plurality of rows has a light source disposed in the respective column.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: A light assembly can have an array of light sources forming rows and columns, where the array comprises a plurality of chips, and each chip comprises a subarray of light sources forming the rows and columns. A boundary between chips in the array can be configured to extend diagonally across rows and columns of the array such that, for each column across which the boundary extends, the first row of the plurality rows may not have a light source disposed in the respective column, but a second row of the plurality of rows has a light source disposed in the respective column.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described a low power consumption high brightness display. More particularly, there is described an integrated LED micro-display and a method of manufacturing the integrated LED micro-display.

Abstract: There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaNand modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.