Abstract: A method includes generating, external to a radio frequency (RF) environment and based on a process recipe, a first signal and a second signal. The method further includes converting the first signal into an alternative signal and transmitting, over a non-conductive communication link, the alternative signal to a converter within the RF environment within a processing chamber of a substrate processing system. The method further includes converting the alternative signal into a third signal by the converter inside the RF environment within the processing chamber. The method further includes controlling a first plurality of elements disposed within the RF environment within the processing chamber via one or more first devices disposed within the RF environment within the processing chamber using the third signal and controlling a second plurality of elements of the substrate processing system via one or more second devices of the substrate processing system using the second signal.

Abstract: A method includes generating, external to a radio frequency (RF) environment and based on a process recipe, a first signal and a second signal. The method further includes converting the first signal into an alternative signal and transmitting, over a non-conductive communication link, the alternative signal to a converter within the RF environment within a processing chamber of a substrate processing system. The method further includes converting the alternative signal into a third signal by the converter inside the RF environment within the processing chamber. The method further includes controlling a first plurality of elements disposed within the RF environment within the processing chamber via one or more first devices disposed within the RF environment within the processing chamber using the third signal and controlling a second plurality of elements of the substrate processing system via one or more second devices of the substrate processing system using the second signal.

Abstract: A heating system includes a first plurality of heating elements disposed within an electrostatic chuck and an electrically conductive housing. The heating system further includes one or more switching devices to control temperatures output by the first plurality of heating elements. The heating system further includes a converter that is electrically coupled to the one or more switching devices and disposed within the electrically conductive housing. The electrically conductive housing and the first plurality of heating elements are to operate in a radio frequency (RF) environment. A second plurality of elements are to operate outside of the RF environment. The converter is to communicate with a controller outside of the RF environment via a non-conductive communication link. The controller is to receive a process recipe and is to control the first plurality of heating elements and the second plurality of elements substantially simultaneously based on the process recipe.

Abstract: A method includes generating, based on a process recipe, a first electrical control signal by a processing device external to a particular radio frequency (RF) environment. The method further includes converting the first electrical control signal into an alternative control signal, transmitting the alternative control signal to a converter within the particular RF environment over a non-conductive communication link, and converting the alternative control signal into a second electrical control signal by the converter. The method further includes controlling a first plurality of elements via one or more switching devices using the second electrical control signal. The method further includes generating, based on the process recipe, a third signal by the processing device and controlling a second plurality of elements disposed outside of the RF environment using the third signal.

Abstract: A heating system includes a first plurality of heating elements disposed within an electrostatic chuck and an electrically conductive housing. The heating system further includes one or more switching devices to control temperatures output by the first plurality of heating elements. The heating system further includes a converter that is electrically coupled to the one or more switching devices and disposed within the electrically conductive housing. The electrically conductive housing and the first plurality of heating elements are to operate in a radio frequency (RF) environment. A second plurality of elements are to operate outside of the RF environment. The converter is to communicate with a controller outside of the RF environment via a non-conductive communication link. The controller is to receive a process recipe and is to control the first plurality of heating elements and the second plurality of elements substantially simultaneously based on the process recipe.

Abstract: A method includes generating, based on a process recipe, a first electrical control signal by a processing device external to a particular radio frequency (RF) environment. The method further includes converting the first electrical control signal into an alternative control signal, transmitting the alternative control signal to a converter within the particular RF environment over a non-conductive communication link, and converting the alternative control signal into a second electrical control signal by the converter. The method further includes controlling a first plurality of elements via one or more switching devices using the second electrical control signal. The method further includes generating, based on the process recipe, a third signal by the processing device and controlling a second plurality of elements disposed outside of the RF environment using the third signal.

Abstract: A system includes a plurality of elements that are to operate in a radio frequency (RF) environment. The system further includes a plurality of switching devices to operate in the RF environment, each of the plurality of switching devices to control power to at least one of the plurality of elements, wherein the plurality of switching devices are coupled to a power line that is to provide power from outside the RF environment. A filter is coupled to the power line to filter out RF noise introduced into the power line by the RF environment. The system further includes a converter, coupled to the one or more switching devices, to operate in the RF environment and to provide a non-conductive communication link between the one or more switching devices and a controller outside of the RF environment.

Abstract: A system includes a processing device to generate a command, the command having a first format that is transmissible over a conductive communication link. The system further includes a first converter, coupled to the processing device, to receive the command and convert the command into a second format that is transmissible over a non-conductive communication link. The system further includes a second converter, configured to operate in a destructive radio frequency (RF) environment, to receive the command and convert the command back to the format that is transmissible over a conductive communication link and to subsequently transmit the command to a pulse width modulation (PWM) circuit. The PWM circuit is coupled to the second converter and configured to operate in the destructive RF environment, to adjust a setting used to control one or more elements that are to operate in the destructive RF environment based on the command.

Abstract: A system includes a plurality of elements that are to operate in a radio frequency (RF) environment. The system further includes a plurality of switching devices to operate in the RF environment, each of the plurality of switching devices to control power to at least one of the plurality of elements, wherein the plurality of switching devices are coupled to a power line that is to provide power from outside the RF environment. A filter is coupled to the power line to filter out RF noise introduced into the power line by the RF environment. The system further includes a converter, coupled to the one or more switching devices, to operate in the RF environment and to provide a non-conductive communication link between the one or more switching devices and a controller outside of the RF environment.

Abstract: Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250° C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A “jet” of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode.

Abstract: Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020±250 Å/min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0±0.2 to 3.81±0.