Abstract: A silicon carbide transistor may be formed with a channel that includes a p-doped region between n-doped source and drain regions. A counter-doped region may be formed at the top of the channel directly underneath the gate oxide. Instead of using the conventional doping levels for the p-doped region, the doping concentration may be increase to be greater than about 1e18 cm3. The transistor may also include pocket regions on one or both sides of the channel. The pocket regions may be formed in the counter-doped region and may extend up to the gate oxide. These improvements individually and/or in combination may increase the current in the channel of the transistor without significantly increasing the threshold voltage beyond acceptable operating limits.

Abstract: A method for processing a substrate for hybrid bonding that includes doping an aluminum oxide (Al2O3) layer prior to bonding of the substrate. A method may include forming an aluminum oxide layer with a metal dopant to form a doped aluminum oxide layer on the substrate where the doped aluminum oxide forms a bonding layer for a hybrid bonding process on an uppermost surface of the substrate. A metal contact is formed on the substrate that penetrates through the doped aluminum oxide layer and a chemical mechanical polish (CMP) process is performed to recess an uppermost surface of the metal contact below a surface of the doped aluminum oxide layer.

Abstract: A method for substrate processing for hybrid bonding that includes forming an aluminum oxide crystallization barrier on a metal contact. In some embodiments, the method may include providing a substrate in preparation for a hybrid bonding process where the substrate has an aluminum oxide (Al2O3) bonding layer on an uppermost surface of the substrate and a metal contact is present in the aluminum oxide bonding layer. A crystallization barrier is formed on an uppermost surface of the metal contact. The crystallization barrier disrupts crystallization of the aluminum oxide bonding layer caused by interaction of the aluminum oxide material of the aluminum oxide bonding layer and a metal material of the metal contact during a subsequent annealing process of the hybrid bonding process.

Abstract: A method for preparing a substrate for hybrid bonding by forming an isolation barrier around metal contacts on the substrate to separate the metal contacts from an aluminum oxide (Al2O3) bonding layer prior to performing the hybrid bonding process. A method may include forming an aluminum oxide layer on the substrate as a bonding layer for a hybrid bonding process where the aluminum oxide layer is formed on a dielectric material on the substrate that is different from a material of the aluminum oxide layer, forming a metal contact on the substrate that penetrates through the aluminum oxide layer, and forming an isolation barrier around the metal contact where the isolation barrier prevents adjacent portions of the aluminum oxide layer next to the metal contact from completely covering an uppermost bonding surface of the metal contact during an annealing process of the hybrid bonding process.

Abstract: Exemplary semiconductor processing methods may include performing a pre-treatment on a substrate housed within a processing region of a semiconductor processing chamber. The substrate may include a layer of silicon-and-carbon-containing material. The pre-treatment may remove native oxide or residue from a surface of the layer of silicon-and-carbon-containing material. The methods may include providing a silicon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the silicon-containing precursor. The contacting may deposit a layer of silicon-containing material on the layer of silicon-and-carbon-containing material. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the oxygen-containing precursor.

Abstract: A silicon carbide transistor may be formed with a channel that includes a p-doped region between n-doped source and drain regions. A counter-doped region may be formed at the top of the channel directly underneath the gate oxide. Instead of using the conventional doping levels for the p-doped region, the doping concentration may be increase to be greater than about 1e18 cm3. The transistor may also include pocket regions on one or both sides of the channel. The pocket regions may be formed in the counter-doped region and may extend up to the gate oxide. These improvements individually and/or in combination may increase the current in the channel of the transistor without significantly increasing the threshold voltage beyond acceptable operating limits.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: The present invention provides a movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present disclosure provides a movable load bearing structure having a light weight core covered with at least one polymeric sheet for improving its loading bearing strength. The movable load bearing structure includes indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The movable structure may be in the form of a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a thinner, movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structures also includes roughened side edges for improving the strength of the edges. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: The present invention provides a movable load bearing structure having indentations, grooves, valleys, channels or other similar depressions on its underside. These depressions are mated with corresponding features for improved loading bearing capabilities. The load bearing structure may be a dunnage platform or a container for storing and/or shipping cargo.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.