Patents by Inventor Steve Hudgens

Steve Hudgens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programmable resistance memory
    Patent number: 8908413
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 9, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable Resistance Memory
    Publication number: 20110305075
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: August 24, 2011
    Publication date: December 15, 2011
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable resistance memory
    Patent number: 8009455
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: January 20, 2009
    Date of Patent: August 30, 2011
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable resistance memory
    Publication number: 20100182825
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: January 20, 2009
    Publication date: July 22, 2010
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable resistance memory element with indirect heating
    Patent number: 6969869
    Abstract: The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.
    Type: Grant
    Filed: September 5, 2003
    Date of Patent: November 29, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Steve Hudgens, John D. Davis, Thomas J. McIntyre, John C. Rodgers, Keith K. Sturcken
  • Programmable resistance memory element with indirect heating
    Publication number: 20040140523
    Abstract: The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.
    Type: Application
    Filed: September 5, 2003
    Publication date: July 22, 2004
    Inventors: Steve Hudgens, John D. Davis, Thomas J. Mclntyre, John C. Rodgers, Keith K. Sturcken