Patents by Inventor Steve A. Kramer
Steve A. Kramer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20100313907Abstract: Methods and apparatus are provided for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing a composition of magnetic particles dispersed within a base fluid to remove contaminants from the surface of the substrate.Type: ApplicationFiled: June 12, 2009Publication date: December 16, 2010Inventors: Nishant Sinha, Steve Kramer, Gurtej Sandhu
-
Publication number: 20100221920Abstract: Methods are disclosed, such as those involving increasing the density of isolated features in an integrated circuit. Also disclosed are structures associated with the methods. In one or more embodiments, contacts are formed on pitch with other structures, such as conductive interconnects. The interconnects may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. The features in the selectively definable material are trimmed to desired dimensions. Spacer material is blanket deposited over the features in the selectively definable material and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed to leave a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts.Type: ApplicationFiled: May 17, 2010Publication date: September 2, 2010Applicant: MICRON TECHNOLOGY, INC.Inventors: Gurtej Sandhu, Mark Kiehlbauch, Steve Kramer, John Smythe
-
Publication number: 20100190114Abstract: A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer.Type: ApplicationFiled: April 9, 2010Publication date: July 29, 2010Applicant: Micron Technology, Inc.Inventors: Gurtej S. Sandhu, Steve Kramer
-
Patent number: 7737039Abstract: Methods are disclosed, such as those involving increasing the density of isolated features in an integrated circuit. Also disclosed are structures associated with the methods. In one or more embodiments, contacts are formed on pitch with other structures, such as conductive interconnects. The interconnects may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. The features in the selectively definable material are trimmed to desired dimensions. Spacer material is blanket deposited over the features in the selectively definable material and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed to leave a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts.Type: GrantFiled: November 1, 2007Date of Patent: June 15, 2010Assignee: Micron Technology, Inc.Inventors: Gurtej Sandhu, Mark Kiehlbauch, Steve Kramer, John Smythe
-
Patent number: 7723009Abstract: A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer.Type: GrantFiled: June 2, 2006Date of Patent: May 25, 2010Assignee: Micron Technology, Inc.Inventors: Gurtej S. Sandhu, Steve Kramer
-
Publication number: 20100080048Abstract: A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.Type: ApplicationFiled: September 30, 2008Publication date: April 1, 2010Applicant: MICRON TECHNOLOGY, INC.Inventors: Jun Liu, Steve Kramer, Gurtej Sandhu
-
Publication number: 20090291556Abstract: A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.Type: ApplicationFiled: July 31, 2009Publication date: November 26, 2009Applicant: MICRON TECHNOLOGY, INC.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 7582561Abstract: A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.Type: GrantFiled: September 1, 2005Date of Patent: September 1, 2009Assignees: Micron Technology, Inc., Idaho Research Foundation, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20090115064Abstract: Methods are disclosed, such as those involving increasing the density of isolated features in an integrated circuit. Also disclosed are structures associated with the methods. In one or more embodiments, contacts are formed on pitch with other structures, such as conductive interconnects. The interconnects may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. The features in the selectively definable material are trimmed to desired dimensions. Spacer material is blanket deposited over the features in the selectively definable material and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed to leave a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts.Type: ApplicationFiled: November 1, 2007Publication date: May 7, 2009Applicant: MICRON TECHNOLOGY, INC.Inventors: Gurtej Sandhu, Mark Kiehlbauch, Steve Kramer, John Smythe
-
Publication number: 20090029435Abstract: In some embodiments, the present invention pertains to a method for conjugating a first compound to a second compound wherein the conjugation involves an electrophilic moiety. The method comprises reacting the first compound with the second compound to form a conjugate. The improvement in embodiments of the present invention comprises adding a nucleophilic reagent to the conjugate wherein the nucleophilic reagent forms a neutral product upon reaction with unreacted electrophilic moieties of the conjugate. In some embodiments, the nucleophilic reagent is substantially non-reactive with disulfide bonds in the event that the conjugate comprises disulfide bonds. The conjugate formed is doubly deactivated because the other moiety for linking to the electrophilic moiety is also deactivated.Type: ApplicationFiled: September 30, 2008Publication date: January 29, 2009Applicant: Siemens Healthcare Diagnostics Inc.Inventors: Alan R. Craig, Steve Kramer, Ashok Koul
-
Patent number: 7456000Abstract: In some embodiments, the present invention pertains to a method for conjugating a first compound to a second compound wherein the conjugation involves an electrophilic moiety. The method comprises reacting the first compound with the second compound to form a conjugate. The improvement in embodiments of the present invention comprises adding a nucleophilic reagent to the conjugate wherein the nucleophilic reagent forms a neutral product upon reaction with unreacted electrophilic moieties of the conjugate. In some embodiments, the nucleophilic reagent is substantially non-reactive with disulfide bonds in the event that the conjugate comprises disulfide bonds. The conjugate formed is doubly deactivated because the other moiety for linking to the electrophilic moiety is also deactivated.Type: GrantFiled: August 5, 2005Date of Patent: November 25, 2008Assignee: Siemens Healthcare Diagnostics Inc.Inventors: Alan R. Craig, Steve Kramer, Ashok Koul
-
Patent number: 7423345Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: GrantFiled: October 25, 2002Date of Patent: September 9, 2008Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 7400043Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: GrantFiled: March 16, 2006Date of Patent: July 15, 2008Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20080136028Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: ApplicationFiled: October 25, 2002Publication date: June 12, 2008Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Patent number: 7341947Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: GrantFiled: May 25, 2004Date of Patent: March 11, 2008Assignee: Micron Technology, Inc.Inventors: Chien M. Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20070281220Abstract: A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer.Type: ApplicationFiled: June 2, 2006Publication date: December 6, 2007Inventors: Gurtej S. Sandhu, Steve Kramer
-
Publication number: 20070190781Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: ApplicationFiled: May 25, 2004Publication date: August 16, 2007Inventors: Chien Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20070049019Abstract: A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for the supercritical fluid to swell the polymer and for the at least one reactant to penetrate the polymer film. The reactant is reacted to cause the deposition of the material on at least a portion of the substrate. The substrate is removed from the supercritical fluid, and the polymer film is removed. The process permits the precise deposition of materials without the need for removal of excess material using chemical, physical, or a combination of chemical and physical removal techniques.Type: ApplicationFiled: September 1, 2005Publication date: March 1, 2007Inventors: Chien Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20060157860Abstract: The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.Type: ApplicationFiled: March 16, 2006Publication date: July 20, 2006Inventors: Chien Wai, Hiroyuki Ohde, Steve Kramer
-
Publication number: 20060046290Abstract: In some embodiments, the present invention pertains to a method for conjugating a first compound to a second compound wherein the conjugation involves an electrophilic moiety. The method comprises reacting the first compound with the second compound to form a conjugate. The improvement in embodiments of the present invention comprises adding a nucleophilic reagent to the conjugate wherein the nucleophilic reagent forms a neutral product upon reaction with unreacted electrophilic moieties of the conjugate. In some embodiments, the nucleophilic reagent is substantially non-reactive with disulfide bonds in the event that the conjugate comprises disulfide bonds. The conjugate formed is doubly deactivated because the other moiety for linking to the electrophilic moiety is also deactivated.Type: ApplicationFiled: August 4, 2005Publication date: March 2, 2006Inventors: Alan Craig, Steve Kramer, Ashok Koul