Abstract: A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow.

Abstract: A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow.

Abstract: A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow.

Abstract: The invention relates to a system for manufacturing semiconductor devices from silicon semiconductor wafers, comprising forming device operable forming a silicon semiconductor wafer, oxidizing device operable for forming an oxidation gate on the silicon semiconductor wafer and thereafter, a testing arrangement for testing the silicon semiconductor wafer for contaminants using a test drop; wherein the improvement comprises, rotating device operable for receiving the wafer and for rotating in one direction and the opposite direction at predetermined rates in response to first electrical signals; carrier device operable for being positioned on the silicon semiconductor wafer and for retaining at least a portion of the test drop in contact with the wafer during relative movements of the carrier device over the surface of the wafer while substantially eliminating direct contact between the carrier device and the wafer; radial moving device operable for moving the carrier device along a predetermined radial path re

Abstract: The invention relates to a system for removing an organic compound capable of forming a negative azeotrope mixture with water from a vapor stream using condensation, comprising a conducting system for providing a path for communicating the vapor stream into a condensation region; first sensing apparatus positioned in the path and operable for detecting and for evaluating the mass rate flow of the organic compound in the vapor stream flowing towards the condensation region; a second sensing apparatus positioned in the path operable for sensing the temperature in the condensation region; first supplying apparatus operable for supplying water in the form of a mist or vapor into the vapor stream; second supplying apparatus operable for supplying a hydrophobic agent into the vapor stream; third supplying apparatus operable for supplying air at a predetermined temperature into the vapor stream so that the temperature of the vapor stream is at a temperature at least above the lowest boiling point of the mixture of t

Abstract: A quadrupole sputtering system having four electrodes comprised of a cathode, an anode, a cathode/anode shield and an electrically floating target shield circumscribing the source target of the cathode.

Abstract: A method for cleaning uneven substrate surfaces having channels, via holes or stepped surface topography. In accordance with the method, an electron beam device which generates a solid angle source of ions is provided. A substrate having an uneven surface topography is oriented in the path of the solid angle source of ion at a particular angle with reference to the center line of the ion beam source. While in the particular orientation with respect to the center line, the substrate is rotated about an axis normal to the plane of the substrate surface.

Abstract: Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.