Abstract: Exemplary semiconductor processing methods may include performing a pre-treatment on a substrate housed within a processing region of a semiconductor processing chamber. The substrate may include a layer of silicon-and-carbon-containing material. The pre-treatment may remove native oxide or residue from a surface of the layer of silicon-and-carbon-containing material. The methods may include providing a silicon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the silicon-containing precursor. The contacting may deposit a layer of silicon-containing material on the layer of silicon-and-carbon-containing material. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the oxygen-containing precursor.

Abstract: A silicon carbide transistor may be formed with a channel that includes a p-doped region between n-doped source and drain regions. A counter-doped region may be formed at the top of the channel directly underneath the gate oxide. Instead of using the conventional doping levels for the p-doped region, the doping concentration may be increase to be greater than about 1e18 cm3. The transistor may also include pocket regions on one or both sides of the channel. The pocket regions may be formed in the counter-doped region and may extend up to the gate oxide. These improvements individually and/or in combination may increase the current in the channel of the transistor without significantly increasing the threshold voltage beyond acceptable operating limits.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: The present invention provides a movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present disclosure provides a movable load bearing structure having a light weight core covered with at least one polymeric sheet for improving its loading bearing strength. The movable load bearing structure includes indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The movable structure may be in the form of a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Certain exemplary embodiments can provide a system, which can comprise a thermocouple input module. The thermocouple input module can be adapted to determine one or more calibration factors. The thermocouple input module can be adapted to store the calibration factors. The thermocouple input module can be adapted to apply the calibration factors to an incoming thermocouple voltage value to obtain an adjusted thermocouple voltage value.

Abstract: Certain exemplary embodiments can provide a system, which can comprise a thermocouple input module. The thermocouple input module can be adapted to determine one or more calibration factors. The thermocouple input module can be adapted to store the calibration factors. The thermocouple input module can be adapted to apply the calibration factors to an incoming thermocouple voltage value to obtain an adjusted thermocouple voltage value.

Abstract: Certain exemplary embodiments of the present invention provide a control system device, comprising a multiple channel discrete output module, said module storing a plurality of fail-state parameters, each fail-state parameter from the plurality of fail-state parameters corresponding to one channel of the multiple channels. Certain exemplary embodiments of the present invention provide a method for controlling the operation of each of a plurality of channels coupled to a discrete output module upon failure or shutdown of a control system coupled to the discrete output module, comprising, for each of the plurality of channels, storing a predetermined value for a fail-state parameter in a multi-channel discrete output module adapted to control the channel; and upon detecting a control system failure or shutdown, causing the channel to operate in a mode corresponding to the stored value for the channel's fail-state parameter.

Abstract: Methods for enhancing expression levels and secretion of heterologous fusion proteins in a host cell are disclosed.