Abstract: A power pack for providing power electronics at high temperature with high dI/dt, current, and voltage capability. The power pack having three layers. A top layer for providing: a matching composite Coefficient of Thermal Expansion (CTE) between power device materials and power electrodes, thermal cooling, and electrical conduction paths. The top layer may have interface circuitry for driving and controlling on-board power semiconductor devices. The top layer may also include traces and pads for the attachment of a gate, a gate return, and terminals. A middle layer may be a power semiconductor device providing control of the current flow. The bottom layer may be a rigid base plate for providing structural rigidity or may provide an electric and thermal path for the power semiconductor device. The power pack also includes a thermal shim which provides a thermal path to dissipate heat generated by the interface circuitry. The power pack may also include a snubber circuit.