Patents by Inventor Steve G. Ghanayem

Steve G. Ghanayem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210225655
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Application
    Filed: April 6, 2021
    Publication date: July 22, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Patent number: 10985023
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: April 20, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Patent number: 10429747
    Abstract: Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. The processor determines an order of treatment for the substrate based on the overlay error map. The order of treatment includes one or more treatment processes. The processor generates a process recipe for a treatment process of the one or more treatment processes in the order of treatment. The processor provides the process recipe to a substrate treatment apparatus.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: October 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mangesh Bangar, Srinivas D. Nemani, Steve G. Ghanayem, Ellie Y. Yieh
  • Publication number: 20180136569
    Abstract: Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. The processor determines an order of treatment for the substrate based on the overlay error map. The order of treatment includes one or more treatment processes. The processor generates a process recipe for a treatment process of the one or more treatment processes in the order of treatment. The processor provides the process recipe to a substrate treatment apparatus.
    Type: Application
    Filed: November 13, 2017
    Publication date: May 17, 2018
    Inventors: Mangesh BANGAR, Srinivas D. NEMANI, Steve G. GHANAYEM, Ellie Y. YIEH
  • Publication number: 20170194156
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Application
    Filed: March 17, 2017
    Publication date: July 6, 2017
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Patent number: 9601339
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: March 21, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Publication number: 20160104624
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Application
    Filed: December 10, 2015
    Publication date: April 14, 2016
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Patent number: 9230815
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: January 5, 2016
    Assignee: Appled Materials, Inc.
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Publication number: 20140120723
    Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
    Type: Application
    Filed: October 24, 2013
    Publication date: May 1, 2014
    Inventors: Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem
  • Publication number: 20120210937
    Abstract: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput.
    Type: Application
    Filed: April 27, 2012
    Publication date: August 23, 2012
    Applicant: Applied Materials, Inc.
    Inventors: RANDHIR THAKUR, STEVE G. GHANAYEM, JOSEPH YUDOVSKY, AARON WEBB, ADAM ALEXANDER BRAILOVE, NIR MERRY, VINAY K. SHAH, ANDREAS G. HEGEDUS
  • Patent number: 7774887
    Abstract: A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: August 17, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Avi Tepman, Kenneth R. Reynolds, Younes Achkire, Dan A. Marohl, Steve G. Ghanayem, Alexander S. Polyak, Gary Ettinger, Haochuan Zhang, Hui Chen
  • Publication number: 20100173495
    Abstract: Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence.
    Type: Application
    Filed: March 16, 2010
    Publication date: July 8, 2010
    Inventors: Randhir Thakur, Steve G. Ghanayem, Joseph Yudovsky, Aaron Webb, Adam Alexander Brailove, Nir Merry, Vinay K. Shah, Andreas G. Hegedus
  • Patent number: 7601652
    Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
    Type: Grant
    Filed: June 21, 2005
    Date of Patent: October 13, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal K. Singh, Sean M. Seutter, Jacob Smith, R. Suryanarayanan Iyer, Steve G. Ghanayem, Adam Brailove, Robert Shydo, Jeannot Morin
  • Publication number: 20080210258
    Abstract: A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
    Type: Application
    Filed: April 14, 2008
    Publication date: September 4, 2008
    Inventors: Joseph Yudovsky, Avi Tepman, Kenneth R. Reynolds, Younes Achkire, Dan A. Marohl, Steve G. Ghanayem, Alexander S. Polyak, Gary Ettinger, Haochuan Zhang, Hui Chen
  • Patent number: 7377002
    Abstract: A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
    Type: Grant
    Filed: October 28, 2004
    Date of Patent: May 27, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Avi Tepman, Kenneth R. Reynolds, Younes Achkire, Dan A. Marohl, Steve G. Ghanayem, Alexander S. Polyak, Gary Ettinger, Haochuan Zhang, Hui Chen
  • Publication number: 20070259111
    Abstract: The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.
    Type: Application
    Filed: August 11, 2006
    Publication date: November 8, 2007
    Inventors: Kaushal K. Singh, Maitreyee Mahajani, Steve G. Ghanayem, Joseph Yudovsky, Brendan McDougall
  • Patent number: 6638810
    Abstract: The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme.
    Type: Grant
    Filed: November 5, 2001
    Date of Patent: October 28, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Mouloud Bakli, Steve G. Ghanayem, Huyen T. Tran
  • Patent number: 6602770
    Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.
    Type: Grant
    Filed: October 16, 2001
    Date of Patent: August 5, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Sandeep A. Desai, Scott Brad Herner, Steve G. Ghanayem
  • Publication number: 20030008501
    Abstract: The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme.
    Type: Application
    Filed: November 5, 2001
    Publication date: January 9, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Mouloud Bakli, Steve G. Ghanayem, Huyen T. Tran
  • Patent number: 6464795
    Abstract: A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.
    Type: Grant
    Filed: May 3, 2000
    Date of Patent: October 15, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Semyon Sherstinsky, Calvin Augason, Leonel A. Zuniga, Jun Zhao, Talex Sajoto, Leonid Selyutin, Joseph Yudovsky, Maitreyee Mahajani, Steve G. Ghanayem, Tai T. Ngo, Arnold Kholodenko