Patents by Inventor Steve Cummings

Steve Cummings has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100144107
    Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.
    Type: Application
    Filed: February 10, 2010
    Publication date: June 10, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Gordon Haller, Sanh Dang Tang, Steve Cummings
  • Patent number: 7696567
    Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: April 13, 2010
    Assignee: Micron Technology, Inc
    Inventors: Gordon Haller, Sanh Dang Tang, Steve Cummings
  • Publication number: 20090070369
    Abstract: Systems and methods for searching entertainment content on a computer jukebox are provided in which, in exemplary embodiments, a user may select which music library to search if more than one music libraries are available for searching. Also provided is a system and method of searching entertainment content on a computer jukebox in which, in one embodiment, search results from a first music library are provided based on a input search criteria, and search results are provided from a second music library based on the same search criteria in response to only a single action performed by a user.
    Type: Application
    Filed: September 10, 2007
    Publication date: March 12, 2009
    Inventors: Jeffrey J. Kalis, Jeff Martin, Sterling Heibeck, Steve Cummings
  • Publication number: 20070051997
    Abstract: A memory device comprising a vertical transistor includes a digit line that is directly coupled to the source regions of each memory cell. Because an electrical plug is not used to form a contact between the digit line and the source regions, a number of fabrication steps may be reduced and the possibility for manufacturing defects may also be reduced. In some embodiments, a memory device may include a vertical transistor having gate regions that are recessed from an upper portion of a silicon substrate. With the gate regions recessed from the silicon substrate, the gate regions are spaced further from the source/drain regions and, accordingly, cross capacitance between the gate regions and the source/drain regions may be reduced.
    Type: Application
    Filed: August 31, 2005
    Publication date: March 8, 2007
    Inventors: Gordon Haller, Sanh Tang, Steve Cummings
  • Patent number: 6940112
    Abstract: A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: September 6, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Howard E. Rhodes, Mark Visokay, Tom Graettinger, Dan Gealy, Gurtej Sandhu, Cem Basceri, Steve Cummings
  • Patent number: 6869877
    Abstract: A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: March 22, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Howard E. Rhodes, Mark Visokay, Tom Graettinger, Dan Gealy, Gurtej Sandhu, Cem Basceri, Steve Cummings
  • Publication number: 20030025142
    Abstract: A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
    Type: Application
    Filed: August 30, 2002
    Publication date: February 6, 2003
    Applicant: Micron Technology, Inc.
    Inventors: Howard E. Rhodes, Mark Visokay, Tom Graettinger, Dan Gealy, Gurtej Sandhu, Cem Basceri, Steve Cummings
  • Publication number: 20030003621
    Abstract: A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
    Type: Application
    Filed: August 30, 2002
    Publication date: January 2, 2003
    Applicant: Micron Technology, Inc.
    Inventors: Howard E. Rhodes, Mark Visokay, Tom Graettinger, Dan Gealy, Gurtej Sandhu, Cem Basceri, Steve Cummings
  • Patent number: 6492241
    Abstract: A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: December 10, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Howard E. Rhodes, Mark Visokay, Tom Graettinger, Dan Gealy, Gurtej Sandhu, Cem Basceri, Steve Cummings