Patents by Inventor Steve G. Ghanayem
Steve G. Ghanayem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11887855Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: GrantFiled: April 6, 2021Date of Patent: January 30, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Publication number: 20210225655Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: ApplicationFiled: April 6, 2021Publication date: July 22, 2021Applicant: Applied Materials, Inc.Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Patent number: 10985023Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: GrantFiled: March 17, 2017Date of Patent: April 20, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Patent number: 10429747Abstract: Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. The processor determines an order of treatment for the substrate based on the overlay error map. The order of treatment includes one or more treatment processes. The processor generates a process recipe for a treatment process of the one or more treatment processes in the order of treatment. The processor provides the process recipe to a substrate treatment apparatus.Type: GrantFiled: November 13, 2017Date of Patent: October 1, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Mangesh Bangar, Srinivas D. Nemani, Steve G. Ghanayem, Ellie Y. Yieh
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Publication number: 20180136569Abstract: Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. The processor determines an order of treatment for the substrate based on the overlay error map. The order of treatment includes one or more treatment processes. The processor generates a process recipe for a treatment process of the one or more treatment processes in the order of treatment. The processor provides the process recipe to a substrate treatment apparatus.Type: ApplicationFiled: November 13, 2017Publication date: May 17, 2018Inventors: Mangesh BANGAR, Srinivas D. NEMANI, Steve G. GHANAYEM, Ellie Y. YIEH
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Publication number: 20170194156Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: ApplicationFiled: March 17, 2017Publication date: July 6, 2017Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Patent number: 9601339Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: GrantFiled: December 10, 2015Date of Patent: March 21, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Publication number: 20160104624Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: ApplicationFiled: December 10, 2015Publication date: April 14, 2016Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Patent number: 9230815Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: GrantFiled: October 24, 2013Date of Patent: January 5, 2016Assignee: Appled Materials, Inc.Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Publication number: 20140120723Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.Type: ApplicationFiled: October 24, 2013Publication date: May 1, 2014Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
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Publication number: 20120210937Abstract: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput.Type: ApplicationFiled: April 27, 2012Publication date: August 23, 2012Applicant: Applied Materials, Inc.Inventors: RANDHIR THAKUR, STEVE G. GHANAYEM, JOSEPH YUDOVSKY, AARON WEBB, ADAM ALEXANDER BRAILOVE, NIR MERRY, VINAY K. SHAH, ANDREAS G. HEGEDUS
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Patent number: 7774887Abstract: A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.Type: GrantFiled: April 14, 2008Date of Patent: August 17, 2010Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Avi Tepman, Kenneth R. Reynolds, Younes Achkire, Dan A. Marohl, Steve G. Ghanayem, Alexander S. Polyak, Gary Ettinger, Haochuan Zhang, Hui Chen
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Publication number: 20100173495Abstract: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence.Type: ApplicationFiled: March 16, 2010Publication date: July 8, 2010Inventors: Randhir Thakur, Steve G. Ghanayem, Joseph Yudovsky, Aaron Webb, Adam Alexander Brailove, Nir Merry, Vinay K. Shah, Andreas G. Hegedus
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Patent number: 7601652Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.Type: GrantFiled: June 21, 2005Date of Patent: October 13, 2009Assignee: Applied Materials, Inc.Inventors: Kaushal K. Singh, Sean M. Seutter, Jacob Smith, R. Suryanarayanan Iyer, Steve G. Ghanayem, Adam Brailove, Robert Shydo, Jeannot Morin
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Publication number: 20080210258Abstract: A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.Type: ApplicationFiled: April 14, 2008Publication date: September 4, 2008Inventors: Joseph Yudovsky, Avi Tepman, Kenneth R. Reynolds, Younes Achkire, Dan A. Marohl, Steve G. Ghanayem, Alexander S. Polyak, Gary Ettinger, Haochuan Zhang, Hui Chen
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Patent number: 7377002Abstract: A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.Type: GrantFiled: October 28, 2004Date of Patent: May 27, 2008Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Avi Tepman, Kenneth R. Reynolds, Younes Achkire, Dan A. Marohl, Steve G. Ghanayem, Alexander S. Polyak, Gary Ettinger, Haochuan Zhang, Hui Chen
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Publication number: 20070259111Abstract: The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.Type: ApplicationFiled: August 11, 2006Publication date: November 8, 2007Inventors: Kaushal K. Singh, Maitreyee Mahajani, Steve G. Ghanayem, Joseph Yudovsky, Brendan McDougall
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Patent number: 6638810Abstract: The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme.Type: GrantFiled: November 5, 2001Date of Patent: October 28, 2003Assignee: Applied Materials, Inc.Inventors: Mouloud Bakli, Steve G. Ghanayem, Huyen T. Tran
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Patent number: 6602770Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.Type: GrantFiled: October 16, 2001Date of Patent: August 5, 2003Assignee: Applied Materials, Inc.Inventors: Sandeep A. Desai, Scott Brad Herner, Steve G. Ghanayem
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Publication number: 20030008501Abstract: The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme.Type: ApplicationFiled: November 5, 2001Publication date: January 9, 2003Applicant: Applied Materials, Inc.Inventors: Mouloud Bakli, Steve G. Ghanayem, Huyen T. Tran