Abstract: A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element. The multi-resistive state element is sandwiched between the electrodes such that the top face of the bottom electrode is in contact with the multi-resistive state element's bottom face and the bottom face of the top electrode is in contact with the multi-resistive state element's top face. The bottom electrode, the top electrode and the multi-resistive state element all have sides that are adjacent to their faces. Furthermore, the sides are at least partially covered by a sidewall layer.

Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

Abstract: A memory including a memory element having islands is provided. The memory has address decoding circuitry and an array of memory plugs. The memory plugs include memory element that have island structures of a first material within the bulk of a second material. The island structures are typically nanoparticles. The memory plugs can be placed in a first resistive state at a first write voltage, placed in a second resistive state at a second write voltage, and have its resistive state determined at a read voltage.

Abstract: A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

Abstract: A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom electrode can be described as having a top face with a first surface area, the top electrode has a bottom face with a second surface area and the multi-resistive state element has a bottom face with a third surface area and a top face with a fourth surface area. The multi-resistive state element's bottom face is in contact with the bottom electrode's top face and the multi-resistive state element's top face is in contact with the top electrode's bottom face. Furthermore, the fourth surface area is not equal to the second surface area.

Abstract: Multiple modes of operation in a cross point array. The invention is a cross point array that uses a read voltage across a conductive array line pair during a read mode. The read voltage produces a read current that is indicative of a first program state when the read current is at a first level and indicative of a second program state when the read current is at a second level. The read current is ineffective to produce a change in program state. A first voltage pulse is used during a first write mode if a change from a second program state to a first program state is desired. A second voltage pulse is used during a second write mode if a change from the first program state to the second program state is desired.

Abstract: A method to simplify the polycide gate structure fabrication processes by using a hardmask 240 to define a pattern of siliciding 260 a silicon layer 230, and then using the silicide 260 to mask removal of the unreacted silicon 220 and 230 in locations where the hardmask 240 had been present. The metal silicide 260 formed in the exposed silicon regions 220 and 230 functions as a self-aligned mask against the silicon 220 and 230 etching. By using a selective etching process between the silicon 220 and 230 and the silicide 260, the silicon 220 and 230 can be etched down to the gate oxide 210 to form the polycide (silicide/polysilicon) gate. The polycide gate formed by this method is particularly advantageous in DRAM applications, but can also be used as a MOS gate in a transistor.

Abstract: A method for forming a ultra-shallow junction region (104). A silicon film (single crystalline, polycrystalline or amorphous) is deposited on the substrate (100) to form an elevated S/D (106). A metal film is deposited over the silicon film and reacted with the silicon film to form a silicide film (108). The silicon film is preferably completely consumed by the silicide film formation. An implant is performed to implant the desired dopant either into the metal film prior to silicide formation or into the silicide film after silicide formation. A high temperature anneal is used to drive the dopant out of the silicide film to form the junction regions (104) having a depth in the substrate (100) less than 200 Å. This high temperature anneal may be one of the anneals that are part of the silicide process or it may be an additional process step.

Abstract: A composite dielectric layer (102). A first layer (112) of the composite dielectric layer (102) has a small to no nitrogen concentration. A second layer (114) of the composite dielectric layer (102) has a larger nitrogen concentration (e.g., 5-15%). The composite dielectric layer (102) may be used as a thin gate dielectric wherein the second layer (114) is located adjacent a doped gate electrode (110) and has sufficient nitrogen concentration to stop penetration of dopant from the gate electrode (110) to the channel region (108). The first layer (112) is located between the second layer (114) and the channel region (108). The low nitrogen concentration of the first layer (112) is limited so as to not interfere with carrier mobility in the channel region (108).

Abstract: A CMOS semiconductor structure having insulation sidewall spacers whose width is selected independently for NMOS and PMOS devices. The width of the spacer is selected to reduce hot electron injection in the N channel device and to insure that the gate and source regions are aligned with or underlap the gate in the P channel device. A narrower spacer is used for the P channel device than for the N channel device which permits the formation of a P channel device having a threshold voltage less than 1 volt.