Abstract: The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

Abstract: The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

Abstract: The present invention relates to resist compostions, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.

Abstract: The present invention relates to resist compostions, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.

Abstract: The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

Abstract: The present invention relates to a resist composition, especially for use in the production of electronic components via electron beam lithography. In addition to the usual base polymeric component (resist polymer), a secondary electron generator is included in resist compositions of the invention in order to promote secondary electron generation. This unique combination of components increases the exposure sensitivity of resists in a controlled fashion which facilitates the effective production of high-resolution patterned substrates (and consequential electronic components), but at much higher write speeds.

Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimizes scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

Abstract: The present invention relates to an imagable specimen sample, particularly an imagable histological sample for imaging via techniques such as scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The invention provides imaging preparation compositions, such as resin compositions, which can be embedded within a specimen sample and can also encapsulate the sample. The compositions contain either or both of a secondary electron generator and/or a self-healing component. The secondary electron generator enhances image quality by increasing the amount of secondary electron scattering. The self-healing component minimises specimen sample damage caused by the imaging technique.

Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.

Abstract: Semiconducting films are formed on a substrate by coating the substrate with a mixture of a semiconducting material and a substance which results in a Tg of the resulting mixture which is lower than that of the said material, and cross-linking the said material. Multilayer electronic devices may be produced by processes which comprise forming a cross-linked semiconducting film on a substrate in this way and forming a layer on the said film by solution or suspension deposition of a second film forming material in which the cross-linked semiconducting film is substantially insoluble in the solvent or suspending agent used in forming the second film. The invention may be used in making, for example, field effect transistors, light emitting diodes (LEDs), organic solar cells and organic lasers.

Abstract: A process is provided for preparing a modified particulate solid comprising reacting a poly vinyl dispersant with a compound in the presence of a particulate solid and a liquid medium, characterised in that: a) the poly vinyl dispersant has a calculated Log P of less than 1.8 and at least one reactable group; and b) the compound is substantially soluble in the liquid medium and has at least one reactive group which is reactive towards the reactable group(s) of the dispersant. The process prepares modified particulate solids which demonstrate good dispersion stability and small particle size.

Abstract: A process for preparing a modified particulate solid comprising reacting a dispersant with a compound in the presence of a particulate solid and a liquid medium, characterised in that: a) the dispersant has at least one reactable group selected from keto, aldehyde and beta-diketoester groups, b) the compound has at least two groups reactive towards said keto, aldehyde and/or beta-diketoester groups. The process provides a modified particulate solid having improved stability which is particularly useful for liquid vehicles having and range of polarities and for incorporation into ink jet printing inks.

Abstract: The present invention relates to solutions of organic semiconductors and their use in the production of electronic components.

Abstract: This invention relates to organic light emitting diodes (OLEDs) and to methods for their manufacture. The invention provides an OLED element or display which enables contrast to be produced in an image. In accordance with the invention a layer of ink is patterned as a blocking layer between two OLED layers. The ink reduces or prevents conduction, i.e. movement of charge, between the two OLED layers in that area of the device. The ink may be dark in colour, e.g. black, to increase the contrast ratio of the OLED. The blocking layer is provided between any two layers in the OLED and blocks the charge movement in these areas. The blocking layer may comprise a multiplicity of ink dots, the density of which determines the extent to which conduction is hindered. The blocking layer may be produced as a “grey-scale” pattern wherein the density of dots is varied across the pattern.

Abstract: A method for forming an organic electronic device, which method comprises the steps of: a) forming a negative image of a desired pattern on a substrate or device layer with a lift-off ink; b) coating a first device layer to be patterned on top of the negative image; c) coating one or more further device layers to be patterned on top of the first device layer to be patterned; and d) removing the lift-off ink and unwanted portions of the device layers above it, thereby leaving the desired pattern of device layers. The method allows the formation of a device structure wherein the device layers to be patterned are self-aligned. The method enables a multiplicity of layers to be patterned in a single set of printing and lift-off steps using one pattern which ensures the excellent vertical alignment of edges, which would be difficult to achieve by direct printing. Horizontal alignment can also be achieved. The size of the device features can be reduced below the actual printing resolution.

Abstract: An ink-jet printing process comprising the steps (a) and (b) in any order or simultaneously: (a) applying an ink to a substrate by means of an ink-jet printer to form an image on a substrate; and (b) applying to the substrate a fixing composition comprising a liquid medium and a polymer containing a plurality of monoguanide and/or biguanide groups by means of an ink jet printer; characterised in that in the fixing composition has a chloride concentration less than 400 ppm by weight.

Abstract: A method for preparing a conjugated molecule comprising a first monomer coupled to a second monomer, said method comprising: (i) linking the first monomer to a solid support via the germanium atom of a germyl linking group; (ii) coupling the first monomer to the second monomer in a coupling position to form a bound conjugated molecule, wherein the second monomer has a protecting group in a non-coupling position; (iii) optionally sequentially coupling a third, fourth . . . and nth monomer to the second, third and (n?1)th monomer respectively; (iv) removing the protecting group; and (v) ipso-degermylation to release the bound conjugated molecule.

Abstract: The present invention relates to an electron beam (eBeam) resist composition, particularly an (eBeam) resist composition for use in the fabrication of integrated circuits. Such resist compositions include an anti-scattering compound which minimises scattering and secondary electron generation, thus affording extremely high resolution lithography. Such high resolution lithography may be used directly upon silicon-based substrates to produce integrated circuits, or may alternatively be used to produce a lithographic mask (e.g. photomask) to facilitate high-resolution lithography.