Abstract: A system and method for providing overvoltage and overcurrent protection. The present teachings provide a method for protecting a component including the steps of: 1) connecting a first terminal of a normally open micro-electro-mechanical systems (MEMS) switch to a source of an input signal with respect to the component; 2) connecting a second terminal of the switch to an input to the component; and 3) connecting a third terminal of the switch to a source of control potential to activate the switch on the application of power thereto. In a most general embodiment, the invention provides an arrangement for protecting a component comprising a MEMS switch having a first terminal coupled to a source of an input signal; a second terminal coupled to said component; and a third terminal adapted to activate the switch on the application of control power thereto. In the best mode, the switch is normally open, the first terminal is a drain terminal, and the second terminal is coupled to a source of ground potential.

Abstract: A system and method for providing overvoltage and overcurrent protection. The present teachings provide a method for protecting a component including the steps of: 1) connecting a first terminal of a normally open micro-electro-mechanical systems (MEMS) switch to a source of an input signal with respect to the component; 2) connecting a second terminal of the switch to an input to the component; and 3) connecting a third terminal of the switch to a source of control potential to activate the switch on the application of power thereto. In a most general embodiment, the invention provides an arrangement for protecting a component comprising a MEMS switch having a first terminal coupled to a source of an input signal; a second terminal coupled to said component; and a third terminal adapted to activate the switch on the application of control power thereto. In the best mode, the switch is normally open, the first terminal is a drain terminal, and the second terminal is coupled to a source of ground potential.

Abstract: There is disclosed a method for modeling a switch FET. A three-dimensional model representing the structure of the switch FET may be created. The three-dimensional model may be analyzed using an electromagnetic field analysis tool.