Patents by Inventor Steve Burgess
Steve Burgess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240140665Abstract: A container comprises: (i) a hydrogen generating means comprising an active material arranged to generate molecular hydrogen on reaction with moisture; (ii) a catalyst capable of catalyzing a reaction between molecular hydrogen and molecular oxygen; and (iii) a barrier means for restricting passage of small organic molecules from a product contained, in use, in the container, to the catalyst associated with a closure or body wall of the container.Type: ApplicationFiled: December 17, 2021Publication date: May 2, 2024Inventors: MARK RULE, Heather BURIK, Alan BARCON, Andrew ELKIN, Adrian CHRMICHAEL, Steve Burgess TATTUM
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Patent number: 11961722Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.Type: GrantFiled: December 4, 2022Date of Patent: April 16, 2024Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Anthony Wilby, Steve Burgess, Ian Moncrieff, Clive Widdicks, Scott Haymore, Rhonda Hyndman
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Patent number: 11913109Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.Type: GrantFiled: August 15, 2019Date of Patent: February 27, 2024Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Tony Wilby, Steve Burgess, Adrian Thomas, Rhonda Hyndman, Scott Haymore, Clive Widdicks, Ian Moncrieff
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Publication number: 20240014018Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.Type: ApplicationFiled: September 24, 2023Publication date: January 11, 2024Inventors: Tony WILBY, Steve BURGESS, Adrian THOMAS, Rhonda HYNDMAN, Scott HAYMORE, Clive WIDDICKS, Ian MONCRIEFF
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Patent number: 11718908Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.Type: GrantFiled: April 27, 2021Date of Patent: August 8, 2023Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Scott Haymore, Amit Rastogi, Rhonda Hyndman, Steve Burgess, Ian Moncrieff
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Publication number: 20230094699Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.Type: ApplicationFiled: December 4, 2022Publication date: March 30, 2023Inventors: Anthony WILBY, Steve Burgess, Ian Moncrieff, Clive Widdicks, Scott Haymore, Rhonda Hyndman
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Patent number: 11521840Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.Type: GrantFiled: February 20, 2018Date of Patent: December 6, 2022Assignee: SPTS Technologies LimitedInventors: Anthony Wilby, Steve Burgess, Ian Moncrieff, Clive Widdicks, Scott Haymore, Rhonda Hyndman
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Patent number: 11361975Abstract: A method of fabricating an integrated circuit is disclosed. The method of removing excess metal of a metal interconnection layer during integrated circuit fabrication process comprises the steps of: plasma etching an excess metal portion of the metal interconnection layer using plasma comprising a noble gas, for an etch duration. The method further comprises stopping the etch process prior to the excess metal portion being completely removed and thus prior to a dielectric surface upon which the metal interconnection is formed, becoming completely exposed. The remaining excess metal portion comprising excess metal residues is subsequently removed using a second etch step.Type: GrantFiled: October 14, 2019Date of Patent: June 14, 2022Assignee: SPTS Technologies LimitedInventors: Tony Wilby, Steve Burgess
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Patent number: 11251037Abstract: A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N2) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.Type: GrantFiled: August 15, 2019Date of Patent: February 15, 2022Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Kathrine Crook, Steve Burgess
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Publication number: 20210317565Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.Type: ApplicationFiled: March 9, 2021Publication date: October 14, 2021Inventors: Scott Haymore, Adrian Thomas, Steve Burgess
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Publication number: 20210246545Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.Type: ApplicationFiled: April 27, 2021Publication date: August 12, 2021Inventors: SCOTT HAYMORE, AMIT RASTOGI, RHONDA HYNDMAN, STEVE BURGESS, IAN MONCRIEFF
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Patent number: 11008651Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.Type: GrantFiled: April 4, 2017Date of Patent: May 18, 2021Assignee: SPTS TECHNOLOGIES LIMITEDInventors: Scott Haymore, Amit Rastogi, Rhonda Hyndman, Steve Burgess, Ian Moncrieff, Chris Kendal
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Patent number: 10978291Abstract: The invention relates to a method of pre-cleaning a semiconductor structure and to associated modular semiconductor process tools. The method includes the steps of: (i) providing a semiconductor structure having an exposed dielectric layer of an organic dielectric material, wherein the dielectric layer has one or more features formed therein which expose one or more electrically conductive structures to be pre-cleaned, in which the electrically conductive structures each include a metal layer, optionally with a barrier layer formed thereon, and the surface area of the exposed dielectric layer is greater than the surface area of the electrically conductive structures exposed by the dielectric layer; and (ii) pre-cleaning the semiconductor structure by performing an Ar/H2 sputter etch to remove material from the exposed electrically conductive structures and to remove organic dielectric material from the exposed dielectric layer.Type: GrantFiled: September 11, 2014Date of Patent: April 13, 2021Assignee: SPTS Technologies LimitedInventors: Alex Theodosiou, Steve Burgess
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Publication number: 20210005439Abstract: A magnetron sputtering apparatus for depositing material onto a substrate, comprises: a chamber comprising a substrate support and a target; a plasma production device configured to produce a plasma within the chamber suitable for sputtering material from the target onto the substrate; and a thermally conductive grid comprising a plurality of cells. Each cell comprises an aperture and the ratio of the height of the cells to the width of the apertures is less than 1.0. The grid is disposed between the substrate support and the target and is substantially parallel to the target. The upper surface of the substrate support is positioned at a distance of 75 mm or less from the lower surface of the target.Type: ApplicationFiled: July 1, 2020Publication date: January 7, 2021Inventors: Rhonda Hyndman, Steve Burgess
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Publication number: 20200365794Abstract: In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.Type: ApplicationFiled: May 1, 2020Publication date: November 19, 2020Inventors: Adrian Thomas, Steve Burgess, Amit Rastogi, Tony Wilby, Scott Haymore
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Patent number: 10812035Abstract: A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (Ra) of 11 angstroms or less.Type: GrantFiled: September 12, 2018Date of Patent: October 20, 2020Assignee: SPTS Technologies LimitedInventors: Rhonda Hyndman, Steve Burgess
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Publication number: 20200135490Abstract: A method of fabricating an integrated circuit is disclosed. The method of removing excess metal of a metal interconnection layer during integrated circuit fabrication process comprises the steps of: plasma etching an excess metal portion of the metal interconnection layer using plasma comprising a noble gas, for an etch duration. The method further comprises stopping the etch process prior to the excess metal portion being completely removed and thus prior to a dielectric surface upon which the metal interconnection is formed, becoming completely exposed. The remaining excess metal portion comprising excess metal residues is subsequently removed using a second etch step.Type: ApplicationFiled: October 14, 2019Publication date: April 30, 2020Inventors: TONY WILBY, STEVE BURGESS
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Publication number: 20200090913Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.Type: ApplicationFiled: August 15, 2019Publication date: March 19, 2020Inventors: TONY WILBY, STEVE BURGESS, ADRIAN THOMAS, RHONDA HYNDMAN, SCOTT HAYMORE, VLIVE WIDDICKS, IAN MONCRIEFF
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Publication number: 20200058498Abstract: A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N2) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.Type: ApplicationFiled: August 15, 2019Publication date: February 20, 2020Inventors: Katherine Crook, Steve Burgess
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Publication number: 20190267962Abstract: A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (Ra) of 11 angstroms or less.Type: ApplicationFiled: September 12, 2018Publication date: August 29, 2019Inventors: RHONDA HYNDMAN, STEVE BURGESS