Patents by Inventor Steve G. Renfro

Steve G. Renfro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device with a sense amplifier
    Patent number: 6172924
    Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).
    Type: Grant
    Filed: February 3, 2000
    Date of Patent: January 9, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Gary R. Gilliam, Steve G. Renfro, Kacey Cutler, Roland Ochoa, Craig E. Schneider
  • Memory device with a sense amplifier
    Patent number: 6058058
    Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).
    Type: Grant
    Filed: August 20, 1998
    Date of Patent: May 2, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Gary R. Gilliam, Steve G. Renfro, Kacey Cutler, Roland Ochoa, Craig E. Schneider
  • Memory device with a sense amplifier
    Patent number: 5940338
    Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).
    Type: Grant
    Filed: August 20, 1998
    Date of Patent: August 17, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Gary R. Gilliam, Steve G. Renfro, Kacey Cutler, Roland Ochoa, Craig E. Schneider
  • Memory device with a sense amplifier
    Patent number: 5901099
    Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuts includes two devices(40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier(14) with a second current level, different from the first current level. The selector (14) is couple to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices(40and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).
    Type: Grant
    Filed: August 22, 1997
    Date of Patent: May 4, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Gary R. Gilliam, Steve G. Renfro, Kacey Cutler, Roland Ochoa, Craig E. Schneider
  • Variable load device responsive to a circuit parameter
    Patent number: 5744978
    Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).
    Type: Grant
    Filed: January 15, 1997
    Date of Patent: April 28, 1998
    Assignee: Micron Technology, Inc.
    Inventors: Gary R. Gilliam, Steve G. Renfro, Kacey Cutler, Roland Ochoa, Craig E. Schneider
  • Memory device with a sense amplifier
    Patent number: 5627785
    Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).
    Type: Grant
    Filed: March 15, 1996
    Date of Patent: May 6, 1997
    Assignee: Micron Technology, Inc.
    Inventors: Gary R. Gilliam, Steve G. Renfro, Kacey Cutler, Roland Ochoa, Craig E. Schneider
  • Low-power fuse detect and latch circuit
    Patent number: 5345110
    Abstract: This invention is a low-power circuit for detecting and latching the state of a fusible link. During a power-up sequence, the circuit makes a one time determination regarding the blown or unblown status of a fuse element. In one embodiment of the invention, the circuit comprises a fuse detect node which is coupled to power supply voltage (V.sub.cc) through a first IGFET and to ground through a second IGFET (which, in this embodiment, has more drive than the first) and the fuse element, respectively, when the fuse element is not severed. In another embodiment of the invention, the fuse detect node is coupled to ground through the second IGFET, and to power supply voltage (V.sub.cc) through the first IGFET (which, in this embodiment, has more drive than the second) and the fuse element, respectively, when the fuse element is not severed.
    Type: Grant
    Filed: April 13, 1993
    Date of Patent: September 6, 1994
    Assignee: Micron Semiconductor, Inc.
    Inventors: Steve G. Renfro, Gary R. Gilliam