Patents by Inventor Steve Badcock

Steve Badcock has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor diode assembly
    Patent number: 9385242
    Abstract: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: July 5, 2016
    Assignee: Diodes Incorporated
    Inventors: John Earnshaw, Wolfgang Kemper, Yen-Li Lin, Steve Badcock, Mark French
  • SEMICONDUCTOR DIODE ASSEMBLY
    Publication number: 20150206985
    Abstract: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.
    Type: Application
    Filed: March 30, 2015
    Publication date: July 23, 2015
    Applicant: DIODES INCORPORATED
    Inventors: John Earnshaw, Wolfgang Kemper, Yen-Yi Lin, Steve Badcock, Mark French
  • Semiconductor diode assembly
    Patent number: 9048106
    Abstract: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: June 2, 2015
    Assignee: Diodes Incorporated
    Inventors: John Earnshaw, Wofgang Kemper, Yen-Yi Lin, Steve Badcock, Mark French
  • SEMICONDUCTOR DIODE ASSEMBLY
    Publication number: 20140167204
    Abstract: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.
    Type: Application
    Filed: December 13, 2012
    Publication date: June 19, 2014
    Applicant: DIODES INCORPORATED
    Inventors: John Earnshaw, Wofgang Kemper, Yen-Yi Lin, Steve Badcock, Mark French